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Microwave Theory and Techniques, IEEE Transactions on

Issue 9 • Date Sep 1990

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Displaying Results 1 - 25 of 30
  • Effect of power reflection on the operation of a low-Q 8 GHz gyrotron

    Publication Year: 1990 , Page(s): 1345 - 1351
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (516 KB)  

    The operating characteristics of a low-Q (Qcav=225), 8-GHz gyrotron oscillator operating in the TE011O mode and submitted to various mismatched loads are reported. Under matched conditions, output power up to 310 kW (η=35%) and maximum efficiency up to 43% were measured. In general, power reflection from loads with different phases and amplitudes leads to an output power decrease. Excessive reflections cause mode switching (TE011O to TE012 O) or even arcing inside the tube. The effect of power reflection is seen to increase rapidly with current and output power. Nevertheless, as predicted by calculations, the maximum output power is not reached under matched conditions but with a specific nonzero value of the complex reflection coefficient View full abstract»

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  • GaAs IC's fabricated with the high-performance, high-yield multifunction self-aligned gate process for radar and EW applications

    Publication Year: 1990 , Page(s): 1232 - 1241
    Cited by:  Papers (2)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1040 KB)  

    Design and test results are presented for several multiuse GaAs ICs for radar and electronic warfare (EW) applications. The chips described are a redundant switch, a broadband distributed amplifier, a broadband variable-gain amplifier, a 2.5-GHz sample and hold, a 1-GHz analog-to-digital converter, and an L-band buffered prescalar. These ICs, fabricated with the ITT 0.4-μm-gate MESFET multifunction self-aligned gate (MSAG) process, demonstrate excellent performance View full abstract»

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  • A high-performance, miniaturized X-band active mixer for DBS receiver application with on-chip IF noise filter

    Publication Year: 1990 , Page(s): 1249 - 1251
    Cited by:  Papers (2)  |  Patents (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (204 KB)  

    A GaAs monolithic microwave integrated circuit (MMIC) dual-gate FET active mixer at X-band is described that is designed for direct broadcast satellite (DBS) applications. All of the components of the mixer, including biasing circuitry, RF, LO, and IF matching networks, as well as the IF noise filter, are implemented monolithically into a 25-mil×30-mil area. The design was process tolerant, and layout was compact for manufacturability and low cost. The mixer was integrated monolithically into a complete single-chip DBS low-noise block (LNB) converter. The active mixer has a conversion gain of 5.5 dB and a single-sideband noise figure of 8.5 dB. The circuit is manufactured using a 0.5-μm gate length, buried p- depletion mode MESFET process without substrate-through via holes View full abstract»

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  • A new way to optically control a millimeter-wave oscillator

    Publication Year: 1990 , Page(s): 1360 - 1362
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (228 KB)  

    A new way to optically control a millimeter-wave oscillator is proposed. Instead of illuminating the active area of the semiconductor of the diode, a plasma is injected onto a semiconductor which is a part of the controlled oscillator circuit. This technique is called distributed constant optical control, and it can be used in various oscillators regardless of the principle of oscillation of the controlled oscillator. In contrast to previously reported optically controlled oscillators, which usually give a negative frequency variance response to the controlling light signals, the proposed method can produce a positive frequency variance. In experiments, an increasing optically controlled frequency variance of about 150 MHz was observed in a Ka -band Gunn oscillator View full abstract»

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  • Divider and combiner line-unified FET's as basic circuit function modules. I

    Publication Year: 1990 , Page(s): 1210 - 1217
    Cited by:  Papers (15)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (652 KB)  

    The purpose is to realize miniaturized and broadband function blocks with very simple configurations for multifunction monolithic microwave circuits. FET-sized combiners and dividers, in phase and out of phase, based on a novel line-unified-FET (LUFET) concept are described and demonstrated. Some effective extensions such as extended combiner LUFETs, magic T LUFETs, and phase inverter LUFETs are also described. The extension of the basic combiner and divider LUFETs allows the realization of various circuit functions in a very small area. The area of fabricated LUFETs is between 0.1 and 0.3 mm2, and the operating frequency bandwidth approaches 20 GHz. The LUFET mitigates the size and complexity problems considerably and expands the application of combiners and dividers to various multifunction microwave monolithic integrated circuits (MMICs) View full abstract»

