Electron Devices, IEEE Transactions on
Issue 8 • Date Aug 1990
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Displaying Results 1 - 22 of 22
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Low-frequency dispersion of transconductance in GaAs JFETs and MESFETs with an ion-implanted channel layer
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PDF (464 KB)
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The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors
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PDF (780 KB)
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Optical and noise characteristics of amorphous Si/SiC superlattice reach-through avalanche photodiodes
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PDF (536 KB)
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A novel high-gain image sensor cell based on Si p-n APD in charge storage mode operation
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PDF (696 KB)
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Improved current gain and
f T through doping profile selection in linearly graded heterojunction bipolar transistors |
PDF (792 KB)
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Power-supply voltage impact on circuit performance for half and lower submicrometer CMOS LSI
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PDF (596 KB)
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Alpha-particle-induced charge transfer between n+ regions in high-density trench DRAM with isolated p-well structures
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PDF (752 KB)
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Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
