IEEE Circuits and Devices Magazine

Issue 4 • July 2000

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  • Basic engineering circuit analysis [Book Reviews]

    Publication Year: 2000, Page(s): 39
    Request permission for commercial reuse | PDF file iconPDF (126 KB)
    Freely Available from IEEE
  • CMOS data converters for communications [Book Reviews]

    Publication Year: 2000, Page(s):39 - 40
    Request permission for commercial reuse | PDF file iconPDF (217 KB)
    Freely Available from IEEE
  • Filter computer-aided design

    Publication Year: 2000, Page(s):4 - 5
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (276 KB)

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  • The Chip. A methodology for fast SPICE simulation of frequency synthesizers

    Publication Year: 2000, Page(s):10 - 15
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (996 KB)

    Welcome to the Chip! Last year in the January issue of this magazine, the problem of simulating a sigma-delta modulator at the transistor level using SPICE was discussed and a simulation flow presented that could speed up simulation time significantly while keeping the accuracy almost intact. Transistor-level simulation is a must for optimizing the design at the final stages. In this column, we di... View full abstract»

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  • Riding the crest of a new wave in memory [NOVORAM]

    Publication Year: 2000, Page(s):16 - 21
    Cited by:  Papers (15)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1472 KB)

    NOVORAM is a convenient new paradigm that may enable the Moore-law-type progress of semiconductor memory technology to be extended well into the nanoscale, terabit range. However, it still faces the challenges of CMOS-compatible deposition of high-quality, few-nanometer layers of wide-bandgap semiconductors View full abstract»

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  • On the go with SONOS

    Publication Year: 2000, Page(s):22 - 31
    Cited by:  Papers (309)  |  Patents (106)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1976 KB)

    Advancements in scaling gate insulators for MOS transistors permit low-voltage, silicon-oxide-nitride-silicon (SONOS) nonvolatile semiconductor memories (NVSMs) for a wide range of applications. The continued scaling of SONOS devices offers improved performance with a small cell size, single-level polysilicon with low voltage, fast erase/write, improved memory retention, increased endurance, and r... View full abstract»

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Aims & Scope

IEEE Circuits and Devices Magazine (1985-2006) covers the design, implementation, packaging, and manufacture of micro-electronic and photonic devices, circuits and systems

 

This Magazine ceased publication in 2006.

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Meet Our Editors

Editor-in-Chief
Dr. Ronald W. Waynant
r.waynant@ieee.org