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Electron Devices, IEEE Transactions on

Issue 2 • Date Feb 2002

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Title History

On interface and oxide degradation in VLSI MOSFETs. II. Fowler-Nordheim stress regime

On interface and oxide degradation in VLSI MOSFETs. I. Deuterium effect in CHE stress regime

Flicker noise in gate overlapped polycrystalline silicon thin-film transistors

SILC as a measure of trap generation and predictor of T_BD in ultrathin oxides

A novel approach for focusing electron beams using low-cost ceramic grid [field emitter arrays]

Linear cofactor difference method of MOSFET subthreshold characteristics for extracting interface traps induced by gate oxide stress test

A study of soft and hard breakdown - Part I: Analysis of statistical percolation conductance

Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers

A new compact DC model of floating gate memory cells without capacitive coupling coefficients

Ultralow resistance W/poly-Si gate CMOS technology using amorphous-Si/TiN buffer layer

A 0.2-μm 180-GHz-f_max 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

Large-area lateral p-i-n photodiode on SOI

Threshold voltage roll-up/roll-off characteristic control in sub-0.2-μm single workfunction gate CMOS for high-performance DRAM applications

A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling

Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs

Transparent and quasi-transparent regional solutions to minority-carrier transport in arbitrarily doped semiconductors

High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT

Ambipolar Schottky-barrier TFTs

Design and fabrication of 50-nm thin-body p-MOSFETs with a SiGe heterostructure channel

Sub-f_t gain resonance of InP/InGaAs-HBTs

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