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Circuits, Devices and Systems, IEE Proceedings -

Issue 2 • Date Apr 2001

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Displaying Results 1 - 10 of 10
  • Recent advances in power semiconductor devices

    Publication Year: 2001 , Page(s): 53 - 54
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (292 KB)  

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  • Modelling of self-protected light-triggered thyristors

    Publication Year: 2001 , Page(s): 55 - 63
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (1916 KB)  

    The paper describes the work carried out in modelling the self-protected light-triggered thyristor (SPELTT). In particular, a sophisticated quasi-three-dimensional model was developed for the structure, which included all the important circuit device interactions. The model was used to investigate the sensitivity of critical operation timings to various processing parameters for the structure. Excellent agreement was found with experimental measurements on the device. The predictive capability of the model has led to identifying approaches which significantly improve the device performance View full abstract»

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  • Electromechanical evaluation of a bondless pressure contact IGBT

    Publication Year: 2001 , Page(s): 89 - 93
    Cited by:  Papers (5)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (856 KB)  

    The paper presents some of the electromechanical design strategies used in the implementation of a completely bond free, pressure contacted IGBT with integral anti-parallel diode. The mechanical, thermal and electrical properties of a pressure contacted IGBT are compared to those exhibited by substrate mounted devices. These differences indicate that the bondless pressure contact IGBT offers the potential of higher reliability and other exploitable advantages in certain applications View full abstract»

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  • Design of single-gated multiple-mode power semiconductor devices

    Publication Year: 2001 , Page(s): 64 - 70
    Cited by:  Papers (1)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (1244 KB)  

    A new method is used to design a power semiconductor device which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between the IGBT and thyristor modes of operation. The design of single-gated devices with multiple modes and aspects of their switching behaviour are discussed View full abstract»

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  • Clustered insulated gate bipolar transistor: a new power semiconductor device

    Publication Year: 2001 , Page(s): 75 - 78
    Cited by:  Papers (3)  |  Patents (1)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (428 KB)  

    For the first time, the authors demonstrated a new MOS gated thyristor called the clustered insulated gate bipolar transistor (CIGBT), which is formed by clustering power MOSFET cathode cells within common n- and p-wells. The nand p-wells also provide a unique self-clamping feature that protects the cathode from any surge current or voltage and thus improve its safe operating area. Detailed electrical simulations of 3 kV structures derived directly from a process simulator indicate at least 30% improvement in the on-state and switching performance of the CIGBT in comparison to an IGBT View full abstract»

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  • Recent progress and current issues in SiC semiconductor devices for power applications

    Publication Year: 2001 , Page(s): 101 - 108
    Cited by:  Papers (7)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (1576 KB)  

    A review of current issues in SiC device processing technology is followed by a critical assessment of the current state-of-the-art and future potential for SiC power devices. Material quality, ion implantation, the SiC-SiO2 interface and the thermal stability of contacting systems are all identified as requiring further work before the full range of devices and applications can be addressed, The evaluation of current device technology reveals that SiC Schottky and PIN diodes are already capable of increased power densities and substantially improved dynamic performance compared to their Si counterparts. Although direct replacement of Si devices is not yet economically viable, improvements in system performance and reductions in total system cost may be realised in the short term. Widespread use will, however, require continued improvements in wafer quality while costs must fall by a factor of ten. Finally, the development of new and improved packaging techniques, capable of handling increased die temperature and high thermal cycling stresses, will be needed to fully exploit the potential of SiC View full abstract»

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  • Injection-enhancement effect in a novel, trench-planar insulated gate bipolar transistor

    Publication Year: 2001 , Page(s): 79 - 82
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (472 KB)  

    A novel 1.2 kV, trench-planar insulated gate bipolar transistor (TPIGBT) is analysed in detail using numerical modelling techniques to evaluate the influence of the injection-enhancement (IE) effect. A major innovative aspect of the device is that the trench and the planar gate oxide dimensions can be independently optimised to achieve superior performance. Furthermore, it is shown that the low conduction losses of the TPIGBT are a direct consequence of the IE effect. Results indicate a good trade-off in terms of on-state and turn-off losses in comparison to the planar and trench gated IGBTs View full abstract»

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  • Innovative low-cost power module

    Publication Year: 2001 , Page(s): 85 - 88
    Cited by:  Papers (1)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (400 KB)  

    Semelab has developed the Smartpack, a compact plastic power module that represents a breakthrough in the packaging of semiconductor die. By virtue of its novel construction, the Smartpack is able to offer significant cost advantages. The Smartpack structure is compared with conventional module technology. The relative thermal performance is examined using finite-element analysis. Details of Smartpack applications are provided, illustrating the module's inherent adaptability, Finally, the suitability of Smartpack for the high-reliability market is addressed View full abstract»

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  • Optimum design of 1.4 kV non-punch-through trench IGBTs: the next generation of high-power switching devices

    Publication Year: 2001 , Page(s): 71 - 74
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (728 KB)  

    The trench insulated gate bipolar transistor (IGBT) is widely regarded as a worthy replacement of DMOS IGBTs and GTO thyristors in a wide range of applications, from motor control (1.4 kV) to HVDC (6.5 kV). An optimum design of 1.4 kV NPT trench IGBTs using a new fully integrated optimisation system comprised of process and device simulators and an RSM optimiser is described. The use of this new TCAD system has contributed largely to realising devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4 kV trench IGBTs are reported, which are in excellent agreement with the TCAD predictions View full abstract»

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  • Finite element modelling of thermal fatigue effects in IGBT modules

    Publication Year: 2001 , Page(s): 95 - 100
    Cited by:  Papers (5)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (960 KB)  

    The effects of progressive thermal fatigue of the solder layer interface on the thermal performance of power module packages have been investigated. Specifically, in the paper the analysis of an 800 A-1800 V IGBT module using finite element techniques is performed. The use of this technique for modelling fatigue effects is thus demonstrated, and a method for estimating the fatigue lifetime of soldered power modules based on the Coffin-Manson relation is also given. Assessed parameters in the three-dimensional model are the thermal resistance, heat flux distribution through the different layers and maximum die temperature. The critical crack length at which the thermal resistance significantly increases is determined from the two-dimensional model. The temperature excursion and shear strain of the solder layer are estimated from dynamic analysis. Finally, all achieved models are calibrated by comparison of predicted results with simple theory and direct temperature measurements View full abstract»

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