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  • A 225 GHz polarimetric radar

    Publication Year: 1990 , Page(s): 1252 - 1258
    Cited by:  Papers (13)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (532 KB)  

    An incoherent 225-GHz polarimetric radar capable of measuring the Mueller matrix of point and distributed targets is described. The transmitter employs an extended interaction oscillator that transmit 60-W pulses of 50- to 600-ns duration. Incoherent measurements of the Mueller matrix are achieved by transmitting four linearly independent polarizations and measuring the scattered wave using a dual-polarized receiver. A novel calibration technique that requires a single in-scene reflector is presented. Polarimetric measurements are presented of a dihedral corner reflector and foliage which are the first polarimetric measurements reported at this wavelength. The foliage measurements indicate a pronounced sensitivity of the polarimetric data to fine-scale surface structure View full abstract»

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  • Monolithic integrated blanking up-converter

    Publication Year: 1990 , Page(s): 1227 - 1231
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (536 KB)  

    A novel GaAs monolithic integrated DC-coupled up-converter is presented. It up-converts a 0.1- to 0.5-GHz signal to 0.6 to 1.75 GHz. The high level of integration has been achieved in a small chip size of 1.22 mm×1.22 mm by utilizing active matching techniques. A wideband local oscillator (LO) amplifier, an active 180° splitter, a double-balanced mixer, an RF amplifier, an actively matched IF amplifier, and an RF blanking circuit are integrated on a GaAs chip. The up-converter exhibits an 8-dB conversion gain, a maximum input/output voltage standing wave ratio (VSWR) of less than 1.6, and a 40-dB RF blanking for an IF of 0.1 to 0.5 GHz and LO of 0.5-1.25 GHz. The measured results are in good agreement with the simulated results View full abstract»

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  • Complex modes in shielded suspended coupled microstrip lines

    Publication Year: 1990 , Page(s): 1278 - 1286
    Cited by:  Papers (16)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (800 KB)  

    The existence of complex modes in electrically shielded suspended coupled microstrip lines has been studied extensively, and the results are presented. A rigorous full-wave spectral-domain approach (SDA) with a newly proposed and tested set of basis functions can efficiently and accurately determine the propagation characteristics of the dominant, higher-order, and complex modes for planar or quasi-planar transmission lines. These basis functions are validated by comparing the convergence study of field solutions with those obtained by various sets of preconditioned bases and by the unconditioned subdomain ones. Excellent agreement is obtained for the propagation constants and the normalized complex longitudinal and transverse current distributions on conducting strips for the strongly coupled microstrip lines. For all the particular case studies discussed, it is shown that the complex modes may exist in all the shielded suspended coupled microstrip lines, even when the substrate dielectric constant is low. Theoretical results for the fundamental, higher-order, evanescent, and complex modes are presented for suspended coupled microstrip lines View full abstract»

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  • The current distribution and AC resistance of a microstrip structure

    Publication Year: 1990 , Page(s): 1268 - 1277
    Cited by:  Papers (47)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (760 KB)  

    The AC resistance of the strip in a microstrip structure is compared with that of an isolated strip for better understanding of the conductor loss mechanism. An analysis is presented of the AC resistance in a microstrip structure for any metallization thickness by deriving the current distribution over the strip cross section. The analysis uses the separation of variables technique and the Green's function method. It shows that the skin current of the strip is concentrated toward the ground plane in a microstrip structure. In the extreme case, the AC resistance of the strip can be twice as high as the AC resistance of the same isolated strip. The imperfect ground plane also adds to the total conductor loss of a microstrip line. For a wide strip over a lossy ground plane at high frequency, the ground plane surface current distribution is concentrated directly under the strip, and the ground plane AC resistance can be as large as the strip AC resistance. Therefore, the total AC resistance at the microstrip line can be four times as high as that of an isolated strip conductor View full abstract»

