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# IEEE Transactions on Electron Devices

## Filter Results

Displaying Results 1 - 25 of 53
• ### Comments on "Determination of Si-SiO/sub 2/ interface trap density by 1/f noise measurements" [with reply]

Publication Year: 1990, Page(s):824 - 826
Cited by:  Papers (4)
| | PDF (271 KB)

For the original article see ibid., vol.35, p.1651-5 (1988). The author comments on the interface state density determined by means of measurements of the 1/f noise at cryogenic temperatures. A suspiciously high density (10/sup 23/ cm/sup -3/ eV/sup -1/) was recently determined by Z. Celik-Butler and T.Y. Hsiang in the above-mentioned paper. It is argued that this value is contradictory to a deter... View full abstract»

• ### Reply to Comments on `Unilateral gain of heterojunction bipolar transistors at microwave frequencies'' '

Publication Year: 1990, Page(s):826 - 827
| | PDF (188 KB)

In reply to comments by H.O. Vickes (ibid., vol.36, p.1861-2, 1989), it is pointed out that the correct equation was used for calculations in a previously published paper by S. Prasad et al. (ibid., vol.35, no.12, p.2288-94, 1988), even though an incorrect equation was given View full abstract»

• ### Transducer for multicolor distinction with ECB mode liquid crystal cell

Publication Year: 1990, Page(s):514 - 518
| | PDF (460 KB)

A small transducer for distinguishing color with high spectral selectivity is proposed. It consists of an Si p-n junction photodiode and a filter consisting of an electrically controlled birefringence (ECB) mode liquid-crystal cell mounted on the photodiode. Since the spectral transmittance of the filter can be electronically tuned by regulating the applied voltage across the liquid-crystal cell, ... View full abstract»

• ### Optimization of RESURF LDMOS transistors: an analytical approach

Publication Year: 1990, Page(s):789 - 796
Cited by:  Papers (63)  |  Patents (12)
| | PDF (656 KB)

The high-voltage behavior of the lateral double-diffused MOS transistor (LDMOST) is investigated using an analytical approach. Expressions for the breakdown voltage of an LDMOST fabricated on both thick and thin epitaxial layers are derived. On the basis of this information, a strategy for the optimization of RESURF LDMOSTs is developed. The accuracy of the analytical expressions is verified by co... View full abstract»

• ### Design and comparison of advanced semiconductor devices using computer experiments: application to APDs and HEMTs

Publication Year: 1990, Page(s):536 - 547
Cited by:  Papers (10)
| | PDF (972 KB)

A computer experimental procedure that is useful for studying the behavior of advanced semiconductor devices that contain nonlinear effects is discussed. The approach draws on previous work in modeling avalanche photodiodes (APDs) and high-electron-mobility transistors (HEMTs) based on an ensemble Monte Carlo model. An overall approach to modeling these devices that emphasizes the built-in control... View full abstract»

• ### Electromigration reliability for a tungsten-filled via hole structure

Publication Year: 1990, Page(s):562 - 568
Cited by:  Papers (23)  |  Patents (7)
| | PDF (680 KB)

Experiments have shown that the electromigration reliability for conventional nonfilled via holes decreases with via hole diameter reduction. Tungsten-filled via hole reliability, however, is independent of the via hole diameter and improves significantly compared with the nonfilled via hole structure. The electromigration failure mechanism for the tungsten-filled via hole structures was investiga... View full abstract»

• ### Oxides grown on textured single-crystal silicon-dependence on process and application of EEPROMs

Publication Year: 1990, Page(s):583 - 590
Cited by:  Papers (18)  |  Patents (92)
| | PDF (680 KB)

The electrical properties of oxides grown on textured single-crystal silicon (TSC oxides) are dependent on the process used to roughen or texture the single-crystal silicon surface. The effects of different processing steps on the I-V, C-V, charge trapping, interface trap generation, and breakdown characteristics of TSC oxides are examined. By choosing a particu... View full abstract»

• ### A theory of multiplication noise

Publication Year: 1990, Page(s):781 - 788
Cited by:  Papers (33)
| | PDF (620 KB)

A general theory of noise in avalanche photodiodes (APDs), photomultipliers, and other cascaded multiplication devices in which ionization is independent of a carrier's history is presented. The theory is based on a composition law that allows the calculation of the gain distribution of a multilayer structure from the known distributions for each layer. The composition law is used to establish som... View full abstract»

• ### MBE-grown (GaIn)P/GaAs heterojunction bipolar transistors exhibiting current gains up to 200

