Electron Device Letters, IEEE
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Issue 2 • Date Feb. 1990
Society Sponsor
Filter Results
Displaying Results 1 - 10 of 10
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Simple gate-to-drain overlapped MOSFETs using poly spacers for high immunity to channel hot-electron degradation
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PDF (391 KB)
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Improvement of hot-electron-induced degradation in MOS capacitors by repeated irradiation-then-anneal treatments
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PDF (223 KB)
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Nonoverlapping super self-aligned device structure for high-performance VLSI
Tzu-Yin Chiu ; Chin, G.M. ; Lau, M.Y. ; Hanson, R.C. ; Morris, M.D. ; Lee, K.F. ; Voshchenkov, A.M. ; Swartz, R.G. ; Archer, V.D. ; Liu, M.T.Y. ; Finegan, S.N. ; Feuer, M.D. |
PDF (266 KB)
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Approximate form of multiplication function for avalanche photodiode including 'dead space'
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PDF (175 KB)
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The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film
Grot, S.A. ; Gildenblat, G.S. ; Hatfield, C.W. ; Wronski, C.R. ; Badzian, A.R. ; Badzian, T. ; Messier, R. |
PDF (308 KB)
Aims & Scope
IEEE Electron Device Letters contains articles related to the theory, design, performance and reliability of electron devices.
Meet Our Editors
Editor-in-Chief
Yuan Taur
University of California at San Diego, ECE
