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Quantum Electronics, IEEE Journal of

Issue 6 • Date June 1976

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Displaying Results 1 - 14 of 14
  • [Front cover and table of contents]

    Publication Year: 1976 , Page(s): 0
    Save to Project icon | Request Permissions | PDF file iconPDF (140 KB)  
    Freely Available from IEEE
  • Editorial: Integrated optics

    Publication Year: 1976 , Page(s): 321
    Save to Project icon | Request Permissions | PDF file iconPDF (134 KB)  
    Freely Available from IEEE
  • Sustainer enhancement of the VUV fluorescence in high-pressure xenon

    Publication Year: 1976 , Page(s): 353 - 359
    Cited by:  Papers (1)  |  Patents (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (728 KB)  

    A low-energy (20-60 kV), high-repetition-rate (∼60-Hz) electron-beam system is used to excite xenon at pressures up to 600 psi. The salient features of the temporal and spatial measurements of the VUV fluorescence, corresponding to the1Σg+-3,1 \Sigma _{u}+ transitions in xenon, are presented. Experimentally, it is found that in a regime where more than 20 percent of the electron-beam energy incident on the gas is converted to VUV fluorescence, the maximum incremental efficiency due to the addition of a sustainer discharge is about 7 percent. A kinetic model is described which attributes the low sustainer efficiencies to electron interactions with the excited state populations. View full abstract»

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  • Characteristics of RF injection locking of self-pulsing in an AlGaAs DH junction laser

    Publication Year: 1976 , Page(s): 368 - 371
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (389 KB)  

    The minimum RF power required for injection locking of the light pulsations in the output of a CW room-temperature AlGaAs double-heterostructure (DH) junction laser was found to depend exponentially on ( f-f_{r} ), where f is the RF injection frequency and fris the self-pulsing frequency, and also, to depend inversely on the self-pulsing strength of the laser. Nearly 100-percent modulation depth is achievable at f=f_{r} , and slight reduction of modulation depth occurs when f \gg f_{r} . View full abstract»

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  • Additional ultraviolet laser transitions in Cu II

    Publication Year: 1976 , Page(s): 371 - 372
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (259 KB)  

    We have observed three additional ultraviolet laser transitions in Cu II at 2529, 2600, and 2707 Å. To our knowledge, this is the first time these lines have been observed to oscillate. View full abstract»

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  • Correction to "Surface-wave radiation loss from curved dielectric slabs and fibers"

    Publication Year: 1976 , Page(s): 371
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (104 KB)  

    First Page of the Article
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  • [Back cover]

    Publication Year: 1976 , Page(s): 0
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    Freely Available from IEEE
  • Nonlinear optical susceptibility of HgGa2S4

    Publication Year: 1976 , Page(s): 367 - 368
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (264 KB)  

    The second harmonic coefficient d36of HgGa2S4has been measured to be 5 times larger than d36(LiNbO3). The birefringence is usefully large. View full abstract»

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  • Very high radiance edge-emitting LED

    Publication Year: 1976 , Page(s): 360 - 364
    Cited by:  Papers (15)  |  Patents (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (464 KB)  

    In this paper we describe a new light-emitting diode (LED) whose radiance is 1000 W/cm2sr, an order of magnitude higher than any previous LED. The LED is an (AlGa)As double-heterojunction edge-emitting structure. This structure acts as a waveguide for the internally generated light, and with appropriate Al concentration difference at the heterojunctions ( \Delta x \approx 0.3 ) and active region width (∼500Å), the radiation pattern perpendicular to the junction can be less than 30° (FWHM). For fiber-optic communications this LED is capable of coupling 850 μw, at a coupling loss of only -10 dB into a 0.14-numerical-aperture (NA), 90-μm-diam low-loss fiber. The LED is capable of being directly modulated at 250 MHz and has a spectral width of less than 300 Å. View full abstract»

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  • Propagation of waves in optical waveguides with various dielectric and metallic claddings