Publication Year: 1990, Page(s):810 - 811
Cited by:  Papers (6)
| | PDF (196 KB)

Lattice-matched Ga0.51In0.49P-GaAs heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy that exhibit small-signal current gains as high as 200 are discussed. This result demonstrates the feasibility of using (InGa)P as an alternative to (AlGa)As in GaAs-based devices View full abstract»

• ### Poisson modeling of ultraconfined AlGaAs-GaAs semiconductor devices with selective doping

Publication Year: 1990, Page(s):821 - 823
Cited by:  Papers (2)
| | PDF (252 KB)

An ultraconfined compound semiconductor device is investigated by using a two-dimensional iterative Poisson solver (TIPS). The device confines electrons into one-dimensional channels through the use of selective doping. The electron confinement is found to be a sensitive function of gate width and implant dose of the selective doping, and it is limited by the lateral straggle of the implantation View full abstract»

• ### Electron velocity saturation in heterostructure field-effect transistors

Publication Year: 1990, Page(s):530 - 535
Cited by:  Papers (8)
| | PDF (476 KB)

Results on gate-length scaling of the performance of enhancement-mode heterostructure field-effect transistors (HFETs) for gate lengths of between 0.4 and 10 μm are reported. The devices studied were fabricated by a self-aligned gate process. Transconductances as large as 534 mS/mm were achieved with 0.4-μm devices. Two types of pseudomorphic AlGaAs/InGaAs/GaAs heterostructure are compared. ... View full abstract»

• ### The importance of contact injection in undoped AlGaAs/GaAs heterostructures

Publication Year: 1990, Page(s):556 - 561
Cited by:  Papers (6)
| | PDF (580 KB)

A two-dimensional finite-difference analysis is used to simulate the current flow and charge distribution in undoped AlGaAs/GaAs MODFET structures called heterostructure insulated-gate field-effect transistors (HIGFETs). How an electron channel can be induced at the AlGaAs/GaAs interface when there is no doped supply layer is studied. The origins of the charge in this channel are studied by compar... View full abstract»

• ### Tungsten plug technology using substitution of W for Si

Publication Year: 1990, Page(s):577 - 582
Cited by:  Papers (8)  |  Patents (1)
| | PDF (672 KB)

Novel W plug technology that is compatible with a conventional poly Si filling has been developed. In this technology, low-pressure chemical vapor deposition (LPCVD) poly Si is embedded in contacts and vias using etchback, and tungsten (W) is substituted for poly Si using Si reduction of WF6. This plug technology has been successfully applied to a 0.6-μm contact and a via filling. Th... View full abstract»

• ### 324×487 Schottky-barrier infrared imager

Publication Year: 1990, Page(s):629 - 635
Cited by:  Papers (6)  |  Patents (6)
| | PDF (912 KB)

A standard TV-compatible PtSi Schottky-barrier infrared imager is described. The imager is a 324×487 element area array and has an electronic shutter function. Although the pixel is 42×21 μm, a large fill factor of 42% is obtained, using a 1.5-μm minimum design rule and a two-level polysilicon layer, and two-level aluminum layer structure. Using face-down bonding technology, it w... View full abstract»

• ### Source and drain resistance studies of short-channel MESFETs using two-dimensional device simulators

Publication Year: 1990, Page(s):775 - 780
Cited by:  Papers (9)
| | PDF (544 KB)

A method for calculating the parasitic source and drain resistances in MESFETs using two-dimensional device simulators is discussed. The source and drain resistances are calculated using the power dissipation and the electron heating in the parasitic resistance regions of the device structure. The parasitic resistances are calculated as a function of both the gate and the drain bias voltages. The ... View full abstract»

• ### A novel CID structure for improved breakdown voltage

Publication Year: 1990, Page(s):611 - 617
Cited by:  Papers (5)
| | PDF (664 KB)

Charge injection devices (CIDs) used as infrared detectors incorporate a field plate between the sensing gate electrodes to serve as a channel stop. Two-dimensional computer simulations indicate that such sensing gate/field plate configurations exhibit an enhanced electric field at the edge of the sensing gate electrode. They further show that the edge field enhancement can be eliminated if the fi... View full abstract»

• ### Current-induced breakdown in p-type collector AlGaAs/GaAs HBTs

Publication Year: 1990, Page(s):807 - 810
Cited by:  Papers (6)
| | PDF (340 KB)

