Electron Devices, IEEE Transactions on
Issue 9 • Date Sept. 1990
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Displaying Results 1 - 25 of 27
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Comments, with reply, on "One-dimensional non-quasi-static models for arbitrarily and heavily doped quasi-neutral layers in bipolar transistors" by B. Wu and F. Lindholm
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PDF (575 KB)
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Sub-quarter-micrometer gate-length p-channel MOSFETs with shallow boron counter-doped layer fabricated using channel preamorphization
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PDF (728 KB)
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Promising storage capacitor structures with thin Ta2O 5 film for low-power high-density DRAMs
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PDF (924 KB)
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Subthreshold slope in thin-film SOI MOSFETs
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PDF (776 KB)
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Determination of the spatial variation of the carrier lifetime in a proton-irradiated Si n+-n-p+ diode by optical-beam-induced current measurements
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PDF (280 KB)
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Analysis of latchup-induced photon emissions
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PDF (376 KB)
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An improved method to correlate measured circuit speed with simulation [CMOS gate arrays]
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PDF (332 KB)
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On 1/
f trapping noise in MOSTs |
PDF (412 KB)
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Optimization of the doping profile in Si permeable base transistors for high-frequency, high-frequency, high-voltage operation
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PDF (784 KB)
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Numerical analysis of nonequilibrium electron transport in AlGaAs/InGaAs/GaAs pseudomorphic MODFETs
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PDF (696 KB)
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An all-electrical floating-gate transmission line model technique for measuring source resistance in heterostructure field-effect transistors
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PDF (228 KB)
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A device model for metal-semiconductor-metal photodetectors and its applications to optoelectronic integrated circuit simulation
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PDF (380 KB)
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Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
