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IEEE Journal of Solid-State Circuits

Issue 2 • April 1973

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Displaying Results 1 - 19 of 19
  • [Front cover - April 1973]

    Publication Year: 1973, Page(s): f1
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    Freely Available from IEEE
  • [Inside front cover - April 1973]

    Publication Year: 1973, Page(s): f2
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  • Introduction (April 1973)

    Publication Year: 1973, Page(s): 103
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  • A surface-charge shift register with digital refresh

    Publication Year: 1973, Page(s):146 - 151
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1158 KB)

    A digital shift register using the surface-charge transistor structure in which adjacent rows propagate in opposite directions and which has refresh turn-around circuits at the ends of each row is described. Two process compatible refresh circuits requiring only four times the basic bit storage area have been designed, and a test circuit composed of two 16-bit shift registers that propagate in opp... View full abstract»

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  • An analog system for measurement of effective surface mobility in MOS devices

    Publication Year: 1973, Page(s):180 - 182
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (359 KB)

    A circuit consisting of several operational amplifiers and analog multiplier/dividers is used with a conductance measurement system to measure effective surface mobility of MOS devices as a function of gate voltage. Accuracy is limited to gate voltages about 1.5 V greater in magnitude than device threshold. View full abstract»

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  • Contributors (April 1973)

    Publication Year: 1973, Page(s):186 - 189
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  • Advice to Authors

    Publication Year: 1973, Page(s): 190
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  • [Back inside cover]

    Publication Year: 1973, Page(s): b1
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  • Magnetically switched integrated SCR

    Publication Year: 1973, Page(s):175 - 180
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (936 KB)

    The design and performance of a bipolar IC is described, in which a magnetically sensitive lateral p-n-p transistor is applied to the switching of a 25-mA SCR integrated on the same chip. The circuit can be operated from either an ac or dc supply and features an on-chip trim arrangement that allows the threshold magnetic field to be changed by increments of 0.05 (torr), thus providing a means of a... View full abstract»

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  • Digital signal transfer in charge-transfer devices

    Publication Year: 1973, Page(s):116 - 125
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1800 KB)

    The nonlinear properties of digital signal transfer through charge-coupled device and bucket-brigade shift registers are considered in terms of adjacent bit charge levels. A signal transfer efficiency is defined and shown to be a useful parameter for charge-transfer device shift register simulation. Approximate equations are developed for the worst case output bit levels and an approximate formula... View full abstract»

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  • N-channel ion-implanted enhancement/depletion MOSFET's

    Publication Year: 1973, Page(s):184 - 185
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (288 KB)

    The fabrication and performance of n-channel ion-implanted, TTL compatible, enhancement/depletion MOSFET devices and circuits are described. A speed-power product of 10.0 pJ/pF has been experimentally observed. View full abstract»

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  • Transversal filtering using charge-transfer devices

    Publication Year: 1973, Page(s):138 - 146
    Cited by:  Papers (96)  |  Patents (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1608 KB)

    Techniques are presented for making transversal filters using charge-coupled devices and bucket-brigade devices. In a CCD transversal filter, the delayed signals are sampled by measuring the current flowing the clock lines during transfer, and the sampled signals are weighted by a split electrode technique. In a BBD transversal filter, the delayed signals are `tapped' with a source follower whose ... View full abstract»

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  • On the performance of the differential cascode amplifier

    Publication Year: 1973, Page(s):169 - 174
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (704 KB)

    Analysis is made of the differential cascode amplifier stage, an amplifier made of a differential common-emitter input pair driving a differential common-base output pair referenced to the emitter potential of the input pair. The analysis shows the differential cascode amplifier to have one or more orders of magnitude increase in common-mode input resistance and common-mode rejection ratio compare... View full abstract»

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  • Incomplete transfer in charge-transfer devices

    Publication Year: 1973, Page(s):108 - 116
    Cited by:  Papers (19)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1632 KB)

    The authors present a general analysis of incomplete charge transfer in charge transfer devices. By using a lumped-charge model to characterize the dynamics of the charge transfer, they calculate α, the small-signal coefficient of incomplete transfer, in terms of single-device small-signal parameters. They show that three contributions to incomplete transfer are common to all charge-transfer... View full abstract»

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  • The realization of the effect of nonuniform distribution in semiconductor null networks

    Publication Year: 1973, Page(s):182 - 184
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (432 KB)

    Uniform and nonuniform distributed semiconductor devices suitable for null networks were experimentally fabricated and the effect of nonuniform distribution was observed. The temperature sensitivities were measured and compensating circuits are given. The devices are of wide application and suitable for integrated circuit fabrication. View full abstract»

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  • Use of charge-coupled devices for delaying analog signals

    Publication Year: 1973, Page(s):151 - 157
    Cited by:  Papers (37)  |  Patents (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1360 KB)

    The use of charge-coupled devices for delaying analog signals is discussed and demonstrated. Some of the relevant operational factors of the CCD, such as the effect of transfer inefficiency, maximum delay, signal-to-noise ratio and power dissipation are presented. These show that devices with delays in the range 10/SUP -1/-10/SUP -6/s operating at frequencies up to several megahertz and having wid... View full abstract»

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  • The influence of interface states on incomplete charge transfer in overlapping gate charge-coupled devices

    Publication Year: 1973, Page(s):125 - 138
    Cited by:  Papers (29)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2456 KB)

    A simple and accurate model is used to estimate the incomplete charge transfer due to interface states trapping in the overlapping gate charge-coupled devices. It is concluded that trapping in the interface states under the edges of the gates parallel to the active channel limits the performance of the devices at moderate and low frequencies. The influence of the device parameters, dimensions, and... View full abstract»

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  • Practical considerations for analog operation of bucket-brigade circuits

    Publication Year: 1973, Page(s):157 - 168
    Cited by:  Papers (10)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2296 KB)

    The bucket-brigade circuit offers a means of implementing a clock-controlled analog delay line in monolithic form. Operating in the sampled-data domain, it combines some of the advantages of both analog and digital circuits and appears to have a strong application potential in analog signal processing systems. In this paper, the analog operation of bucket-brigade circuits is described with respect... View full abstract»

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  • Measurement of CCD transfer efficiency by use of feedback to increase the effective number of transfers

    Publication Year: 1973, Page(s):104 - 108
    Cited by:  Papers (3)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (760 KB)

    A technique is reported that permits accurate measurement of transfer efficiency in charge-coupled devices that have low overall transfer loss (≤1 percent). By adding a feedback loop the signal is passed through the CCD many times, thus increasing the measured transfer loss. A detailed analysis is given that predicts the expected improvement in the minimum measurable transfer loss through the a... View full abstract»

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Aims & Scope

The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits.

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Meet Our Editors

Editor-in-Chief

Jan Craninckx 
Imec
Kapeldreef 75
B-3001 Leuven, Belgium 
jssc.craninckx@gmail.com