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Electron Device Letters, IEEE

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Electron Device Letters, IEEE

Issue 10 • Date Oct. 1990

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Uniform, high-gain AlGaAs/In/sub 0.05/Ga/sub 0.95/As/GaAs P-n-p heterojunction bipolar transistors by dual selective etch process

Negative differential resistance of a delta-doping-induced double-barrier quantum-well diode at room temperature

Velocity saturation in the collector of Si/Ge/sub x/Si/sub 1-x//Si HBT's

The reduction of backgating in GaAs MESFETs by impact ionization

Impact ionization rates in

High efficiency and output power from second- and third-harmonic millimeter-wave InP-TED oscillators at frequencies above 170 GHz

Integration of InGaAsP/InP optoelectronic bistable switches with a function of optical erasing

A fundamental limitation for bipolar transistor scaling

Improvement of aluminum-Si contact performance in native-oxide-free processing

Negative resistance element for a static memory cell based on enhanced surface generation (MOS devices)

A ferroelectric DRAM cell for high-density NVRAMs

InGaAs/InAlAs/InP collector-up microwave heterojunction bipolar transistors

Impact of snapback-induced hole injection on gate oxide reliability of N-MOSFETs

AlGaAs/GaAs P-n-p HBTs with high maximum frequency of oscillation

Experimental characterization and modeling of electron saturation velocity in MOSFETs inversion layer from 90 to 350 K

Novel properties of a 0.1- mu m-long split-gate MODFET

Reconciliation of a hot-electron distribution function with the lucky electron-exponential model in silicon

50-GHz self-aligned silicon bipolar transistors with ion-implanted base profiles

Schottky diodes of Au on GaAs/sub 1-x/Sb/sub x//GaAs n-N heterostructures grown by MBE

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