Issue 1 • Date Jan. 2002
Filter Results
Displaying Results 1 - 19 of 19
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Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
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PDF (88 KB)
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Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11 2 0) face
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PDF (61 KB)
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Reduction in leakage current of low-temperature thin-gate oxide by repeated spike oxidation technique
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PDF (53 KB)
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Determining the onset frequency of nonquasistatic effects of the MOSFET in AC simulation
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PDF (69 KB)
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Equivalent cell approach for extraction of the SILC distribution in flash EEPROM cells
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PDF (60 KB)
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Nonquasistatic transient model of fully-depleted SOI MOSFET and its application to the analysis of charge sharing in an analog switch
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PDF (64 KB)
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The spacer/replacer concept: a viable route for sub-100 nm ultrathin-film fully-depleted SOI CMOS
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PDF (93 KB)
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Aims & Scope
IEEE Electron Device Letters contains articles related to the theory, design, performance and reliability of electron devices.
Meet Our Editors
Editor-in-Chief
Yuan Taur
University of California at San Diego, ECE