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  • Integration of high-Q GaAs varactor diodes and 0.25 μm GaAs MESFET's for multifunction millimeter-wave monolithic circuit applications

    Publication Year: 1990 , Page(s): 1183 - 1190
    Cited by:  Papers (6)  |  Patents (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (728 KB)  

    Two technologies are demonstrated whereby high-Q, vertical-structure, abrupt-junction varactor diodes are monolithically integrated with 0.25-μm GaAs MESFETs on semi-insulating GaAs substrates for multifunction millimeter-wave monolithic circuit applications. Diodes with various anode sizes have been realized with measured capacitance swings of >2.1:1 from 0 V to -4 V and series resistances of approximately 1 Ω. Diodes having a zero bias capacitance of 0.35 pF have Q's of >19000 (50 MHz) with -4 V applied to the anode. Under power bias conditions, the MESFETs have a measured gain of >6 dB at 35 GHz with extrapolated values for f t and fmax of 32 GHz and 78 GHz, respectively. Using these technologies, a monolithic Ka-band voltage controlled oscillator (VCO) containing a varactor diode, a 0.25-μm GaAs MESFET, and the usual MMIC passive components has been built and tested. At around 31 GHz, the circuit has demonstrated 60-mW power output with 300 MHz of tuning bandwidth View full abstract»

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  • Multifunction SAG process for high-yield, low-cost GaAs microwave integrated circuits

    Publication Year: 1990 , Page(s): 1175 - 1182
    Cited by:  Papers (18)  |  Patents (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (756 KB)  

    A new fully planar, multifunction refractory self-aligned gate (MSAG) technology suitable for the fabrication of GaAs small-signal and power microwave monolithic integrated circuits (MMICs) is demonstrated in a manufacturing environment. Data on the distribution of DC and RF performance and yield for pilot production of discrete FETs and MMICs are presented. The heart of the MSAG process is a planar, self-aligned gate FET. It uses a refractory TiWN Schottky gate and exhibits high performance for small-signal microwave, power microwave, and digital circuit applications. Lots with good wafer yields have demonstrated average chip yields on PCM good wafers of 45%, 49%, and 36% for 2-10-GHz distributed amplifiers, 1-W C-band power amplifiers, and 4-W power amplifiers, respectively View full abstract»

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  • MIMIC from the Department of Defense perspective

    Publication Year: 1990 , Page(s): 1171 - 1174
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (368 KB)  

    The microwave and millimeter wave monolithic integrated circuits (MIMIC) program is a Defense Advanced Research Projects Agency initiative to provide affordable, reliable, and reproducible microwave and millimeter-wave circuits in monolithic format for use in US Department of Defense (DoD) systems. The objectives of the program, progress being made toward meeting those objectives, and some planned future work are described. The overall program object is to provide the needed microwave and millimeter-wave products at a price that will allow their use in fielded DoD systems, that meet all required electrical, mechanical, and environmental parameters, and that continue to operate reliably for the time necessary to fulfil their intended application. Programs in progress include work on gallium arsenide epitaxial growth techniques; multiple chip ceramic packages, process, device, and circuit modeling; on-wafer testing techniques; and advanced fabrication techniques View full abstract»

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  • Analysis of energy coupling into spheroidal ferritic implants for hyperthermia applications

    Publication Year: 1990 , Page(s): 1259 - 1267
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (576 KB)  

    The coupling of energy of RF power into lossy tissues using a needle-shaped ferromagnetic implant excited by an externally applied current loop is analyzed theoretically. The ferritic implant is assumed to be of prolate spheroidal shape, while the tissue medium is modeled as a lossy sphere. The electromagnetic fields inside the ferritic implant, the surrounding lossy tissue, and the free space are appropriately expressed in terms of spherical and spheroidal wave functions. Application of the boundary conditions results in an infinite system of equations for the unknown field expansion coefficients. This system is truncated and solved and the electromagnetic field is computed numerically. Absorbed power density inside the implant and the surrounding medium is computed, and the efficiency of the method in producing in-depth energy deposition is examined View full abstract»

