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Solid-State Circuits, IEEE Journal of

Issue 3 • Date Sept. 1968

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Displaying Results 1 - 25 of 37
  • [Front cover - September 1968]

    Publication Year: 1968 , Page(s): f1 - f2
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    Freely Available from IEEE
  • [Inside front cover - September 1968]

    Publication Year: 1968 , Page(s): f2
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    Freely Available from IEEE
  • Editor's Notice (September 1968)

    Publication Year: 1968 , Page(s): 207
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    Freely Available from IEEE
  • Foreword: Solid-State Microwave Circuits

    Publication Year: 1968 , Page(s): 208
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    Freely Available from IEEE
  • Solid-state bulk phenomena and their application to integrated electronics

    Publication Year: 1968 , Page(s): 210 - 212
    Cited by:  Papers (5)  |  Patents (1)
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    Travelling high-field domains in bulk semiconductors can be used to perform complex electronic functions over a wide range of speeds and power levels. This article reviews the domain properties in gallium arsenide and cadmium sulfide and indicates some applications to high-speed digital electronics. View full abstract»

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  • High-power punch-through avalanche-diode microwave oscillators

    Publication Year: 1968 , Page(s): 213 - 217
    Cited by:  Papers (4)
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    Two distinctive modes of oscillation are observed in specially profiled silicon avalanche diodes: transit-time mode at 3 to 7 GHz at lower bias current densities and an anomalous mode at around 1 GHz above certain threshold current levels. High pulsed power has been produced from both modes of operation. Space-charge-induced negative resistances are computed and their dependence on device parameters are discussed. Experimentally observed correlations between these two modes, including a locking behavior of the anomalous mode by the transit-time mode, and the computed and observed slight negative resistance at the anomalous-mode threshold suggest that the transit- time-mode oscillation and the space-charge-induced negative resistance are two possible pre-requisites for the initiation of the anomalous mode of oscillation. View full abstract»

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  • Varactor-tuned integrated Gunn oscillators

    Publication Year: 1968 , Page(s): 217 - 220
    Cited by:  Papers (8)  |  Patents (1)
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    Electronic tuning of Gunn diodes in hybrid integrated circuits has been studied. Microstrip transmission lines were used to form resonant circuits into which a Gunn diode and a varactor diode were mounted to provide the microwave power and frequency tuning, respectively. Basically, two types of circuits have been investigated. The first is a half-wavelength open-circuited microstrip `cavity' with this transmission line and the varactor diode attached between the end of the cavity and an RF ground. The second is a lumped LC circuit in which the inductance of a short high-impedance microstrip line is resonated with the lumped capacitance of the varactor diode. The latter circuit provides a tuning range of over 10 percent at 7.5 GHz. The power output varies within 2 dB in the tuning range. View full abstract»

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  • X-band IMPATT microstrip power sources

    Publication Year: 1968 , Page(s): 221 - 225
    Cited by:  Papers (3)
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    Silicon avalanche transit-time diodes have been integrated with microstrip oscillator circuits to produce miniaturized X-band power sources. The oscillator circuits are fabricated using thin-film gold or copper on 1 inch by 1 inch, 25-mil thick alumina substrates. Circuits using both capacitive and inductive output coupling have been used with success. CW X-band powers greater than 500 mW at approximately 3 percent efficiency are obtained with these circuits. A method of heat sinking the diodes, which allows input powers up to 25 watts in a 6-mil junction diameter, is discussed. Some of the features of the power sources considered for applications were measured at various power levels and are presented. These include FM and AM noise, injection- locking characteristics, and power accumulation from more than a single diode. View full abstract»

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  • Characterization of ion-implanted IMPATT oscillators

    Publication Year: 1968 , Page(s): 225 - 231
    Cited by:  Papers (2)  |  Patents (1)
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    Recent experimental results on impact avalanche transit-time diode oscillators fabricated by ion implantation are presented. The technique and problems involved are given. The diodes gave CW X-band power output up to 1.4 watts with efficiencies up to 8 percent. AM sideband noise measurements indicate that the load admittance for minimum noise is not coincidental with that load for maximum power output, and that a reduction of 20 dB in noise may be achieved with a reduction of only 0.5 to 3.0 dB in power output from the maximum power point by the proper choice of the load. AM sideband noise as low as 130 dB below the carrier in a 1-kHz bandwidth and at a sideband of 50 kHz from the carrier has been measured utilizing this technique. View full abstract»

