IEEE Journal of Quantum Electronics

Issue 7 • July 1974

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Displaying Results 1 - 12 of 12
  • [Front cover and table of contents]

    Publication Year: 1974, Page(s): 0
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    Freely Available from IEEE
  • Molecular saturation and the criterion for passive Q switching

    Publication Year: 1974, Page(s):533 - 540
    Cited by:  Papers (16)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (929 KB)

    Rotational hole burning is known to be the main factor that determines saturation in molecular absorbers during a short pulse. Experimental results are presented that suggest that pulse transmission measurements, as opposed to CW transmission measurements, must be used in order to determine if a gas can be used as a saturable absorber in passiveQswitching. Rate equations are developed f... View full abstract»

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  • Silver thiogallate (AgGaS2) - Part 1: Nonlinear optical properties

    Publication Year: 1974, Page(s):540 - 545
    Cited by:  Papers (20)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (884 KB)

    The first part of a collaborative survey of the linear and nonlinear optical properties of silver thiogallate, carried out by the Centre National d'Etudes des Télécommunications (Bagneux) and the Department of Electronics of the University of Southampton, is presented. A detailed study of second-harmonic generation (SHG) in silver thiogallate is presented. Careful experiments in the near... View full abstract»

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  • Silver thiogallate (AgGaS2) - Part II: Linear optical properties

    Publication Year: 1974, Page(s):546 - 550
    Cited by:  Papers (34)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (558 KB)

    New measurements are presented on the absorption of silver thiogallate and related to fundamental mechanisms. All available data on the refractive indices of silver thiogallate, including new results for the visible, have been incorporated into sets of Sellmeier expressions. Different Sellmeier constants are given for visible and infrared wavelengths and also for crystals from different sources. C... View full abstract»

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  • Analysis of heterojunction optical waveguides with a modulated region smaller than the guide width

    Publication Year: 1974, Page(s):551 - 556
    Cited by:  Papers (2)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (660 KB)

    Heterojunction optical waveguide modulators in which the modulated region may be smaller than the guide width are analyzed using two models: the average-field model, which replaces the actual junction field with a uniform field and the abrupt-junction model, which accounts for the linear decrease of the electric field throughout the depletion region. The models are used to calculate the field-indu... View full abstract»

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  • Emission cross section and fluorescence efficiency of Nd-pentaphosphate

    Publication Year: 1974, Page(s):563 - 567
    Cited by:  Papers (42)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (518 KB)

    The room-temperature cross sections for the Nd3+4F_{3/2}levels to the4I_{11/2}and4I_{9/2}manifolds (lower laser state and ground state, respectively) in NdP5O14are measured by two spectroscopic methods. A value for the largest cross section ofsigma(R_{1} - Y_{2}) = 1.7 times 10^{-19}cm View full abstract»

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  • Correction to "Laser-induced surface damage of transparent dielectrics"

    Publication Year: 1974, Page(s): 573
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    First Page of the Article
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  • [Back cover]

    Publication Year: 1974, Page(s): 0
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    Freely Available from IEEE
  • Subnanosecond rise time pulses from injection lasers

    Publication Year: 1974, Page(s):570 - 572
    Cited by:  Papers (13)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (384 KB)

    The hybrid integration of an injection laser with a simple avalanche transistor modulator is shown to produce optical peak powers of several tens of watts magnitude and pulse rise times appreciably shorter than 1 ns. In certain circumstances the pulse leading edge assumes the form of a spike having a displayed rise time of 120 ps. View full abstract»

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  • Extinction ratios of GaAs and CdTe electrooptical modulators

    Publication Year: 1974, Page(s):572 - 573
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (264 KB)

    Comparative extinction-ratio measurements for two electrooptical materials, GaAs and CdTe, are reported. The extinction ratio obtainable in the two materials is found to be similar, with the best samples approaching 104:1. View full abstract»

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  • The GaAs P-N-P-N laser diode

    Publication Year: 1974, Page(s):567 - 569
    Cited by:  Papers (8)  |  Patents (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (344 KB)

    The general structure of double-heterojunction diode lasers is shown to be consistent with the required geometry of the Shockley diode or p-n-p-n switch. When the two devices are combined in a single structure, there results an extremely simple source of high optical power (>0.5-W) pulses of very short duration (<10 ns) without the need for a complex external driver. In principle, pulse trig... View full abstract»

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  • Field-realigned nematic-liquid-crystal optical waveguides

    Publication Year: 1974, Page(s):556 - 562
    Cited by:  Papers (8)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (664 KB)

    An external electric field exerts volume torque on the nematic liquid crystal due to the anisotropic molecular polarizability and tends to reorient the molecular axes. Phase-velocity tuning in these materials is thus possible. Eigenmodes of thin-film liquid-crystal waveguides are analyzed by a numerical method. A three-layer model of the waveguides is found to be in good agreement with the measure... View full abstract»

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Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Prof. Hon Ki Tsang
Chinese University of Hong Kong