By Topic

Solid-State Circuits, IEEE Journal of

Issue 2 • Date April 1969

Filter Results

Displaying Results 1 - 12 of 12
  • [Front cover - April 1969]

    Page(s): f1
    Save to Project icon | Request Permissions | PDF file iconPDF (26 KB)  
    Freely Available from IEEE
  • [Inside front cover - April 1969]

    Page(s): f2
    Save to Project icon | Request Permissions | PDF file iconPDF (122 KB)  
    Freely Available from IEEE
  • Computer-aided design and characterization of digital MOS integrated circuits

    Page(s): 57 - 64
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1284 KB)  

    A computer-aided circuit-simulation method is developed to enable the design, characterization, and optimization of MOS integrated circuits. The computation of dc and transient characteristics is done in terms of physical device parameters extracted from processing information and incorporated in an analytical device model. It is demonstrated that any MOS circuit configuration (with its associated series resistances and parasitic devices) can be analyzed in terms of an equivalent inverter. Input-output transfer characteristics are obtained by superposition of the load and transistor I-V characteristics, providing the necessary information for dc > `worst-case' design. A simple device model was used to compute circuit transient response. All the computed characteristics are in good agreement with measurements performed on integrated circuits. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Noise-reduction techniques of high-frequency oscillator-high- order multipliers and avalanche-diode-type microwave sources

    Page(s): 65 - 70
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (975 KB)  

    Results of noise-reduction techniques by injection phase locking to a master oscillator and through the use of high-Q cavities are presented for a class of high- frequency oscillator-high-order multiplier and avalanche-diode oscillator microwave sources. Frequency and amplitude noise spectra are described for two states of oscillation: free-running and injection phase-locked for the video range 300 hertz to 10 MHz off the carrier frequency. At X band, a rms noise deviation less than 0.15 hertz in a 100-hertz bandwidth has been achieved at frequencies greater than 10 kHz off the carrier for the free-running high- frequency oscillator-high-order multiplier source. Corresponding results obtained for a free-running avalanche- diode oscillator was a flat 6-hertz spectrum across the video range 1 kHz to 100 kHz. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Bistable light-detection devices

    Page(s): 71 - 74
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (640 KB)  

    The effect of optical feedback in light-amplifier radiation detectors is discussed, with spectral reference to bistable operation. High- and low-impedance systems are considered and the operating characteristics of a number of such detectors are presented. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A noise model for the distributed transistor

    Page(s): 75 - 80
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (938 KB)  

    A transistor model having a distributed base region and distributed sources of noise is analyzed. An equivalent lumped-noise model is derived. The model includes all the conventional sources of shot noise and thermal noise in the base region. It is found that the transistor shot noise is uneffected by the distributed nature of the base. Mean-square thermal noise is found to be proportional to the real part of a complex base impedance. An excess noise source due to the distributed base is found but is shown to be negligible compared to thermal noise generated in the base. The distributed-noise model reduces to the conventional lumped-noise model at low frequencies. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A radiation-sensitive time-selector switch

    Page(s): 83 - 84
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (406 KB)  

    A time-selector switch that is triggered by ionizing radiation is presented. Two transistors in a balanced bridge circuit are turned on by radiation and shunt the signal path to ground. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A direct-coupled hybrid IC amplifier with 1-ns rise time

    Page(s): 86 - 88
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (613 KB)  

    This paper describes the design and operation of a wide-band direct-coupled pulse amplifier, with a voltage gain of 10 and a rise time of 1 ns. Computer-aided analysis and simulation are used to optimize the design and to predict the performance of the amplifier. Good agreement is obtained between the predicted and experimental results. In an attempt to improve the frequency response through the reduction of parasitic capacitive and inductive effects, the amplifier has been fabricated as a hybrid IC by use of thin-film resistors and silicon chip transistors mounted on a ceramic substrate. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Contributors (April 1969)

    Page(s): 89
    Save to Project icon | Request Permissions | PDF file iconPDF (231 KB)  
    Freely Available from IEEE
  • 1969 IEEE International Solid-State Circuits Conference

    Page(s): 90 - 95
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1219 KB)  

    Presents abstracts for the articles comprising the 1969 IEEE International Solid-State Circuits Conference proceedings. The conference was held at the University of Pennsylvania, Philadelphia, PA, USA (February 19-21, 1969). View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Four-terminal field-effect transistors for amplitude modulation

    Page(s): 84 - 86
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (656 KB)  

    An amplitude modulator using a field-effect tetrode transistor (FETT) is investigated. The operation of the modulation circuit is based on the `linear mode' where the transconductance from one gate to the drain is a linear function of the bias signal at the other gate. Experimental result shows that the modulator has good linearity for RF application. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Diode and transistor equivalent circuits for transient operation

    Page(s): 80 - 83
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (584 KB)  

    Solid-state devices have complex energy storage effects that complicate their transient operation. A frequently used method of analysis is that of charge control. This method relies upon quasi-static equilibrium and may have significant errors for high-speed operation. The method proposed uses a series approximation to a convolution integral solution. The first term of the series is equivalent to charge-control operation and higher order terms provide improved accuracy in terms of lumped elements of an equivalent circuit, but the real merit of the series form is its ready adaptability to computer- programmed node-branch circuits analysis. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.

Aims & Scope

The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Michael Flynn
University of Michigan