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  • Multifunction MMIC history from a process technology perspective

    Publication Year: 1990 , Page(s): 1164 - 1170
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (808 KB)  

    The different types of multifunction microwave monolithic integrated circuits (MMICs) that have been developed to date are reviewed, and projections for the future direction of the technology are made. Various innovative circuit design techniques have allowed a wide range of functions to be performed using the same processes as single-function MMICs. These circuits are almost exclusively based on GaAs Schottky-barrier-gate ion-implanted MESFETs, MIM capacitors, inductors, and (sometimes) through-substrate vias on GaAs substrates. Chips performing all the microwave functions of radar transmit/receive modules, receivers, and frequency synthesizers have been developed. Process complexity is a dominant factor determining their practicality and cost, and the most successful circuits have been designed with process limitations in mind. In the future, proliferation of multifunction MMICs with even greater functional complexity is expected, but additional process complexities will be added sparingly View full abstract»

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  • A new method of modeling three-dimensional MIC/MMIC circuits: the space-spectral domain approach

    Publication Year: 1990 , Page(s): 1309 - 1318
    Cited by:  Papers (16)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (668 KB)  

    A new space-spectral domain analysis is developed to characterize arbitrarily shaped, spatial three-dimensional (3-D) discontinuities in microwave integrated circuits (MICs) and monolithic microwave integrated circuits (MMICs). The method is very general and combines the advantages of the spectral-domain analysis (SDA) with that of the one-dimensional method of lines (MOL). The unique combination of the one-dimensional SDA, using a continuous Fourier transformation, with the one-dimensional MOL, using a discrete Fourier transformation, makes it possible to analyze circuit configurations which were difficult or impossible to analyze before. A comparison of data obtained from the space-spectral domain approach (SSDA) and the SDA and measurements for a rectangular patch resonator shows excellent agreement. The new approach is numerically very efficient and can be applied to planar transmission lines on insulating as well as semiconducting substrates with and without open boundaries. Several resonator structures are analyzed to demonstrate the usefulness of this new method View full abstract»

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  • Full-wave analysis of coplanar waveguides by variational conformal mapping technique

    Publication Year: 1990 , Page(s): 1339 - 1344
    Cited by:  Papers (7)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (448 KB)  

    A new full-wave analysis of coplanar waveguides is presented. The modified mapping technique of C.P. Wen (1969) is used to map the original infinite domain into a finite image domain and also to account for the singularity of fields near the conductor edges. The finite thickness of the dielectric substrate is considered together with the assumptions of lossless guides and negligible metallization thickness. The current distributions on the center signal strip as well as the tangential electric fields over the slot along the air-dielectric interface are examined. Numerical results for the frequency-dependent effective dielectric constants and characteristic impedances of coplanar waveguides are presented. Particular attention is given to the electric field distributions over the air-dielectric interface of slots and the current distributions of the signal strip View full abstract»

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  • Absorbing boundary conditions for the finite-element analysis of planar devices

    Publication Year: 1990 , Page(s): 1328 - 1332
    Cited by:  Papers (14)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (376 KB)  

    The finite-element method is used to determine the scattering matrices of open devices in two dimensions. Microwave and optical devices in which the fields are not confined to a finite region can be analyzed with the finite-element method if special boundary conditions are used to absorb outgoing radiation. The absorbing boundary conditions can be imposed by the addition of two terms to the usual functional for the scalar Helmholtz equation. Universal matrices are introduced to allow the additional terms to be easily assembled, for polynomial orders one through four. Results are given for the impedance of a parallel-plate waveguide radiating into free space and for the scattering parameters of three dielectric slab waveguide devices: a rectangular discontinuity, a feed structure, and a junction View full abstract»