The current-induced breakdown phenomenon, which can occur in p-type collector heterojunction bipolar transistors (HBTs), is described. It is shown that the breakdown voltage across the p-type collector junction of HBTs decreases rapidly with increasing current density. The effects of collector structure, doping concentration, and layer thickness are analyzed View full abstract»

• ### Analysis of the kink effect in MOS transistors

Publication Year: 1990, Page(s):818 - 821
Cited by:  Papers (38)
| | PDF (296 KB)

An analysis of the kink effect in MOS transistors that provides a comprehensive view of the kink effect in bulk silicon MOSFETs and SOI devices is presented. This analysis enables a quantitative description of the excess drain current to be obtained for room and liquid-helium temperatures. In particular, it is found that the kink effect in a MOS transistor can be simply modeled by a body effect View full abstract»

• ### Low-temperature avalanche multiplication in the collector-base junction of advanced n-p-n transistors

Publication Year: 1990, Page(s):762 - 767
Cited by:  Papers (26)
| | PDF (528 KB)

The collector-base junction avalanche in advanced n-p-n transistors in the temperature range of 293 to 83 K is described. The multiplication factor is shown to increase exponentially with decreasing temperature. The dependence decreases with increased collector doping concentration and, for the same device, with increased reverse bias. At a fixed collector bias, it is roughly constant at low curre... View full abstract»

• ### Review of two-stream amplifier performance

Publication Year: 1990, Page(s):870 - 877
Cited by:  Papers (10)
| | PDF (600 KB)

The basic concept of the electron-electron two-stream instability and its application in building a microwave/millimeter-wave amplifier are reviewed from the perspective of the general use of high-frequency devices. A historical review of the relevant literature is presented, with additional discussion of unpublished laboratory notebooks from the US Naval Research Laboratory. A summary of the theo... View full abstract»

• ### Origin and characteristics of alpha-particle-induced permanent junction leakage

Publication Year: 1990, Page(s):730 - 736
Cited by:  Papers (6)
| | PDF (644 KB)

The origin and characteristics of the permanent junction leakage caused by alpha-particle irradiation and its impact on the reliability of DRAM cells are investigated. The following results are obtained. (1) Three types of leakage are important in the alpha-particle-induced junction leakage current: the generation current that is mainly caused by divacancies (VV) induced in p-type substra... View full abstract»

• ### Scaling the silicon bipolar transistor for sub-100-ps ECL circuit operation at liquid nitrogen temperature

Publication Year: 1990, Page(s):680 - 691
Cited by:  Papers (12)  |  Patents (1)
| | PDF (1072 KB)

A two-dimensional device simulator was used to examine the various profile design strategies for silicon bipolar transistors operating at liquid-nitrogen temperatures. Special emphasis was placed on the scaling tradeoffs of these design approaches. It is concluded that a relaxed scaling technique based on the maintenance of constant base Gummel number with a slight decrease in emitter doping level... View full abstract»

• ### Nonlinear theory of quasi-optical gyrotron with an electron beam at an oblique angle

Publication Year: 1990, Page(s):833 - 839
Cited by:  Papers (2)
| | PDF (480 KB)

In the quasi-optical gyrotron with a Fabry-Perot cavity, one can inject the electron beam at an oblique angle with respect to the optical axis of the cavity. This angle has a great influence on the gain mechanism, Doppler frequency shift, and saturation length of interaction. Numerical simulations show that two regimes of operation exist when the angle changes from 0° to 90°. When the angl... View full abstract»

• ### Transport equation approach for heterojunction bipolar transistors

Publication Year: 1990, Page(s):519 - 529
Cited by:  Papers (18)
| | PDF (832 KB)

Transport equations for particle, momentum, and energy densities in two conduction bands are applied to a self-consistent numerical simulation of heterojunction bipolar transistors. Simple formulas for the relaxation frequencies, by which the variation of the conduction band energy and doping concentration in a heterojunction device are easily taken into account, are proposed. The electron transpo... View full abstract»

• ### Physical DMOST modeling for high-voltage IC CAD

Publication Year: 1990, Page(s):797 - 803
Cited by:  Papers (52)
| | PDF (624 KB)

A physical, seminumerical charge-based model for vertical DMOSTs is developed and implemented in SPICE. The model is derived from regional quasi-static analyses of carrier transport which implicitly characterize the device currents and charges and which require numerical solution. Newton-Raphson iterative device solutions are derived within the circuit nodal analysis framework of SPICE. PISCES sim... View full abstract»

## Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy