Issue 2 • Date Jun 2002
Cited by: Papers (5) | Patents (1)
This paper presents a detailed investigation of the degradation of electrostatic discharge (ESD) strength with high gate bias for deep-submicron salicided ESD protection nMOS transistors, which has significant implications for protection designs where high gate coupling occurs under ESD stress. It has been shown that gate-bias-induced heating is the primary cause of early ESD failure and that this... View full abstract»
Presents a design and screening approach that can be adopted to improve reliability of high-power 980-nm semiconductor lasers. Flared-ridge waveguide chips were realized on GRIN-SCH single-quantum-well structures. Without any screening, flared devices, thanks to the reduced peak power and current density, showed a 20% reduction in failure rate with respect to devices with straight waveguide. By ad... View full abstract»
Cited by: Papers (1)
Electromigration noise analysis has shown great potential for the nondestructive evaluation of electromigration performance of metal stripe. However, contradictive conclusions have been published from the electromigration noise analysis. These contradictive conclusions mainly stem from the complex dynamics of the atomic movement during electromigration, rendering the electromigration noise as a no... View full abstract»
Aims & Scope
IEEE Transactions on Device and Materials Reliability is published quarterly. It provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the manufacture of these devices; and the interfaces and surfaces of these materials.
Meet Our Editors
Anthony S. Oates
Taiwan Semiconductor Mfg Co.