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IEE Proceedings - Circuits, Devices and Systems

Issue 1 • Date Feb 2002

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Displaying Results 1 - 9 of 9
  • Low-frequency noise in III-V high-speed devices

    Publication Year: 2002, Page(s):59 - 67
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1007 KB)

    Low-frequency noise results obtained for III-V pseudomorphic high electron mobility transistors (PHEMTs) and heterojunction bipolar transistors (HBTs) are reviewed. The experimental noise set-up is presented and the equivalent circuits of devices including noise sources are established. Excess low-frequency noise comprises 1/f and Lorentzian-type components. An overview of gate and drain low-frequ... View full abstract»

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  • Low frequency noise in thin film transistors

    Publication Year: 2002, Page(s):75 - 82
    Cited by:  Papers (8)  |  Patents (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (844 KB)

    Works concerning low frequency noise in thin film transistors are reviewed and significant results reported. To offer relevant noise analysis, some considerations on the electrical conduction in thin film transistors are presented. Based on these considerations, models generally used to describe low frequency noise in thin film transistors are given. They stem from those developed for 1/f noise in... View full abstract»

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  • Low frequency and 1/f noise in wide-gap semiconductors: silicon carbide and gallium nitride

    Publication Year: 2002, Page(s):32 - 39
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (932 KB)

    The results of experimental and theoretical studies of low-frequency noise in wide-bandgap semiconductors and wide-band-gap semiconductor devices are reviewed. The unusual features of the low-frequency noise in these systems include an extremely low level of noise in SiC and SiC-based devices and a large difference in the noise level in GaN-based films and GaN-based field effect transistors (FETs)... View full abstract»

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  • Electrical noise as a reliability indicator in electronic devices and components

    Publication Year: 2002, Page(s):13 - 22
    Cited by:  Papers (5)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1395 KB)

    Low-frequency electrical noise is well accepted as a very sensitive measure of the quality and reliability of electrical components and electronic devices. It shows changes in magnitude very much greater than in the static electrical properties. The excess noise is due to defects and nonideality in the device. Although the excess noise is a general indicator of quality there can be many physical p... View full abstract»

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  • Low-frequency noise in deep-submicron metal-oxide-semiconductor field-effect transistors

    Publication Year: 2002, Page(s):23 - 31
    Cited by:  Papers (7)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (924 KB)

    The author reviews the recent results obtained on the low-frequency noise characteristics of deep-submicron metal-oxide-semiconductor field-effect transistors (MOSFETs). The manuscript covers measurements, analysis and modelling of 1/f noise as well as random telegraph signals (RTS). In addition, techniques are presented where RTS and 1/f noise measurements can be utilised to characterise the oxid... View full abstract»

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  • Low-frequency noise in polysilicon-emitter bipolar transistors

    Publication Year: 2002, Page(s):40 - 50
    Cited by:  Papers (7)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1156 KB)

    The authors present a review of low-frequency noise (LFN) in polysilicon-emitter (PE) bipolar junction transistors (BJTs). It includes noise results from unstressed as well as stressed devices. A discussion of the possible physical origins of low-frequency noise is presented. Details of noise measurement and a simple noise equivalent circuit, with related noise spectral-density expressions, are gi... View full abstract»

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  • Has SiGe lowered the noise in transistors?

    Publication Year: 2002, Page(s):51 - 58
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (915 KB)

    It is shown that low-frequency noise (LFN) in SiGe-base HBTs and SiGe-channel pMOSFETs can be made significantly lower than it is in their all-Si counterparts. The noise reduction in the HBTs results principally from the elimination of the emitter/base interfacial oxide, which, in the Si bipolar junction transistors, serves to boost the current gain. A reduction in the LFN in the SiGe channel pMOS... View full abstract»

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  • Noise in hydrogenated amorphous silicon

    Publication Year: 2002, Page(s):68 - 74
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (776 KB)

    Published work on conductance fluctuations in hydrogenated amorphous silicon is surveyed. There are many reports of 1/f noise, some describing unusual features such as nonGaussian statistics. The relative insensitivity to doping and temperature is highlighted. In addition to the 1/f noise, random-telegraph-like noise is often reported. The successes and failures of generation-recombination models ... View full abstract»

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  • 1/f noise in homogeneous and inhomogeneous media

    Publication Year: 2002, Page(s):3 - 12
    Cited by:  Papers (9)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1148 KB)

    Some experimental techniques for low-frequency resistance noise measurements are discussed. The criterion for using a low-noise current amplifier instead of voltage amplifier is given. A distinction is made between contact and bulk resistance contributions to the observed I If noise. The merits and difficulties of the application of the empirical relation for the 1/f noise in homogeneous and inhom... View full abstract»

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