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  • Dual-chip GaAs monolithic integration Ku-band phase-locked-loop microwave synthesizer

    Publication Year: 1990 , Page(s): 1204 - 1209
    Cited by:  Papers (14)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (572 KB)  

    Two novel multifunction monolithic chips, GaAs microwave monolithic integrated circuit (MMIC) and large-scale integration (LSI) chips, have been developed to realize an extremely small and lightweight microwave synthesizer. The MMIC includes a voltage-controlled oscillator, a dual-output buffer amplifier, a balun, and dynamic/static prescalers. To integrate these functions on a single chip, each circuit has been drastically reduced in size by utilizing a uniplanar MMIC configuration. The LSI includes a dual-modulus prescalar, programmable counters, and a phase/frequency comparator. By incorporating these two monolithic chips in the structure, a Ku-band microwave synthesizer has been fabricated in an 11-mm×23-mm flat package. The synthesizer to which these multifunction chips were applied had a tuning range broader than 1 GHz in the Ku-band with a flatness within 2 dBpp. In spite of low-Q monolithic circuitry, single-sideband (SSB) phase noise was as low as -70 dBc/Hz View full abstract»

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  • Three-dimensional analysis of electromagnetic fields in rectangular waveguides by the boundary integral equation method

    Publication Year: 1990 , Page(s): 1300 - 1308
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (636 KB)  

    A rapidly convergent expression of electromagnetic fields in rectangular waveguides is proposed for three-dimensional electromagnetic field analysis by using the integral equation method. The new method is an improved image expansion method utilizing the rapid convergence of the orthogonal expansion method. By this new method, the slow convergence of the orthogonal method with currents near an observation point can be removed completely. In order to investigate the adequacy of the new expression, the fields produced by the line electric and magnetic current segments are calculated and compared with the values obtained by the orthogonal expansion method. This confirms that the new expression gives accurate numerical values with a short computing time. Electromagnetic fields in a rectangular waveguide with circular metallic and dielectric posts are analyzed by using the new expression. From computed values, equivalent circuits of the metallic and dielectric post are obtained and compared with values obtained by N. Marcuvitz (1951). Reasonably good agreement is obtained View full abstract»

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  • Three-dimensional finite-element solution of dielectric scattering obstacles in a rectangular waveguide

    Publication Year: 1990 , Page(s): 1352 - 1359
    Cited by:  Papers (16)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (512 KB)  

    A numerical approach is described for the analysis of scattering from dielectric obstacles in a rectangular waveguide. The approach is a combination of the finite-element method and the analytical solution. In order to save computer memory, the substructure method is introduced in the finite-element method. To combine the uniform waveguide region with the finite-element-method region, evanescent modes and propagating modes are considered in the analytical solution. Spurious fields like the spurious solutions generated in the finite-element analysis of three-dimensional eigenvalue problems can appear in the three-dimensional discontinuity problems when the variational expression in terms of three components of the magnetic field is used. To suppress and eliminate the spurious fields, the penalty function method is also introduced. To confirm the validity and usefulness of the approach, numerical examples are shown for a rectangular dielectric scattering obstacle in a waveguide View full abstract»

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  • Dispersion characteristics of curved microstrip transmission lines

    Publication Year: 1990 , Page(s): 1366 - 1370
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (280 KB)  

    An empirical expression for the effective dielectric permittivity of curved microstrip transmission lines is derived. This expression is very general because it can also be used for rectangular microstrip lines by considering a rectangular line as a curved line of infinite radius of curvature. The closed-form expression for the frequency dependence of the effective dielectric permittivity of a rectangular microstrip line is compared with other available results. This expression for the frequency dependence of the effective dielectric permittivity of curved microstrip transmission lines is simple, accurate, and suitable for CAD implementation. The measured and computed results for various curved microstrip lines are compared, and excellent agreement between the two is obtained View full abstract»

