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Solid-State Circuits, IEEE Journal of

Issue 6 • Date Dec. 1973

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Displaying Results 1 - 21 of 21
  • [Front cover - December 1973]

    Publication Year: 1973 , Page(s): f1
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    Freely Available from IEEE
  • [Inside front cover - December 1973]

    Publication Year: 1973 , Page(s): f2
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    Freely Available from IEEE
  • 1973 Index IEEE Journal of Solid-State Circuits Vol. SC-8

    Publication Year: 1973 , Page(s): i1 - i7
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    Freely Available from IEEE
  • Foreword (December 1973)

    Publication Year: 1973 , Page(s): 395
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    Freely Available from IEEE
  • A monolithic 10-b digital-to-analog converter using ion implantation

    Publication Year: 1973 , Page(s): 396 - 403
    Cited by:  Papers (13)  |  Patents (5)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (973 KB)  

    The design and fabrication of a self-contained 10-b monolithic digital-to-analog converter is described. To overcome the limitations of standard bipolar processing and to achieve a circuit with reasonably low process sensitivities, a new process incorporating ion implantation is used. The circuit has been designed in a manner to fully utilize the characteristics of this process with the objective ... View full abstract»

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  • A complete monolithic 10-b D/A converter

    Publication Year: 1973 , Page(s): 404 - 408
    Cited by:  Papers (3)  |  Patents (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (683 KB)  

    A monolithic 10-b plus sign D/A converter has been developed that incorporates all necessary circuit functions including voltage reference and internally compensated high-speed output op amp in a single 82/spl times/148 mil chip. A unique logic switch and current source configuration achieves 0.05 percent nonlinearity with /spl plusmn/10 V compliance current output option as well as true or comple... View full abstract»

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  • A wide-band high-voltage monolithic amplifier

    Publication Year: 1973 , Page(s): 408 - 413
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1054 KB)  

    A monolithic amplifier capable of 80-V swing and 1.7-V/NS slew rate has been fabricated using standard integrated circuit techniques. The amplifier is intended for capacitive loads such as in electrostatic deflection applications. The totem-pole technique is combined with active feedback to produce this large voltage swing without excessive power consumption. A new output circuit linked with a flo... View full abstract»

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  • A monolithic silicon wide-band amplifier from DC to 1 GHz

    Publication Year: 1973 , Page(s): 414 - 419
    Cited by:  Papers (10)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1327 KB)  

    Monolithic integration of a wide-band amplifier with uniform gain from dc to 1 GHz is described. By choosing an essentially simple circuit both for construction and evaluation it is shown that the collective application of microwave transistor diffusions, double layer interconnections, beam leads, air isolation, and microstriplines on ceramic substrates extends the range of operation to beyond 1 G... View full abstract»

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  • Monolithic integration for a camera control system

    Publication Year: 1973 , Page(s): 427 - 434
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1314 KB)  

    Outlines the integrated circuit designs used within the first- generation version of an electronic subsystem developed specifically for the Polaroid SX-70 automatic camera. In particular, interactions between selected packaging technologies, performance requirements, cost effectiveness, and circuit design are examined. View full abstract»

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  • A two-quadrant analog multiplier integrated circuit

    Publication Year: 1973 , Page(s): 434 - 439
    Cited by:  Papers (1)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (952 KB)  

    A pulse-width-amplitude-modulation approach is used in an integrated-circuit design of a two-quadrant analog multiplier. The circuit described is a single-chip PWAM multiplier of comparable cost to monolithic transconductance multipliers. It requires an external capacitor and a low-pass filter and achieves accuracies better than 0.5 percent without trimming. Temperature stability is typically 0.00... View full abstract»

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  • An integrated IF amplifier

    Publication Year: 1973 , Page(s): 440 - 447
    Cited by:  Patents (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (829 KB)  

    An IF amplifier that provides a temperature insensitive Q (adjustable independently of center frequency) of 50 at a center frequency of f/SUB 0/ of 1 MHz, over a 100/spl deg/C temperature range is presented. The design also features supply independent biasing, input and output buffering, a 40-dB (automatic gain control) range and a center frequency voltage gain of up to 60 dB. Results obtained fro... View full abstract»

