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IEEE Journal of Solid-State Circuits

Issue 2 • Date June 1968

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Displaying Results 1 - 25 of 39
  • [Front cover - June 1968]

    Publication Year: 1968, Page(s):f1 - f2
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    Freely Available from IEEE
  • [Inside front cover - June 1968]

    Publication Year: 1968, Page(s): f2
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  • Editor's Notice (June 1968)

    Publication Year: 1968, Page(s): 43
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    Freely Available from IEEE
  • Foreword (June 1968)

    Publication Year: 1968, Page(s): 45
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    Freely Available from IEEE
  • Integrated Microwave Modules - A Prospectus

    Publication Year: 1968, Page(s):46 - 50
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (892 KB)

    Applications of monolithic and hybrid semiconductor circuit technologies to microwaves are discussed from a semitechnical and economic viewpoint. Technical feasibility of performing nearly all functions through millimeter waves is foreseen. Economic success, however, is less tangible and depends mainly on two factors: the willingness of systems people to trade increased initial cost for greatly de... View full abstract»

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  • X-Band Integrated Circuit Mixer with Reactively Terminated Image

    Publication Year: 1968, Page(s):50 - 59
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1488 KB)

    An X-band mixer using GaAs Schottky barrier diodes with a thin-film 500-MHz IF preamplifier was developed using hybrid microwave integrated circuit techniques. The balanced mixer had filters to provide a short circuit at the image frequency. The entire mixer preamplifier occupied an area of only 0.38 square inches and had a noise figure of 6.7 dB which corresponded quite closely to the theoretical... View full abstract»

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  • A High-Performance Integrated Microwave Circuit Frequency Quadruple

    Publication Year: 1968, Page(s):82 - 86
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (834 KB)

    An S- to X-band frequency quadrupler was developed with a 4.0-dB conversion loss and 11-percent bandwidth using hybrid integrated microwave circuit techniques. The multiplier has a low-pass transforming filter on the input and a bandpass filter consisting of half-wavelength lines edge coupled over quarter wavelengths on the output. Design curves for the bandpass filter are given for ceramic micros... View full abstract»

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  • Design Considerations for an Integrated 1.8-GHz Parametric Amplifier

    Publication Year: 1968, Page(s):86 - 90
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (824 KB)

    A hybrid-integrated parametric amplifier has been fabricated in a microstrip transmission-line configuration. General design considerations and their implementation in a microstrip medium are discussed. The amplifier exhibited a power gain of 10 dB and 50-MHz half-power bandwidth with a noise figure of 2.0 dB. It was pumped at X-band frequency and required only 10 mW of pump power.The integrated p... View full abstract»

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  • Computer Aided Design of Wide-Band Integrated Microwave Transistor Amplifiers on High Dielectric Substrates

    Publication Year: 1968, Page(s):91 - 101
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1528 KB)

    The problem of wide bandwidth and flat in-band gain response for microwave transistor amplifiers has been reduced to the optimization of a number of important variables from computer prepared design charts. Through the general flexibility of the computer-generated data, a large variety of amplifier responses are possible using distributed circuit matching networks. As experimental verification of ... View full abstract»

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  • An Accurate Calculation of Uniform Microstrip Transmission Lines

    Publication Year: 1968, Page(s):101 - 106
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (877 KB)

    An analytical program for calculating the field distribution about a microstrip transmission line bounded by a shielding wall is used to calculate the impedance, velocity, and attenuation parameters. The program input parameters are the dimensions of the strip and shielding wall and the relative dielectric constant of the substrate material. The field distribution about the strip is integrated to ... View full abstract»

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  • Optimization of Diode Structures for Monolithic Integrated Microwave Circuits

    Publication Year: 1968, Page(s):107 - 112
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (997 KB)

    Device requirements of a medium power Ku-band reflective phase shifter are reviewed indicating a requirement for a diode with a 4-Terrahertz cut-off frequency. Various structures are examined to test their suitability for integration and feasibility for meeting specifications. A "pocket version" of a surface oriented device design is chosen and described. It is shown to meet or exceed all electric... View full abstract»

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  • GaAs Integrated Microwave Circuits

    Publication Year: 1968, Page(s):113 - 116
    Cited by:  Papers (4)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (767 KB)

    GaAs has many desirable features that make it most useful for microwave and millimeter-wave integrated circuits.The process of selective epitaxial depositions of high purity single-crystal GaAs with various doping concentrations into semi-insulating GaAs substrates has been developed. These high-resistivity substrates (> 10 /sup 6/ ohm cm) provide the electrical isolation between devices, elimi... View full abstract»

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  • Millimeter-Wave Integrated Circuits

    Publication Year: 1968, Page(s):117 - 123
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1220 KB)

    Monolithic millimeter-wave integrated circuits have been designed and fabricated on semi-insulating GaAs substrates using microstrip transmission lines. Circuits using hybrid techniques have also been constructed on quartz and ceramics. This paper shows that microstrip-line integrated circuits are feasible at millimeter-wave frequencies. Circuit functions have been constructed and tested in the 25... View full abstract»

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  • Design of Digital Loaded-Line Phase-Shift Networks for Microwave Thin-Film Applications

