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IEEE Journal of Solid-State Circuits

Issue 1 • Date Feb. 1973

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Displaying Results 1 - 21 of 21
  • [Front cover - February 1973]

    Publication Year: 1973, Page(s): f1
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  • [Inside front cover - February 1973]

    Publication Year: 1973, Page(s): f2
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  • Editor's Notice (February 1973

    Publication Year: 1973, Page(s): 1
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  • Foreword (February 1973

    Publication Year: 1973, Page(s): 2
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  • Integrated electrically tuned X-band power amplifier utilizing Gunn and IMPATT diodes

    Publication Year: 1973, Page(s):3 - 14
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1534 KB)

    A totally integrated X-band power amplifier for FM and PM communication system applications having 1-W output power and 30-dB gain is described. The amplifier consists of two electrically tuned injection-locked oscillator stages taht are tunable over a 500-MHz range with 250-MHz minimum locking bandwidth. A Gunn diode is utilized in the first stage and a silicon IMPATT diode in the second stage os... View full abstract»

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  • A 0.5-W CW IMPATT diode amplifier for high-capacity 11-GHz FM radio-relay equipment

    Publication Year: 1973, Page(s):14 - 20
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1211 KB)

    A stable CW reflection-type Si-IMPATT diode amplifier has been developed as a transmitting high-power amplifier for the 11-GHz-band FM radio-relay system. It is a solid-state 960-channel system with a nominal transmitting power of 500 mW. The circuit design of the amplifier with a unique stabilizing circuit which provides unconditionally stable operation, is described. Also described are the FM no... View full abstract»

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  • Multistage Gunn amplifiers for FM-CW systems

    Publication Year: 1973, Page(s):20 - 28
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (972 KB)

    Waveguide cavity Gunn reflection amplifiers are discussed. Stabilization techniques are outlined, together with some typical pitfalls. Some conclusions are drawn as to how Gunn devices operate in amplifier service. Two special cases are discussed: a two-stage /SUP 1///SUB 2/-W Ku-band amplifier, a four-stage 30-dB gain X-band amplifier. Data are presented on bandwidth, noise, power variation with ... View full abstract»

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  • Design and performance of transferred electron amplifiers using distributed equalizer networks

    Publication Year: 1973, Page(s):29 - 36
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1226 KB)

    This paper describes improved techniques for the design of broad-band linear reflection-type microwave amplifiers using transferred electron devices. These techniques have produced excellent agreement between amplifier design goals and performance. This agreement results from improvements in measuring techniques and data reduction in addition to the use of a distributed equalizer topology. Multist... View full abstract»

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  • Direct frequency modulation with CW Gunn and IMPATT oscillators

    Publication Year: 1973, Page(s):37 - 43
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1109 KB)

    Demodulation of frequency-modulated signals has been carried out with frequency-locked CW Gunn and IMPATT oscillators. The process utilized the coupling between the bias current or voltage, respectively and the frequency deviation of the locked oscillator. A full characterization of this coupling is presented. An incremental model of the large-signal oscillator behavior is developed and shown to b... View full abstract»

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  • A circuit mode chart for high-efficiency avalanche diode oscillators

    Publication Year: 1973, Page(s):44 - 53
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1646 KB)

    A circuit mode chart for use with TRAPATT diode microwave oscillators is described. The chart relates the diode mean voltage and mean current levels to the parameters of the diode microwave waveforms. It consists of lines drawn in the diode `mean current-mean voltage' plane which define boundaries to an area in which the oscillator can operate. With the exception of a bias load line, these lines o... View full abstract»

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  • X- and Ku-band amplifiers with GaAs Schottky-barriers field-effect transistors

    Publication Year: 1973, Page(s):54 - 58
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1023 KB)

    During recent years significant progress has been made in GaAs technology and the GaAs Schottky-barrier field-effect transistor now shows outstanding microwave gain and noise properties. Two experimental microwave amplifiers demonstrate that the device is very well suited for broad-band applications and that large bandwidth in the X- and Ku-band can be obtained with simple circuits. The first of t... View full abstract»

