Electron Devices, IEEE Transactions on
Issue 4 • Date April 2001
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Displaying Results 1 - 25 of 34
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Changes in the Editorial Board
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PDF (10 KB)
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Error analysis leading to design criteria for transmission line model characterization of ohmic contacts
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PDF (244 KB)
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Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors
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PDF (272 KB)
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“Gated-diode” in SOI MOSFETs: a sensitive tool for characterizing the buried Si/SiO2 interface
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PDF (88 KB)
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Transimpedance amplifier-based full low-frequency noise characterization setup for Si/SiGe HBTs
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PDF (152 KB)
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A new technique to extract channel mobility in submicron MOSFETs using inversion charge slope obtained from measured S-parameters
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PDF (128 KB)
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Semiclassical and wave mechanical modeling of charge control and direct tunneling leakage in MOS and H-MOS devices with ultra-thin oxides
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PDF (160 KB)
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Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study
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PDF (172 KB)
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Novel nonalloyed thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the fabrication of GaAs MESFETs
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PDF (104 KB)
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Equivalent circuit parameters of resonant tunneling diodes extracted from self-consistent Wigner-Poisson simulation
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PDF (228 KB)
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Integrated amorphous and polycrystalline silicon thin-film transistors in a single silicon layer
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PDF (204 KB)
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Stochastic interconnect modeling, power trends, and performance characterization of 3-D circuits
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PDF (552 KB)
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A triple-beam 6.7 GHz, 340 kW monotron
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PDF (104 KB)
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Projecting lifetime of deep submicron MOSFETs
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PDF (196 KB)
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Novel low-temperature C-V technique for MOS doping profile determination near the Si/SiO2 interface
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PDF (180 KB)
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SOI thermal impedance extraction methodology and its significance for circuit simulation
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PDF (200 KB)
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Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures
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PDF (152 KB)
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Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si3N4 MNSFETs
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PDF (148 KB)
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Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: a comparison study
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PDF (88 KB)
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Temperature dependent studies of InP/InGaAs avalanche photodiodes based on time domain modeling
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PDF (236 KB)
Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
