Solid-State Circuits, IEEE Journal of
Issue 4 • Date Aug. 1980
Society Sponsor
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Displaying Results 1 - 25 of 62
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[Inside front cover - August 1980]
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PDF (152 KB)
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Table of contents (August 1980)
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PDF (220 KB)
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Editor's Note (August 1980)
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PDF (51 KB)
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Foreword [to the Special Issue]
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PDF (367 KB)
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Quadruply Self-Aligned MOS (QSA MOS) - A New Short-Channel High-Speed High-Density MOSFET for VLSI
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PDF (1181 KB)
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A 1-/spl mu/m Bipolar VLSI Technology
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PDF (1362 KB)
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Subnanosecond Self-Aligned I/sup 2/L/MTL Circuits
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PDF (1076 KB)
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Application of MoSi/sub 2/ to the Double-Level Interconnections of I/sup 2/L Circuits
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PDF (838 KB)
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Refractory Silicides of Titanium and Tantalum for Low-Resistivity Gates and Interconnects
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PDF (1714 KB)
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A General Etching Simulator for VLSI Lithography and Etching Processes: Part II - Application to Deposition and Etching
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PDF (745 KB)
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Computer Analysis of a Short-Channel BC MOSFET
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PDF (1194 KB)
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A Two-Dimensional Computer Analysis of Triode-Like Characteristics of Short-Channel MOSFET's
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PDF (1128 KB)
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An Mo Gate 4K Static MOS RAM
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PDF (910 KB)
Aims & Scope
The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits.
Meet Our Editors
Editor-in-Chief
Un-Ku Moon
Oregon State University, EECS