    Publication Year: 1976 , Page(s): 365 - 367
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (304 KB)  

    A new graphic method of obtaining easily the phase constant for a propagating wave is described and illustrated by a number of solutions for an optical waveguide covered with various dielectric and metallic claddings. It contains, implicitly, solutions for surface waves. View full abstract»

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  • Trapped radiation in injection lasers

    Publication Year: 1976 , Page(s): 322 - 326
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (592 KB)  

    The effect of trapped radiation on the stimulated emission threshold and power in injection lasers is investigated theoretically and experimentally. The density of trapped radiation is determined by the relation between the gain and the loss coefficients for this radiation in the active region. The last value depends upon treatment of the cavity sidewalls and laser diode geometry. The absorption of spontaneous emission in the active diode region provides for an additional optical excitation of the crystal and can result in a decrease of threshold current. The GaAs laser diodes with Fabry-Perot cavities and four-ended resonators were studied. The lasing threshold for the axial modes is increased with the diode width and that for the nonaxial radiating modes is decreased with it. The luminescence spectra from the cavity ends and sidewalls are investigated as a function of diode length and current density. It is shown that the gained luminescence can be an essential source of energy losses in injection lasers and leads to limitations of dimensions of laser diodes with planar p-n-junctions. Various methods for suppression of harmful radiation and for increase of the stimulated emission power in injection lasers are discussed. View full abstract»

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  • Increased tuning range of Pb1-xSnxSe diode lasers using small magnetic fields

    Publication Year: 1976 , Page(s): 326 - 330
    Cited by:  Papers (1)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (536 KB)  

    A Pb0.96Sn0.04Se laser diode emitting in the 815-835- cm-1region with current tuning has been examined with applied magnetic fields at 7 kG and below. With increasing magnetic field the laser gain curve broadens, allowing more laser cavity modes (separated by 1.8 cm-1) to oscillate at a given current, and yielding a larger tuning range with current for each cavity mode. Using a combination of current tuning and a constant magnetic field, laser emission was achieved from 800 to 850 cm-1with 90 percent coverage of the spectral interval. View full abstract»

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  • The effect of linewidth on the efficiency of two-photon-pumped frequency converters

    Publication Year: 1976 , Page(s): 330 - 333
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (408 KB)  

    The efficiency of two-photon-pumped frequency converters as a function of the pump laser detuning and linewidth, and of the linewidth of the selected nonallowed atomic transition is studied. We show that pressure broadening of the atomic transition is a key parameter in the design of these converters. A technique is developed to measure this linewidth as a function of either self- or foreign-gas broadening using a broad-band pump laser. Measurements of the linewidth of the 3s^{2}S-3d^{2}D transition of Na, and its device implications, are presented. View full abstract»

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  • Output mode spectra, comparative parametric operation, quenching, photolytic reversibility, and short-pulse generation in atomic iodine photodissociation lasers

    Publication Year: 1976 , Page(s): 334 - 352
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (2232 KB)  

    The advantages and disadvantages of the atomic iodine photodissociation laser for high-energy operation have been considered. Laser excitation by both slow and fast flashlamps has been investigated; in slow flash excitation, self-mode-locking occurs frequently and the output-mode characteristics of the laser operated in this way have been studied. The comparative performance of different parent materials for photodissociation has been investigated in the fast flash mode of excitation. This mode of excitation gives higher energy laser output and efficiency and less pyrolysis of the parent material. These observations, and the photolytic reversibility characteristics of different materials in repetitively photolyzed operation, have been discussed in the light of the most recently available kinetic data; i-C3F7I is the material of choice for laser operation. Finally, limits to the ability of atomic iodine photodissociation laser/amplifier(s) systems to generate and amplify short duration, high-energy pulses set by intralevel relaxation effects and coherent interactions are discussed. View full abstract»

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Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics..

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Aaron R. Hawkins
Brigham Young University