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IEEE Transactions on Semiconductor Manufacturing

Issue 2 • May 1990

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Displaying Results 1 - 7 of 7
  • How to extract defect densities from distribution

    Publication Year: 1990, Page(s):84 - 88
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (280 KB)

    A technique is presented for representing a defect density, such as might be found on an integrated circuit. Distributions are a powerful tool for presenting defect distributions for test structures and are convenient for yield analysis and modeling. How the concept of distribution can be extended to give more information on the defects is shown. The power of this approach derives from its invaria... View full abstract»

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  • Modeling of Novolak-based positive photoresist exposed to KrF excimer laser UV radiation at 248 nm

    Publication Year: 1990, Page(s):37 - 44
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (704 KB)

    A model is presented for calculating the local exposure and the development rate for a Novolak-resin naphtoquinone-diazide sensitized photoresist exposed to a KrF excimer laser UV radiation at 248 nm. The measured transmission of the pulsed UV radiation through the resist is presented and compared to the simulated one using the model. Classical bleaching characteristics (i.e. the resist transmitta... View full abstract»

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  • Polysilicon resistor trimming by laser link making

    Publication Year: 1990, Page(s):80 - 83
    Cited by:  Papers (4)  |  Patents (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (228 KB)

    A technique for laser trimming of polysilicon resistors has been developed. In this scheme an undoped polysilicon film is patterned lithographically, and then photoresist patterns are used to prevent doping of certain narrow areas of each resistor during the impurity implant; thus, the protected areas remain insulating after wafer processing. Subsequent laser scanning of the undoped regions can pr... View full abstract»

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  • A cluster-modified Poisson model for estimating defect density and yield

    Publication Year: 1990, Page(s):54 - 59
    Cited by:  Papers (21)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (516 KB)

    A simple modification of the Poisson model that accounts for defect clustering when estimating the defect density and yield of a future product is described. The Poisson yield equation is easy to use and interpret, and the composite model can be extended to a layered model without the difficulties associated with, for example, the negative binomial model. The advantage of the method is that the Po... View full abstract»

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  • Integrating CAM and process simulation to enhance on-line analysis and control of IC fabrication

    Publication Year: 1990, Page(s):72 - 79
    Cited by:  Papers (4)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (724 KB)

    The integration of a process simulator with a commercial computer-aided manufacturing (CAM) system to provide a set of powerful tools for process analysis, diagnosis, and control is described. The CAM system acts as the interface to the simulator and maintains the simulation control data as part of the process specification. Making process simulation available in a manufacturing environment allows... View full abstract»

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  • EPAS: an emitter piloting advisory expert system for IC emitter deposition

    Publication Year: 1990, Page(s):45 - 53
    Cited by:  Papers (2)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (732 KB)

    Emitter piloting is a difficult diffusion process in IC manufacturing. The decision for the adjustment of the piloting drive cycle is a heuristic-oriented task. An expert system, the emitter piloting advisory system (EPAS), is used at Harris Semiconductor to advise fab operators on how to adjust piloting cycle time for emitters based on knowledge extracted from the most experienced engineer. EPAS ... View full abstract»

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  • The use and evaluation of yield models in integrated circuit manufacturing

    Publication Year: 1990, Page(s):60 - 71
    Cited by:  Papers (210)  |  Patents (16)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (832 KB)

    The development and refinement of net-die-per-wafer yield models during the past 25 years are reviewed, and the models are tested for accuracy by comparison with actual yield data from seven separate chip companies. Depending on chip size, the more accurate models are the Poisson and the negative binomial. Several models for line yields in wafer fabrication are also covered. For predicting yields ... View full abstract»

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The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components.

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