IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Issue 11 • Nov 1990

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Displaying Results 1 - 12 of 12
  • Representing large cell maps

    Publication Year: 1990, Page(s):1238 - 1241
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (308 KB)

    The author proposes a data structure for the cell map in order to eliminate excess page faults present in the traditional 2-D array structure. Experiments have shown that this representation can effectively eliminate 90% of the page faults. Thus, the performance of routing algorithms can be greatly improved. The proposed structure is very general. The majority of layout algorithms (if not all) bas... View full abstract»

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  • The Monte Carlo method for semiconductor device and process modeling

    Publication Year: 1990, Page(s):1164 - 1176
    Cited by:  Papers (10)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1232 KB)

    A critical review of the Monte Carlo (MC) simulation as applied to semiconductor device and process modeling is presented. The general method is discussed, and some special features that can be very useful in particular situations are examined. It is shown that the MC method is a mature technique for modeling and can offer great advantages over more traditional approaches. Critical points are poin... View full abstract»

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  • Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling

    Publication Year: 1990, Page(s):1141 - 1149
    Cited by:  Papers (226)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (764 KB)

    A treatment of the self-heating problem is presented. It is based on the laws of phenomenological irreversible thermodynamics (e.g. Onsager's relations and conservation of total energy) and is also consistent with the physical models usually considered in the isothermal drift diffusion approximation. The classical isothermal device equations are extended and completed by a generalized heat-conduct... View full abstract»

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  • Numerical treatment of nonrectangular field-oxide for 3-D MOSFET simulation

    Publication Year: 1990, Page(s):1189 - 1197
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (652 KB)

    A simulation method that takes into account effects at the channel edge due to nonplanar interfaces is introduced. The authors applied the box integration method after Forsythe (1960) for discretization. The most important nonplanar interface occurs at the transition of the gate oxide to the field oxide, which is commonly called bird's beak. Approximating this interface with right angles leads to ... View full abstract»

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  • Fourier method modeling of semiconductor devices

    Publication Year: 1990, Page(s):1225 - 1237
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (940 KB)

    A high-order approach to a numerical modeling of semiconductor devices is presented. The method combines the classical Fourier-series Galerkin procedure, a special matrix calculus, and fast numerical pseudospectral techniques. The proposed algorithm renders the exact solution (machine precision) of the semiconductor equations in the closed form of a trigonometric polynomial. The condition number o... View full abstract»

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  • Process modeling and simulation: boundary conditions for point defect-based impurity diffusion model

    Publication Year: 1990, Page(s):1177 - 1183
    Cited by:  Papers (5)  |  Patents (27)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (644 KB)

    A generalized boundary condition for self-interstitial diffusion in silicon is proposed by assuming interstitial flux continuity across the interface. In the case of thermal oxidation, the majority of generated interstitials at the interface flows into the oxide, while only a small fraction of the interstitials diffuse into bulk silicon causing oxidation-induced anomalous diffusion of dopants. The... View full abstract»

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  • 2-D simulation of degenerate hot electron transport in MODFETs including DX center trapping

    Publication Year: 1990, Page(s):1150 - 1163
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1244 KB)

    A comprehensive 2-D hydrodynamic energy model which is capable of describing nonstationary electron dynamics and nonisothermal transport within submicrometer MODFETs (TEGFETs or HEMTs) is presented. The model accounts for carrier degeneracy, deep DX center levels, and conduction outside the quantum well, thereby including bulk and parasitic MESFET effects. A technique for handling carrier degenera... View full abstract»

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  • Review of physical models for numerical simulation of semiconductor microsensors

    Publication Year: 1990, Page(s):1198 - 1208
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1060 KB)

    With the increasing need for microsensors, development of simulation tools (based on adequate physical models to facilitate microsensor analysis and design) is a crucial task. The authors review the variety of physical approximations, model equations, and boundary conditions along with an outline of pertinent numerical procedures used in the numerical simulation of semiconductor microsensors. In p... View full abstract»

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  • Three-dimensional nonequilibrium interface conditions for electron transport at band edge discontinuities

    Publication Year: 1990, Page(s):1136 - 1140
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (364 KB)

    The author addresses the problem of boundary conditions for electron transport at interfaces of different material species from a fundamental microscopic point of view in order to derive self-consistent boundary conditions for various transport models and to help select a suitable model for the consideration of interface effects. A three-dimensional nonequilibrium interface condition for the Boltz... View full abstract»

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  • SITAR-an efficient 3-D simulator for optimization of nonplanar trench structures

    Publication Year: 1990, Page(s):1184 - 1188
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (388 KB)

    A 3-D device simulator which allows the investigation of the electrical behavior of nonplanar trench-type device structures is presented. It has been used to analyze leakage due to punchthrough between neighboring trench capacitors, depending on geometry and doping profiles. Using an analytical model to estimate the leakage current and a completely vectorized solution algorithm for all three semic... View full abstract»

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  • Technology CAD for competitive products

    Publication Year: 1990, Page(s):1209 - 1216
    Cited by:  Papers (19)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (788 KB)

    Recent trends in the integration of process-, device-, and circuit-modeling tools and the current rapid emergence of Unix-based computing environments of networked workstations and computer engines makes possible user-friendly, task-based CAD systems for technology optimization, characterization, and cell design. The authors discuss these trends and identify opportunities to use technology CAD too... View full abstract»

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  • A nonequilibrium one-dimensional quantum-mechanical simulation for AlGaAs/GaAs HEMT structures

    Publication Year: 1990, Page(s):1217 - 1224
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (636 KB)

    An accurate method of simulating nonequilibrium gate current and sheet-carrier concentration in AlGaAs/GaAs HEMT structures is reported. The calculation is based upon self-consistent solving of Schrodinger's equation, Poisson's equation and continuity equations. A concept for three-dimensional electrons accompanied by two-dimensional electrons in a quantum well at a heterointerface makes it possib... View full abstract»

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Aims & Scope

The purpose of this Transactions is to publish papers of interest to individuals in the area of computer-aided design of integrated circuits and systems composed of analog, digital, mixed-signal, optical, or microwave components.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

VIJAYKRISHNAN NARAYANAN
Pennsylvania State University
Dept. of Computer Science. and Engineering
354D IST Building
University Park, PA 16802, USA
vijay@cse.psu.edu