Issue 3 • Sep 2002
Cited by: Papers (6)
This paper presents a detailed physical investigation of trapping effects in GaAs power HFETs. Two-dimensional numerical simulations, performed using a hydrodynamic model that includes impact ionization, are compared with experimental results of fresh as well as hot-carrier-stressed HFETs in order to gain insight of intertwined phenomena such as the kink in the dc output curves, the hot-carrier de... View full abstract»
Reliability of VLSI-level chip assembly for evaluating the development of back-end technologies using a test chip with a top two-level metal structurePublication Year: 2002, Page(s):50 - 59
Cited by: Papers (2)
This paper investigates the effects of area and location of a chip, the material from which it is encapsulated, the geometry of the test structures, accelerated stressing operations and process technologies on the reliability of a VLSI-level chip assembly by using a 12 mm × 12 mm large-die-size test chip with various top two-level metal test structures. The test chip is fabricated in a gener... View full abstract»
Cited by: Papers (4)
A silicon p-n junction biased in avalanche breakdown mode emits visible light. Such a diode offers the potential for very large scale integration (VLSI)-compatible light emitters for on/off chip signal transmission and contactless functional testing of wafers. The reliability of such emitters must be evaluated before widespread use is possible. Si light emitters were stressed with ac excitation, d... View full abstract»
Aims & Scope
IEEE Transactions on Device and Materials Reliability is published quarterly. It provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the manufacture of these devices; and the interfaces and surfaces of these materials.
Meet Our Editors
Anthony S. Oates
Taiwan Semiconductor Mfg Co.