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  • Cryogenic cooling of mixers for millimeter and centimeter wavelengths

    Publication Year: 1973, Page(s):58 - 63
    Cited by:  Papers (62)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (960 KB)

    It is shown theoretically that cryogenically cooling a Schottky-barrier mixer only slightly increases the conversion loss while giving a considerable reduction in mixer noise. The d.c. bias and local oscillator drive must be appropriately scaled. Experimental results indicate that in conjunction with a cooled paramp IF amplifier, single-sideband (SSB) receiver noise temperatures of ~350 K at 85 GH... View full abstract»

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  • Gigahertz-rate 100-V pulse generator

    Publication Year: 1973, Page(s):63 - 66
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (676 KB)

    A high-density electron-hole plasma generated within a high-efficiency avalanche diode induces a sharp, high-voltage pulse on a transmission line. A novel gigahertz-rate pulse generator has been constructed utilizing the high- efficiency microwave avalanche diode. An impedance discontinuity within the circuit gives rise to a sharp pulse with undistorted waveform, which keeps retriggering the diode... View full abstract»

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  • A wide-band low-shape-factor amplifier module using an acoustic surface- wave bandpass filter

    Publication Year: 1973, Page(s):66 - 70
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (805 KB)

    An amplifier module using a novel surface-wave bandpass filter for a spread spectrum communication receiver has been designed to realize wide-band low-shape-factor requirements. This module with a center frequency of 168 MHz has a midband gain of 6 dB, a 7.1 percent fractional bandwidth (3-dB bandwidth of 12 MHz), and an extremely low-shape factor of 1.32 to 1 (ratio of 3 to 40-dB bandwidth). Exce... View full abstract»

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  • Thermal printer

    Publication Year: 1973, Page(s):71 - 78
    Cited by:  Papers (3)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1350 KB)

    This paper describes a method of printing using solid-state thermal printers. A matrix of silicon transistor-resistor heating elements organized in a 5/spl times/7 array is used to print on thermographic paper at speeds up to 30 characters/s. Material processing capable of achieving high-performance (<100 mJ/element energy dissipation for a clearly printed character) and high reliability (>2... View full abstract»

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  • A microcircuit tone generator for push-button dialing

    Publication Year: 1973, Page(s):78 - 84
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (865 KB)

    A new microcircuit tone generator fabricated with tantalum thin film and a custom IC in a dual-in-line plastic pack is described. Novel designs of filter, amplifier, and amplitude limiting have been used that enable operation over a wide frequency range, wide supply voltage range, and wide temperature range while maintaining excellent stability. Interfacing of the tone generator is very flexible e... View full abstract»

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  • Noise performance of low-sensitivity active filters

    Publication Year: 1973, Page(s):85 - 91
    Cited by:  Papers (21)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1102 KB)

    The noise limitations of some important low-sensitivity RC-active filter realizations are derived; the inherent rms noise (noise from essential network resistors) that exists at the output terminals of a bandpass active filter is determined for two-integrator loop and positive impedance converter filter realizations. Output noise spectral density and total rms output noise are determined for the t... View full abstract»

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  • Improved MOS transducer drive circuit [piezoelectric transducers]

    Publication Year: 1973, Page(s):92 - 93
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (313 KB)

    The operation and design of a novel floating gate MOS output circuit is described. The circuit uses a unique variable positive feedback that increases the speed significantly and decreases the circuit area. View full abstract»

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  • Programmable active filters [spectrum analyzer application]

    Publication Year: 1973, Page(s):93 - 95
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (437 KB)

    A general method of electronically controlling the parameters of second-order state-variable filters using analog multipliers is presented. Three configurations are shown as examples with experimental results. A spectrum analyzer is discussed as a simple application of tunable filters. View full abstract»

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  • Contributors (February 1973)

    Publication Year: 1973, Page(s):96 - 100
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  • [Back inside cover]

    Publication Year: 1973, Page(s): b1
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Aims & Scope

The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Michael Flynn
University of Michigan