Electron Devices, IEEE Transactions on
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Issue 9 • Date Sep 2000
Society Sponsor
Filter Results
Title History
Displaying Results 1 - 15 of 15
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A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors
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PDF (152 KB)
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EL characteristics of a TFEL/TFT stacked structure display device driven by a HV-Si·TFT circuit
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PDF (120 KB)
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Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing
Dashiell, M.W. ; Troeger, R.T. ; Rommel, Sean L. ; Adam, T.N. ; Berger, Paul R. ; Guedj, C. ; Kolodzey, James ; Seabaugh, Alan C. ; Lake, R. |
PDF (136 KB)
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GaAs quantum wire lasers grown on v-grooved substrates isolated by self-aligned ion implantation
Percival, C. ; Houston, P.A. ; Woodhead, J. ; Al-Khafaji, M. ; Hill, G. ; Roberts, J.S. ; Knights, A.P. |
PDF (164 KB)
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Dynamic range improvement by narrow-channel effect suppression and smear reduction technologies in small pixel IT-CCD image sensors
Tanabe, A. ; Kudoh, Y. ; Kawakami, Y. ; Masubuchi, I. ; Kawai, S. ; Yamada, T. ; Morimoto, M. ; Arai, K. ; Hatano, K. ; Furumiya, M. ; Naliashiba, Y. ; Mutoh, N. ; Orihara, K. ; Teranishi, N. |
PDF (312 KB)
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Dead space effect on the wavelength dependence of gain and noise in avalanche photodiodes
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PDF (292 KB)
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Tradeoff between interconnect capacitance and RC delay variations induced by process fluctuations
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PDF (224 KB)
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Two formulations of semiconductor transport equations based on spherical harmonic expansion of the Boltzmann transport equation
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PDF (232 KB)
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Validity and applicability of triangular potential well approximation in modeling of MOS structure inversion and accumulation layer
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PDF (148 KB)
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Effects of NH3-plasma nitridation on the electrical characterizations of low-k hydrogen silsesquioxane with copper interconnects
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PDF (176 KB)
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Improved correlation measurements using voltage and transimpedance amplifiers in low-frequency noise characterization of bipolar transistors
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PDF (260 KB)
Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
