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IEEE Journal of Quantum Electronics

Issue 9 • September 1986

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Displaying Results 1 - 25 of 45
  • [Front cover and table of contents]

    Publication Year: 1986, Page(s): 0
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  • Editorial announcement

    Publication Year: 1986, Page(s): 1546
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  • Introduction to the special issue on physics and applications of semiconductor quantum-well structures

    Publication Year: 1986, Page(s):1609 - 1610
    Cited by:  Papers (1)
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  • Physics and applications of GexSi1-x/Si strained-layer heterostructures

    Publication Year: 1986, Page(s):1696 - 1710
    Cited by:  Papers (559)  |  Patents (21)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4836 KB)

    This paper reviews recent advances in our current level of understanding of the physics underlying transport and optical properties of GexSi1-x/Si strained-layer heterostructures. Included are discussions of critical (maximum) layer thicknesses, effects of coherency strain on the bandgaps of both Si and GexSi1-xand the influence of layer strains on the b... View full abstract»

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  • Phonons in semiconductor superlattices

    Publication Year: 1986, Page(s):1760 - 1770
    Cited by:  Papers (294)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3804 KB)

    Experimental results on phonons in semiconductor super-lattices are almost all from Raman scattering measurements. The superlattice system most studied is GaAs-Ga1-xAlxAs, and in the best-understood geometry the phonons are longitudinal modes with wave vectors perpendicular to the (001) interface planes. A linear-chain model then gives a good understanding of the results, whi... View full abstract»

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  • Handbook of stochastic methods for physics, chemistry and the natural sciences

    Publication Year: 1986, Page(s): 1922
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (201 KB)

    First Page of the Article
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  • [Back cover]

    Publication Year: 1986, Page(s): 0
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    Freely Available from IEEE
  • Hot carriers in quasi-2-D polar semiconductors

    Publication Year: 1986, Page(s):1728 - 1743
    Cited by:  Papers (170)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (5592 KB)

    This paper reviews hot carrier effects in quasi-2-D polar semiconductors (quantum wells and heterostructures), with special emphasis on the GaAs/AlGaAs system. After briefly introducing the basic concepts in hot carrier physics, we discuss theoretical calculations of carrier-phonon interactions and hot carrier energy loss rates to the lattice in quasi-2-D systems. We then discuss how these quantit... View full abstract»

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  • Dynamics of extreme nonequilibrium electron transport in GaAs

    Publication Year: 1986, Page(s):1744 - 1752
    Cited by:  Papers (63)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3000 KB)

    Hot electron effects have been observed in semiconductors for many decades; however, until recently, direct experimentally determined spectroscopic information on the hot electron distribution function did not exist. As a result the microscopic basis for hot electron transport could only be inferred. To bridge the gap between theory and experiment we invented hot electron spectroscopy, a technique... View full abstract»

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  • A bird's-eye view on the evolution of semiconductor superlattices and quantum wells

    Publication Year: 1986, Page(s):1611 - 1624
    Cited by:  Papers (310)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (5288 KB)

    Following the past seventeen-year developmental path in the research of semiconductor superlattices and quantum wells, significant milestones are presented with emphasis on experimental investigations in the device physics of reduced dimensionality performed in cooperation with the materials science of heteroepitaxial growth. View full abstract»

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  • Valence band mixing and optical emission in modulation-doped GaAs-(AlGa)As heterostructures

    Publication Year: 1986, Page(s):1645 - 1648
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1368 KB)

    Unexpected optical emission spectra from electrons confined in GaAs quantum layers reveal a strong component with polarization normal to the plane of the layers. For elementary electron-hole recombination processes, this suggests surprisingly large band mixing in the ground valence subband. Effective mass theories that include conventional symmetry breaking mechanisms do not satisfactorily account... View full abstract»

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  • Thin film-coated waveguide CO2laser

    Publication Year: 1986, Page(s):1604 - 1608
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1672 KB)

    A new type of radio frequency (RF) excited waveguide laser with a rectangular cross section is proposed which is composed of two dielectric or lossy materials and two metallic electrodes which are coated by a thin film with small absorptions. Theoretical and experimental analyses show that the maximum output powers of the new waveguide laser are much larger than those of conventional ones. View full abstract»

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  • Temperature dependence of bistable InGaAsP/InP lasers

    Publication Year: 1986, Page(s):1579 - 1586
    Cited by:  Papers (17)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2688 KB)

    An increase of hysteresis current width in bistable lasers with two or three sections was observed at higher temperatures. A rate equation analysis was performed where both carrier density dependence on lifetime and the bleaching of saturable absorption by the spontaneous emission were taken into account. We show that the increased loss of injected carriers due to Auger recombination process cause... View full abstract»

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  • Gain and the threshold of three-dimensional quantum-box lasers

    Publication Year: 1986, Page(s):1915 - 1921
    Cited by:  Papers (732)  |  Patents (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2192 KB)

    Gain and threshold current density are analyzed for quantum-box lasers where electrons are confined in quantum well three-dimensionally, based on the density-matrix theory of semiconductor lasers with relaxation broadening. The electronic dipole moment and its polarization dependence are first analyzed, and it is shown that the gain becomes maximum when the electric field of light is parallel to t... View full abstract»

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  • Role of spontaneous emission in the dynamics of mode locking by synchronous pumping

    Publication Year: 1986, Page(s):1593 - 1599
    Cited by:  Papers (56)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2664 KB)

