Electron Devices, IEEE Transactions on
Issue 6 • Date June 2001
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Displaying Results 1 - 25 of 46
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Changes in the Editorial Board
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PDF (9 KB)
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A high-efficiency thin-film SOI power MOSFET having a self-aligned offset gate structure for multi-gigahertz applications
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The role of tunnel barriers in phase-state low electron-number drive transistors (PLEDTRs)
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High-voltage power integrated circuit technology using SOI for driving plasma display panels
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PDF (200 KB)
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SiGe source/drain structure for the suppression of the short-channel effect of sub-0.1-μm p-channel MOSFETs
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PDF (156 KB)
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Excess noise analysis of separate absorption multiplication region superlattice avalanche photodiodes
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Radio-frequency performance of a state-of-the-art 0.5-μm-rule thin-film SOI power MOSFET
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Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current
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An investigation of laser annealed and metal-induced crystallized polycrystalline silicon thin-film transistors
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A comparison between Monte Carlo and extended drift-diffusion models for abrupt InP/InGaAs HBTs
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PDF (228 KB)
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The impact of interconnection and dielectric materials on the time delay of scaled memory-adder systems
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Extraction of eleven model parameters for consistent reproduction of lateral bipolar snapback high-current I-V characteristics in NMOS devices
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PDF (224 KB)
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Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
