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IEEE Journal of Solid-State Circuits

Issue 3 • Date Sept. 1968

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Displaying Results 1 - 25 of 37
  • [Front cover - September 1968]

    Publication Year: 1968, Page(s):f1 - f2
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    Freely Available from IEEE
  • [Inside front cover - September 1968]

    Publication Year: 1968, Page(s): f2
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    Freely Available from IEEE
  • Editor's Notice (September 1968)

    Publication Year: 1968, Page(s): 207
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    Freely Available from IEEE
  • Foreword: Solid-State Microwave Circuits

    Publication Year: 1968, Page(s): 208
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    Freely Available from IEEE
  • Solid-state bulk phenomena and their application to integrated electronics

    Publication Year: 1968, Page(s):210 - 212
    Cited by:  Papers (8)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (417 KB)

    Travelling high-field domains in bulk semiconductors can be used to perform complex electronic functions over a wide range of speeds and power levels. This article reviews the domain properties in gallium arsenide and cadmium sulfide and indicates some applications to high-speed digital electronics. View full abstract»

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  • High-power punch-through avalanche-diode microwave oscillators

    Publication Year: 1968, Page(s):213 - 217
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (724 KB)

    Two distinctive modes of oscillation are observed in specially profiled silicon avalanche diodes: transit-time mode at 3 to 7 GHz at lower bias current densities and an anomalous mode at around 1 GHz above certain threshold current levels. High pulsed power has been produced from both modes of operation. Space-charge-induced negative resistances are computed and their dependence on device paramete... View full abstract»

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  • Varactor-tuned integrated Gunn oscillators

    Publication Year: 1968, Page(s):217 - 220
    Cited by:  Papers (9)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (442 KB)

    Electronic tuning of Gunn diodes in hybrid integrated circuits has been studied. Microstrip transmission lines were used to form resonant circuits into which a Gunn diode and a varactor diode were mounted to provide the microwave power and frequency tuning, respectively. Basically, two types of circuits have been investigated. The first is a half-wavelength open-circuited microstrip `cavity' with ... View full abstract»

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  • X-band IMPATT microstrip power sources

    Publication Year: 1968, Page(s):221 - 225
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1060 KB)

    Silicon avalanche transit-time diodes have been integrated with microstrip oscillator circuits to produce miniaturized X-band power sources. The oscillator circuits are fabricated using thin-film gold or copper on 1 inch by 1 inch, 25-mil thick alumina substrates. Circuits using both capacitive and inductive output coupling have been used with success. CW X-band powers greater than 500 mW at appro... View full abstract»

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  • Characterization of ion-implanted IMPATT oscillators

    Publication Year: 1968, Page(s):225 - 231
    Cited by:  Papers (4)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (649 KB)

    Recent experimental results on impact avalanche transit-time diode oscillators fabricated by ion implantation are presented. The technique and problems involved are given. The diodes gave CW X-band power output up to 1.4 watts with efficiencies up to 8 percent. AM sideband noise measurements indicate that the load admittance for minimum noise is not coincidental with that load for maximum power ou... View full abstract»

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  • 200-Megabit-pulsed avalanche oscillation with Ge silver- bonded diode in 50-GHz region

    Publication Year: 1968, Page(s):231 - 233
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (386 KB)

    Some experimental results with an IMPATT diode operating in the 50-GHz region are presented, including 200-megabit- pulsed avalanche oscillation, injection locking, frequency spectra of the free running oscillation and the locked oscillation, and the noise spectra around the avalanche oscillation. View full abstract»

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  • a 10-watt S-band solid-state amplifier

    Publication Year: 1968, Page(s):233 - 238
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (913 KB)

    This paper describes the design and performance of an all-solid-state amplifier, which provided 29.5 dB of gain and 9.1 watts of CW output power in the 100-MHz band from 2.2 to 2.3 GHz. The technique used to measure optimum source and load impedances of a class-C transistor at microwave frequencies is shown. A comparison is made of the performance of several single-stage coaxial class-C designs. A... View full abstract»

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  • New technique for combining solid-state sources

    Publication Year: 1968, Page(s):238 - 243
    Cited by:  Papers (20)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1141 KB)

    The advent of many new moderate power solid-state devices has created a renewed interest in the techniques for combining these devices to achieve even higher powers. This paper describes a new technique for combining large numbers of energy sources by using a dense array of radiating elements. The impedance of the radiating elements, as determined theoretically and confirmed using an array simulat... View full abstract»

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  • Hybrid circuits for multioctave multiple-throw microwave switches

    Publication Year: 1968, Page(s):243 - 246
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (574 KB)

    Single-pole multiple-throw microwave switches may be designed as extremely broad-band multistate low-pass filters. SPDT switch design using p-i-n diodes and high-impedance transmission line is described. Extension of the technique to multiple-throw switches is outlined. Two operating examples of the method, an 18-GHz bandwidth SPDT and a 12-GHz SP4T, are discussed. View full abstract»

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  • YIG magnetoelastic two-ports for microwave pulse compression

    Publication Year: 1968, Page(s):246 - 250
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (628 KB)