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  • An analysis of low-frequency second-order distortion in bipolar transistors applied to an amplifier

    Publication Year: 1973 , Page(s): 447 - 453
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (717 KB)  

    A distortion theory for bipolar transistors is applied to reduce low-frequency second-order distortion M/SUB 2/ in an amplifier. An equation for M/SUB 2/ is developed in terms of the physical parameters of the transistor. It is found that M/SUB 2/ depends critically on generator resistance that can be optimized for the transistor studied. The theory and this finding are then applied to the distort... View full abstract»

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  • Analog multiplication at high frequencies with a high dynamic range

    Publication Year: 1973 , Page(s): 453 - 456
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (464 KB)  

    An analog multiplier has been constructed by means of field-effect transistors. The multiplier has a dynamic range higher than 80 dB and a frequency response that is flat to within 0.7 dB from 50 to 70 Mhz. This device would be very useful in applications where both inputs may vary by 40 dB or more. View full abstract»

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  • A precision bipolar current-differencing amplifier

    Publication Year: 1973 , Page(s): 456 - 458
    Cited by:  Patents (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (314 KB)  

    A temperature-stable wide-band current-differencing amplifier resulting from the replacement of the usual operational amplifier structures by integrable current-operated modules is reported. This unity gain network features nearly ideal terminal characteristics (R/SUB IN/<0.3 /spl Omega/, R/SUB OUT/ /spl esdot/ 2 M/spl Omega/) and an external adjustment to maximize the subtraction accuracy, or ... View full abstract»

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  • A fast integrated comparator

    Publication Year: 1973 , Page(s): 458 - 462
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (471 KB)  

    An integrated comparator having small input currents due to a novel base-current compensation technique is described. A high gain over a wide band with low dissipation is obtained with a special amplifier configuration. The large voltage swing of the versatile output stage may be decreased as desired. View full abstract»

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  • A TTL compatible threshold gate

    Publication Year: 1973 , Page(s): 470 - 471
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (240 KB)  

    A threshold gate circuit is presented that permits a large number of input weights with good noise margins. This is done by replacing the usual voltage detector with a current detector. Results of testing an experimental ten-input model are given. View full abstract»

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  • Correction to "A Differential Zero-Correction Amplifier"

    Publication Year: 1973 , Page(s): 475
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (71 KB)  

    First Page of the Article
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  • [Back inside cover]

    Publication Year: 1973 , Page(s): b1
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    Freely Available from IEEE
  • Optimization of delay and rise time in iterative multistage wide-band amplifiers

    Publication Year: 1973 , Page(s): 471 - 475
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (464 KB)  

    A method is presented for the optimization of the overall delay and overall rise time in iterative multistage wide-band amplifier circuits. The method is applied to an amplifier consisting of emitter-degenerated stages with distributed ohmic base resistances and lumped collector-base capacitances. Explicit expressions are given for the delay and the rise time, and optimization criteria are present... View full abstract»

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  • Clocked CMOS calculator circuitry

    Publication Year: 1973 , Page(s): 462 - 469
    Cited by:  Papers (38)  |  Patents (19)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1840 KB)  

    A novel circuit technique that has been applied to the world's first CMOS-LSI for a desktop calculator is described in detail. The CMOS-LSI includes 3300 elements and has a chip size of about 200 mil square, operates at 6 V supply voltage, and dissipates power of about 1 mW at a clock frequency of 50 kHz. View full abstract»

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  • Bipolar design considerations for the automotive environment

    Publication Year: 1973 , Page(s): 419 - 427
    Cited by:  Papers (9)  |  Patents (10)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1304 KB)  

    In view of the detrimental voltage transients associated with the automotive environment, and the advantages and limitations of the present bipolar integrated circuits with respect to this environment, new bipolar circuit and device innovations have been specifically developed to economically protect the IC from these destructive transients and improve the IC's functional performance. Many of thes... View full abstract»

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Aims & Scope

The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Michael Flynn
University of Michigan