Issue 1 • Mar 2002
Cited by: Papers (7)
In this paper, we will investigate SILC effects on the reliability of E2PROM memories. Particularly, we will analyze the influence on the retention properties of E2PROM memory devices of program/erase number of cycles and bias conditions, oxide thickness scaling and quality, and storage field. To accomplish this task, we will use a recently proposed compact E2PROM ... View full abstract»
Cited by: Papers (20)
A new simple method of measuring capacitance-voltage characteristics of MOS devices is presented. Proceeding from the charge-based capacitance measurement technique suggested recently, a compact test structure with high resolution has been developed, which only requires measurement of do quantities. The method was tested on a 0.6-μm CMOS process with small and large area capacitors and compared... View full abstract»
NMOSFET ESD self-protection strategy and underlying failure mechanism in advanced 0.13-μm CMOS technologyPublication Year: 2002, Page(s):2 - 8
Cited by: Papers (7) | Patents (2)
In this paper, the high current characteristics encountered during electrostatic discharge (ESD) stress using nMOS/Lnpn protection devices in a 0.13-μm CMOS technology are investigated for different device parameters: channel length, channel width, gate-oxide thickness, and drain/source contact to gate (DCG/SCG) spacing. From leakage current measurements following ESD stress, it is c... View full abstract»
Aims & Scope
IEEE Transactions on Device and Materials Reliability is published quarterly. It provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the manufacture of these devices; and the interfaces and surfaces of these materials.
Meet Our Editors
Anthony S. Oates
Taiwan Semiconductor Mfg Co.