    By coupling to the magnetoelastic spin-wave mode in YIG crystals with microwave acoustic transducers, dispersive two-port components can be realized. Preliminary characteristics of such a device employing a CdS shear transducer are reported in the UHF range. Elastic coupling losses, spin-wave limiting characteristics, dynamic range, and delay dispersion linearity of YIG devices are discussed for m... View full abstract»

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  • Three-port scattering parameters for microwave transistor measurement

    Publication Year: 1968, Page(s):250 - 255
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (659 KB)

    A 1- 12-GHz swept-frequency nondestructive three-port s- parameter measurement system for small-signal characterization of microwave transistor chips is described and its merits are discussed. The parameter f/SUB s/ is defined as the frequency at which the transducer power gain becomes unity and is introduced as a useful and directly observable parameter for the s-parameter measurement system. Som... View full abstract»

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  • A Ku-band integrated receiver front end

    Publication Year: 1968, Page(s):255 - 257
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (699 KB)

    A Ku-band integrated receiver front end has been fabricated on 20-mil aluminum oxide substrates. The receiver consists of a balanced mixer and a Gunn oscillator within an area of 0.300/spl times/0.325 inch. The performance of both packaged and unpackaged microstripline receivers is described. Using external RF tuning, a noise figure of 9 dB at 18 GHz was obtained. A higher Q Gunn oscillator design... View full abstract»

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  • The impact of LSI on large computing systems

    Publication Year: 1968, Page(s):258 - 261
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (456 KB)

    Technology evolutions in logic and memory through increased integration, combined with potential improvements in machine organization, should provide processor performance in the mid 1970's that exceeds the second generation benchmark (IBM 7090) by a factor of 1000. Serious problems of packaging require a greater system designer sensitivity to the electrical and physical properties of materials, a... View full abstract»

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  • Transistor-transistor logic with high packing density and optimum performance at high inverse gain

    Publication Year: 1968, Page(s):261 - 267
    Cited by:  Papers (19)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (838 KB)

    The advantages of using thin epitaxial layers for bipolar integrated circuits are discussed in this paper. Using epitaxial layer thicknesses of ~ 1 /spl mu/ and a low-voltage form of transistor-transistor logic, packing densities of 10/SUP 5/ logic gates/in/SUP 2/ have been achieved. The power x delay product of the circuits was 5 pJ. The transistors were formed in 1 /spl mu/ thick epitaxial layer... View full abstract»

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  • An integrated circuit technique for saturation control of switching transistors

    Publication Year: 1968, Page(s):267 - 270
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (463 KB)

    A limited-saturation device technique found to improve the absolute value, spread, and temperature dependence of storage times in integrated transistors, and compatible to existing integrated-circuit processing is described. View full abstract»

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  • An 80-Nanosecond plated-wire store for a time-compression multiplex transmission system

    Publication Year: 1968, Page(s):276 - 279
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (668 KB)

    A 12-MHz 6500-bit plated-wire memory system is described and properties discussed that show feasibility for application in a time-compression multiplex analog transmission system. The requirements for an assumed ten-channel time-compression multiplex system (TCM) are that 720 words of 9 bits each be written sequentially at a 12-MHz rate and the 720 words be read out at the same rate but in a diffe... View full abstract»

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  • A coincident-select MOS storage array

    Publication Year: 1968, Page(s):280 - 285
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1429 KB)

    Utilization of MOS monolithic storage arrays in random access memory offers low cost with high performance. An approach is described using a 64-bit coincident-select MOS storage device as the fundamental building block to achieve the low-cost high-performance goals. Device and circuit descriptions as well as cross-talk models are discussed. View full abstract»

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  • Noise figure of FET mixers with HF feedback from output to input

    Publication Year: 1968, Page(s):300 - 302
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (255 KB)

    Theoretical expressions for the noise figure F of FET mixers with HF feedback from output to input are compared with experimental data. Good agreement between theory and experiment is obtained. A noticeable improvement in the noise figure of the mixer is possible with this type of feedback. View full abstract»

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  • Noise in common-base transistor mixers with HF feedback from the output

    Publication Year: 1968, Page(s):303 - 304
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (234 KB)

    It is shown that in the limit of stability the noise figure of common-base transistor mixers with HF feedback from the output is equal to the noise figure of the corresponding HF amplifier. A very substantial improvement in noise figure can be obtained by this type of feedback. View full abstract»

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  • The Q of a capacitor-loaded gyrator

    Publication Year: 1968, Page(s):304 - 306
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (291 KB)

    The result obtained by certain authors for the maximum Q of a gyrator-capacitor simulated inductance is a result already known for a loop containing two imperfect integrators. It is also argued that the feedback integrator is a better building brick for RC active filters than the constant-current integrator. View full abstract»

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  • DC analysis of an MOS source follower

    Publication Year: 1968, Page(s):306 - 307
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (200 KB)

    The source follower operation of a normally off MOS device is analyzed. Input-output relationships in terms of applied voltages and device parameters are derived. Experimental verifications of the foregoing theory are included. View full abstract»

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Aims & Scope

The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Jan Craninckx 
Imec
Kapeldreef 75
B-3001 Leuven, Belgium 
jssc.craninckx@gmail.com