    Publication Year: 1968, Page(s):124 - 130
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1110 KB)

    This paper describes the design approach, fabrication techniques, and electrical performance for two types of microwave hybrid thin-film phase shifters. Emphasisis placed on the practical aspects of the overall design and fabrication. A simplified set of design equations for loaded-line phase-shift networks is presented and divided into three categories based on the type of loading employed. The t... View full abstract»

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  • An Evaluation of Materials and Processes for Integrated Microwave Circuits

    Publication Year: 1968, Page(s):131 - 137
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1312 KB)

    This paper presents an evaluation of materials and processes applicable to the fabrication of hybrid microstrip microwave circuits. Substrate materials evaluated included aluminas, beryllias, quartz, and glass of varying purities and surface finishes. Conductor materials evaluated included silver, copper, gold, and aluminum. Fabrication processes studied included vacuum deposition, sputtering, ele... View full abstract»

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  • A 3-dB Directional Coupler for Microwave Integrated Circuits

    Publication Year: 1968, Page(s):138 - 139
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (411 KB)

    A procedure for designing quarter-wavelength 3-dB directional couplers is described which utilizes a perturbation technique to reduce the number of experimental models needed during the development. Limitations caused by unequal odd and even mode phase velocities and junction parasitics are discussed.The use of thin-film conductors on quartz and glazed ceramic gives a coupling accuracy better than... View full abstract»

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  • A Multistub Filter for Microstripline

    Publication Year: 1968, Page(s):139 - 142
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (631 KB)

    A maximally flat multistub filter was designed using both /spl lamda/ /4 shorted and /spl lamda/ /2 open stubs and constructed on ceramic substrate using microstrip transmission lines. View full abstract»

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  • High-Power 1-GHz Coplanar Gunn-Effect Oscillators

    Publication Year: 1968, Page(s):142 - 146
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (412 KB)

    High peak pulsed output power (up to 100 watts), coplanar, L-band (1 GHz), epitaxial-layer Gunn oscillators are described. Particular emphasis has been given to minimizing surface damage and to effective heat dissipation. These high-power oscillators have been used in both coaxial and stripline circuits. The latter are adaptable to integrated circuitry. View full abstract»

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  • Hybrid Integrated L-Band Transmitter

    Publication Year: 1968, Page(s):144 - 145
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    Microstrip circuit techniques are applied to the development of a small, light-weight, ruggedized, L-band 200-mW oscillator. Performance data of the oscillator are given and two applications, a radiosonde and a projectile telemetry transmitter, are described. View full abstract»

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  • Recent Experimental Work on Silicon Microstrip Microwave Transmission Lines

    Publication Year: 1968, Page(s):145 - 146
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (368 KB)

    In recent years a great deal of literature has become available on microstrip transmission lines, generated by interest in microwave integrated circuitry. At high frequencies, microstrip on silicone is of interest so that the microwave circuits may be constructed on the same material as the active devices. View full abstract»

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  • A Microstrip Nonreciprocal Tunable YIG Filter

    Publication Year: 1968, Page(s):146 - 148
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (525 KB)

    A nonreciprocal tunable YIG filter in a microstrip configuration has been constructed which makes use of a novel method of generating a circularly polarized field in the plane of a microstrip circuit. Nonreciprocities in excess of 40 dB have been obtained at X band with relatively low insertion loss and VSWR. View full abstract»

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  • Contributors (June 1968)

    Publication Year: 1968, Page(s):148 - 151
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    Freely Available from IEEE
  • A High-Performance 3-Watt Monolithic Class-B Power Amplifier

    Publication Year: 1968, Page(s):152 - 160
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1496 KB)

    A monolithic class-B power amplifier has been built that is capable of delivering 3 watts sinewave power to a direct-coupled load with less than 0.4 percent total harmonic distortion over the range from 20 Hz to 20 kHz. It occupies a single 45 by 60 mil die and is fabricated using conventionrd all-diffused processing technology. The circuit employs an all n-p-n, direct-coupled, transformerless out... View full abstract»

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  • Picosecond Integrated Circuits in Germanium and Silicon

    Publication Year: 1968, Page(s):160 - 162
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (448 KB)

    Recent advances in semiconductor technology make possible a planar technology for germanium similar to that used for silicon integrated circuits. Calculations based upon material properties indicate a considerable advantage to germanium over silicon for high-speed logic-switching applications.This is due largely to the better electron and hole mobilities for germanium. Switching circuit delays hav... View full abstract»

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  • Wide-Band Oscillating Limiters at X-Band and L-Band Frequencies

    Publication Year: 1968, Page(s):163 - 165
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (490 KB)

    Injection-locked tunnel diode oscillators have been designed and tested as oscillating limiters. Units have been operated and tested at X-band and L-band frequencies. Most of the units tested had output power variations that were less than 0.5 dB for input power variations in excess of 30 dB. Bandwidths of 30 percent with 10 dB of gain are predicted from theory and have been realized in practice. ... View full abstract»

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Aims & Scope

The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits.

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Meet Our Editors

Editor-in-Chief
Michael Flynn
University of Michigan