    Numerical simulations tracing the pulse evolution in the case of mode locking by synchronous pumping are presented. It is argued that strictly steady-state pulses are impossible in principle because the wings of the pulses are embedded in background radiation generated by spontaneous emission. The simulations demonstrate that the perturbations introduced by the stochastic background can be severe,... View full abstract»

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  • Electronic states in semiconductor heterostructures

    Publication Year: 1986, Page(s):1625 - 1644
    Cited by:  Papers (403)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (6232 KB)

    This paper describes the electronic energy levels of semiconductor heterostructures within the envelope function scheme. Quantum well and superlattice electronic states are calculated and discussed, especially the in-plane dispersion relations. The Coulombic bound states in heterostructures (impurities, excitons) are then discussed. Finally, we present a brief overview of the effect of a static el... View full abstract»

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  • Growth and properties of HgTe-CdTe and other Hg-based superlattices

    Publication Year: 1986, Page(s):1656 - 1665
    Cited by:  Papers (55)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3288 KB)

    This review paper reports on growth by molecular beam epitaxy and characterization of HgTe-CdTe. Hg1-xCdxTe-CdTe, and HgTe-ZnTe superlattice systems. View full abstract»

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  • Quantum well lasers--Gain, spectra, dynamics

    Publication Year: 1986, Page(s):1887 - 1899
    Cited by:  Papers (371)  |  Patents (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4352 KB)

    We discuss a number of theoretical and experimental issues in quantum well lasers with emphasis on the basic behavior of the gain, the field spectrum, and the modulation dynamics. It is revealed that the use of quantum well structures results in improvement of these properties and brings several new concepts to optical semiconductor devices. View full abstract»

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  • Electric-field dependence of linear optical properties in quantum well structures: Waveguide electroabsorption and sum rules

    Publication Year: 1986, Page(s):1816 - 1830
    Cited by:  Papers (228)  |  Patents (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (5456 KB)

    We summarize the electric-field dependence of absorption and luminescence in quantum wells for fields perpendicular to the layers, present extended discussion of electroabsorption spectra and devices in waveguide samples, and derive sum rules for electroabsorption. Optical bistability, self-linearized modulation, and optical level shifting are demonstrated in self-electrooptic effect device config... View full abstract»

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  • Beam radiation from tapered waveguides

    Publication Year: 1986, Page(s):1551 - 1556
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1832 KB)

    Beam radiation from tapered waveguides is studied theoretically using the intrinsic mode approach. The field distribution across the beam, beam width, and angle made by the beam with interface to the tapered waveguide substrate, important parameters in coupling devices, are studied. Finally, some of our theoretical results are compared to measurements made on optical coupling devices. View full abstract»

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  • Zero-dimensional "excitons" in semiconductor clusters

    Publication Year: 1986, Page(s):1909 - 1914
    Cited by:  Papers (370)  |  Patents (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1864 KB)

    Semiconductor crystallites of characteristic dimension \sim20-100 Å can be made by precipitation in liquids and dielectrics. These crystallites have bulk-like internal lattices. The optical spectra show partially resolved discrete features that result from carrier spatial confinement in three dimensions. Spectral shifts of more than 1 eV are observed. Th... View full abstract»

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  • Physical limits of heterostructure field-effect transitors and possibilities of novel quantum field-effect devices

    Publication Year: 1986, Page(s):1845 - 1852
    Cited by:  Papers (27)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2768 KB)

    Physical processes which govern the switching speed of heterostructure field-effect transistors, including high-electron mobility transistors, are discussed to show that the ultimate switching speed is of the order of one ps. The importance of adopting new FET structures with higher current-drive capability is pointed out, including selectively-doped double-hetero structures and material systems o... View full abstract»

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  • Analysis of novel resonant electron transfer triode device using metal-insulator superlattice for high speed response

    Publication Year: 1986, Page(s):1880 - 1886
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2264 KB)

    A novel resonant electron transfer triode (RETT), which uses electron resonant tunneling utilizing a metal insulator multilayer superlattice as an artificial semiconductor, is proposed and its basic properties are estimated theoretically. Possibility for high speed response in room temperature, such as response time \tau = 0.25-0.38 ps, cutoff frequency View full abstract»

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  • Ultra-high-speed modulation of 1.3-µm InGaAsP diode lasers

    Publication Year: 1986, Page(s):1568 - 1578
    Cited by:  Papers (60)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3600 KB)

    The differential gain of 1.3 μm InGaAsP lasers is found to be a strong function of the active layer doping level. Using devices with doping enhanced differential gain and short cavity lengths, a modulation bandwidth of 15 GHz is achieved. The parasitic shunt capacitance which often severely limits the modulation bandwidth of diode lasers is greatly reduced by using a 0.4 μm thick oxide i... View full abstract»

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  • Recent advances inultra-high-speed HEMT technology

    Publication Year: 1986, Page(s):1870 - 1879
    Cited by:  Papers (21)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3336 KB)

    Current status and recent advances in high electron mobility transistor (HEMT) technology for high-performance VLSI are presented with a focus on material, self-alignment device fabrication, and HEMT LSI implementations. HEMT is a very promising device for ultra-high-speed LSI/VLSI due to the supermobility GaAs/AlGaAs heterojunction structure. The technological challenges for large-scale integrati... View full abstract»

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Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics..

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Aaron R. Hawkins
Brigham Young University