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  • 200-Megabit-pulsed avalanche oscillation with Ge silver- bonded diode in 50-GHz region

    Publication Year: 1968 , Page(s): 231 - 233
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    Some experimental results with an IMPATT diode operating in the 50-GHz region are presented, including 200-megabit- pulsed avalanche oscillation, injection locking, frequency spectra of the free running oscillation and the locked oscillation, and the noise spectra around the avalanche oscillation. View full abstract»

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  • a 10-watt S-band solid-state amplifier

    Publication Year: 1968 , Page(s): 233 - 238
    Cited by:  Papers (2)
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    This paper describes the design and performance of an all-solid-state amplifier, which provided 29.5 dB of gain and 9.1 watts of CW output power in the 100-MHz band from 2.2 to 2.3 GHz. The technique used to measure optimum source and load impedances of a class-C transistor at microwave frequencies is shown. A comparison is made of the performance of several single-stage coaxial class-C designs. Attempts to combine several stages at a scale frequency of 1.15 GHz, using both direct paralleling and hybrid-combining, are discussed. Finally, the results obtained in hybrid-combining sixteen stages to obtain the 9.1 watts of CW output are shown. View full abstract»

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  • New technique for combining solid-state sources

    Publication Year: 1968 , Page(s): 238 - 243
    Cited by:  Papers (14)  |  Patents (1)
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    The advent of many new moderate power solid-state devices has created a renewed interest in the techniques for combining these devices to achieve even higher powers. This paper describes a new technique for combining large numbers of energy sources by using a dense array of radiating elements. The impedance of the radiating elements, as determined theoretically and confirmed using an array simulator, may be well mat to parallel one hundred transistor amplifiers has a net gain of 4.75 dB at 410 MHz with 100-watts output. Tests in which individual failures were simulated indicate that array elements were well isolated from each other. View full abstract»

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  • Hybrid circuits for multioctave multiple-throw microwave switches

    Publication Year: 1968 , Page(s): 243 - 246
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    Single-pole multiple-throw microwave switches may be designed as extremely broad-band multistate low-pass filters. SPDT switch design using p-i-n diodes and high-impedance transmission line is described. Extension of the technique to multiple-throw switches is outlined. Two operating examples of the method, an 18-GHz bandwidth SPDT and a 12-GHz SP4T, are discussed. View full abstract»

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  • YIG magnetoelastic two-ports for microwave pulse compression

    Publication Year: 1968 , Page(s): 246 - 250
    Cited by:  Papers (1)
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    By coupling to the magnetoelastic spin-wave mode in YIG crystals with microwave acoustic transducers, dispersive two-port components can be realized. Preliminary characteristics of such a device employing a CdS shear transducer are reported in the UHF range. Elastic coupling losses, spin-wave limiting characteristics, dynamic range, and delay dispersion linearity of YIG devices are discussed for microwave pulse compression applications. View full abstract»

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  • Three-port scattering parameters for microwave transistor measurement

    Publication Year: 1968 , Page(s): 250 - 255
    Cited by:  Papers (2)
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    A 1- 12-GHz swept-frequency nondestructive three-port s- parameter measurement system for small-signal characterization of microwave transistor chips is described and its merits are discussed. The parameter f/SUB s/ is defined as the frequency at which the transducer power gain becomes unity and is introduced as a useful and directly observable parameter for the s-parameter measurement system. Some measurement results for TI L-187 transistors are given and a physical interpretation of the s-parameter data is discussed. View full abstract»

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  • A Ku-band integrated receiver front end

    Publication Year: 1968 , Page(s): 255 - 257
    Cited by:  Papers (5)
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    A Ku-band integrated receiver front end has been fabricated on 20-mil aluminum oxide substrates. The receiver consists of a balanced mixer and a Gunn oscillator within an area of 0.300/spl times/0.325 inch. The performance of both packaged and unpackaged microstripline receivers is described. Using external RF tuning, a noise figure of 9 dB at 18 GHz was obtained. A higher Q Gunn oscillator design is needed for more reliable single-frequency operation. View full abstract»

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  • The impact of LSI on large computing systems