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  • Divider and combiner line-unified FET's as basic circuit function modules. II

    Publication Year: 1990 , Page(s): 1218 - 1226
    Cited by:  Papers (1)  |  Patents (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (744 KB)  

    For pt.I see ibid., vol.38, no.9, p.1210-17 (1990). Applications of line-unified FETs (LUFETs) to RF signal processing elements such as multiport combiner/dividers, mixers, balanced modulators, signal path switches, and circulators are proposed and demonstrated. A 2×1 combiner monolithic microwave integrated circuit (MMIC) using an in-phase combiner LUFET and an N×N combiner/divider based on the 2×1 combiner topology are presented. A single-end mixer and a balanced mixer implemented by combining divider and combiner LUFETs are presented, and a balanced mixer LUFET is proposed. A balanced modulator which is realized by slightly changing the phase inverter LUFET configuration is presented. This modulator is also a LUFET. A signal path switch with a configuration of symmetrically combined magic T LUFETs is presented. A circulator which is a combination of in-phase and out-of-phase divider and combiner LUFETs is presented. The areas of the fabricated LUFETs and LUFET MMICs are between 0.1 and 1.5 mm2, the average being about 0.5 mm2 View full abstract»

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  • Multifunction silicon MMIC's for frequency conversion applications

    Publication Year: 1990 , Page(s): 1191 - 1198
    Cited by:  Papers (6)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (704 KB)  

    The application of advanced silicon bipolar IC technology to multifunction microwave monolithic integrated circuits (MMICs) is demonstrated. The modeling, design, and testing of two silicon MMICs for frequency conversion applications are illustrated. The first product is a wideband frequency doubler with conversion gain, 20-dBc rejection of harmonics, and a 2-GHz bandwidth. The second product is a wideband vector demodulator (or image reject mixer) that utilizes an onchip digital frequency divider to generate 0° and 90° local oscillator (LO) phases from 0.05 to 1.5 GHz. Both products operate from a single 5-V supply, are load insensitive, require no external baluns, and are packaged in 180-mil hermetic packages. These frequency conversion MMICs and others currently under development have been prototyped on the analog silicon transistor array starCHIP-1, which is also described View full abstract»

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  • 2-4 GHz monolithic lateral p-i-n photodetector and MESFET amplifier on GaAs-on-Si

    Publication Year: 1990 , Page(s): 1199 - 1203
    Cited by:  Papers (6)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (600 KB)  

    The design, fabrication, and evaluation of broadband lateral p-i-n photodetectors monolithically integrated with multistage MESFET amplifiers on GaAs-on-Si are described. Unique features of this approach are that (a) the lateral p-i-n structure is compatible with monolithic microwave integrated circuit (MMIC) technology and (b) the p-i-n detector is fabricated directly on the GaAs buffer layer without p+ and n+ implants, thus resulting in a simplified fabrication process. The operation of the circuit is compared to that of a similar circuit fabricated on a GaAs substrate. A quantum efficiency exceeding 60% has been measured for the p-i-n detectors. The 2- to 4-GHz frequency responses of one- and two-stage p-i-n/FET preamplifiers are presented. The response varies ±3 dB over the frequency band View full abstract»

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  • A new formulation of the boundary condition at infinity for a hybrid radiation mode and its application to the analysis of radiation modes of microstrip lines

    Publication Year: 1990 , Page(s): 1294 - 1299
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (416 KB)  

    A new formulation of the boundary condition at infinity for a hybrid radiation model is introduced. It is shown that its application leads to an iterative solution of the problem in the spectral domain. The validity of the condition is proved by its application to the analysis of a laterally shielded dielectric slab. Using this condition, an iterative method in the spectral domain is proposed in order to analyze striplike stratified transmission lines. As a result, two solutions, classified as perturbed longitudinal electric (LSE) and longitudinal section magnetic (LSM) modes, are obtained. Numerical results concerning the convergence of the method as well as the field distribution are presented for the case of a microstrip line View full abstract»

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The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design..

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