Electron Devices, IEEE Transactions on
Issue 12 • Date Dec. 2000
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Displaying Results 1 - 25 of 33
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Change of editor-in-chief
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PDF (14 KB)
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2000 index IEEE Transactions on electron devices vol. 47
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Subject index
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Analysis of the depletion layer of exponentially graded p-n junctions with nonuniformly doped substrates
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high-performance and high-reliability 80-nm gate-length DTMOS with indium super steep retrograde channel
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Short channel epi-MOSFET model
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The leakage currents of amorphous silicon thin-film transistors: channel charge emission
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Semiconductor thickness and back-gate voltage effects on the gate tunnel current in the MOS/SOI system with an ultrathin oxide
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PDF (112 KB)
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Density-gradient analysis of MOS tunneling
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Coulomb blockade memory using integrated single-electron transistor/metal-oxide-semiconductor transistor gain cells
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Current transient in polyimide-passivated InP/InGaAs heterojunction bipolar transistors: systematic experiments and physical model
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GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs): optimization of fabrication process and epitaxial layer structure for high-efficiency high-power amplifiers
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PDF (216 KB)
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Threshold voltage reduction model for buried channel PMOSFETs using quasi-2-D Poisson equation
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PDF (188 KB)
Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