    Publication Year: 1968 , Page(s): 258 - 261
    Cited by:  Papers (1)
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    Technology evolutions in logic and memory through increased integration, combined with potential improvements in machine organization, should provide processor performance in the mid 1970's that exceeds the second generation benchmark (IBM 7090) by a factor of 1000. Serious problems of packaging require a greater system designer sensitivity to the electrical and physical properties of materials, as well as requiring a closer tie between the technologist, system designer, and software designer. The increased processor speeds also create a balancing problem as the processor input- output gap widens, and LSI could assist in the solution of this problem. This paper discusses some of the technology- dependent parameters that could permit predicted performances to be achieved. View full abstract»

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  • Transistor-transistor logic with high packing density and optimum performance at high inverse gain

    Publication Year: 1968 , Page(s): 261 - 267
    Cited by:  Papers (15)
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    The advantages of using thin epitaxial layers for bipolar integrated circuits are discussed in this paper. Using epitaxial layer thicknesses of ~ 1 /spl mu/ and a low-voltage form of transistor-transistor logic, packing densities of 10/SUP 5/ logic gates/in/SUP 2/ have been achieved. The power x delay product of the circuits was 5 pJ. The transistors were formed in 1 /spl mu/ thick epitaxial layers and have inverse common-emitter current gains of 2 to 3. These high inverse gains make practical some new circuit configurations, including a dual-emitter inverter with reduced storage time. The thin epitaxial layer may be p type, rather than the usual n type, and this makes possible a new isolation scheme that allows the fabrication of bipolar integrated circuits using only five photolithographic steps. View full abstract»

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  • An integrated circuit technique for saturation control of switching transistors

    Publication Year: 1968 , Page(s): 267 - 270
    Cited by:  Papers (5)
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    A limited-saturation device technique found to improve the absolute value, spread, and temperature dependence of storage times in integrated transistors, and compatible to existing integrated-circuit processing is described. View full abstract»

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  • An 80-Nanosecond plated-wire store for a time-compression multiplex transmission system

    Publication Year: 1968 , Page(s): 276 - 279
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    A 12-MHz 6500-bit plated-wire memory system is described and properties discussed that show feasibility for application in a time-compression multiplex analog transmission system. The requirements for an assumed ten-channel time-compression multiplex system (TCM) are that 720 words of 9 bits each be written sequentially at a 12-MHz rate and the 720 words be read out at the same rate but in a different sequence. This process of serial write and serial read is continuous as coded samples are taken from each of the ten input channels. The important properties of the memory system described in detail are the generation and steering of the one-ampere word current of 30-ns duration, the effect of the short- duration word current on memory write, and the signal-to-noise ratio achieved using beam-lead diode matrix word selection and beam-lead tantalum film digit detectors. View full abstract»

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  • A coincident-select MOS storage array

    Publication Year: 1968 , Page(s): 280 - 285
    Cited by:  Patents (1)
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    Utilization of MOS monolithic storage arrays in random access memory offers low cost with high performance. An approach is described using a 64-bit coincident-select MOS storage device as the fundamental building block to achieve the low-cost high-performance goals. Device and circuit descriptions as well as cross-talk models are discussed. View full abstract»

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  • Noise figure of FET mixers with HF feedback from output to input

    Publication Year: 1968 , Page(s): 300 - 302
    Cited by:  Papers (3)
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    Theoretical expressions for the noise figure F of FET mixers with HF feedback from output to input are compared with experimental data. Good agreement between theory and experiment is obtained. A noticeable improvement in the noise figure of the mixer is possible with this type of feedback. View full abstract»

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  • Noise in common-base transistor mixers with HF feedback from the output

    Publication Year: 1968 , Page(s): 303 - 304
    Cited by:  Papers (1)
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    It is shown that in the limit of stability the noise figure of common-base transistor mixers with HF feedback from the output is equal to the noise figure of the corresponding HF amplifier. A very substantial improvement in noise figure can be obtained by this type of feedback. View full abstract»

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  • The Q of a capacitor-loaded gyrator

    Publication Year: 1968 , Page(s): 304 - 306
    Cited by:  Papers (1)
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    The result obtained by certain authors for the maximum Q of a gyrator-capacitor simulated inductance is a result already known for a loop containing two imperfect integrators. It is also argued that the feedback integrator is a better building brick for RC active filters than the constant-current integrator. View full abstract»

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  • DC analysis of an MOS source follower

    Publication Year: 1968 , Page(s): 306 - 307
    Cited by:  Papers (1)
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    The source follower operation of a normally off MOS device is analyzed. Input-output relationships in terms of applied voltages and device parameters are derived. Experimental verifications of the foregoing theory are included. View full abstract»

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Aims & Scope

The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Michael Flynn
University of Michigan