# IEE Proceedings J - Optoelectronics

## Filter Results

Displaying Results 1 - 15 of 15
• ### Impact ionisation thresholds in silicon and germanium under hydrostatic pressure and strain

Publication Year: 1990, Page(s):79 - 87
Cited by:  Papers (1)
| |PDF (688 KB)

The authors have studied experimentally and theoretically impact ionisation thresholds in the indirect band-gap semiconductors, silicon and germanium. The threshold energies for electron- and hole-initiated ionisation processes were calculated numerically using an empirical pseudopotential band-structure which includes spin-orbit interactions. In silicon, the threshold energy for holes is signific... View full abstract»

• ### Reliability of mesa and planar InGaAs PIN photodiodes

Publication Year: 1990, Page(s):74 - 78
Cited by:  Papers (14)  |  Patents (1)
| |PDF (368 KB)

InGaAs planar-structure PIN photodiodes fabricated from MOVPE material have been demonstrated to have outstanding reliability. The predicted random failure rate at 20°C is less than 0.3 FITs, and the mean time to failure is estimated to be 1011 hours at 20°C. By contrast, the reliability of mesa-structure photodiodes is unacceptable because of an instability of the dark current.... View full abstract»

• ### Large-signal modulation response of monolithic active integrated-optic waveguides

Publication Year: 1990, Page(s):11 - 20
| |PDF (744 KB)

A large-signal dynamic travelling optical flux analysis of a GaAs/AlGaAs monolithic active integrated-optic waveguide (AIOW) is presented. The model uses a combination of numerical and analytical techniques to solve the photon flux and carrier density conservation equations in time, the longitudinal dimension and optical wavelength. An analysis of the fundamental and harmonic frequency response of... View full abstract»

• ### Influence of gain nonlinearities on the linewidth enhancement factor in semiconductor lasers

Publication Year: 1990, Page(s):30 - 32
Cited by:  Papers (3)
| |PDF (228 KB)

Nonlinear gain saturation is shown to result in a power dependence of the linewidth enhancement factor. This can explain a linewidth rebroadening or saturation at high power levels in semiconductor lasers, even if no side modes are considered View full abstract»

• ### Semiconductor Raman laser as a tool for wideband optical communications

Publication Year: 1990, Page(s):43 - 48
| |PDF (520 KB)

The authors describe the fundamental properties of the GaP-AlxGa1-xP heterostructure used for the semiconductor Raman laser and the low threshold operation of the buried heterostructure Raman laser, together with the first demonstration of lasing by a new structure having a layer with an intermediate refractive index for pump power introduction, which reduces the loss for the... View full abstract»

• ### Fabrication and lasing characteristics of λ=1.56 μm tunable twin-guide (TTG) DFB lasers

Publication Year: 1990, Page(s):69 - 73
Cited by:  Papers (4)  |  Patents (9)
| |PDF (488 KB)

The operation principle and fabrication process of the tunable twin-guide (TTG) DFB laser diode are presented. The TTG-DFB laser is a novel single-frequency tunable laser which needs only a single control current for a wide continuous tuning range. Very low CW threshold currents of 12-18 mA at room temperature, spectral linewidths as low as 20-30 MHz, and a continuous tuning range of 1.5 nm at a t... View full abstract»

• ### Reliable 1.3 μm high speed trenched buried heterostructure lasers grown entirely by atmospheric MOVPE

Publication Year: 1990, Page(s):2 - 6
Cited by:  Papers (3)
| |PDF (356 KB)

The authors report on reliable high-power wide-bandwidth 1.3 μm trenched buried heterostructure (TBH) lasers grown by atmospheric MOVPE. The devices have bandwidths of up to 11 GHz and maintain excellent CW performance and long lifetimes. Data are presented for all of the above parameters, along with a discussion of the design considerations of the device structure View full abstract»

• ### Analysis of the spectral index method for vector modes of rib waveguides

Publication Year: 1990, Page(s):21 - 26
Cited by:  Papers (13)
| |PDF (452 KB)

The spectral index method is a new and simple way of finding quickly and easily the guided modes and propagation constants of semiconductor rib waveguides. Here, the method itself is analysed, and its accuracy as compared with finite-difference results is confirmed. Even in its simplest form, the method produces accurate propagation constants and E or H field profiles using littl... View full abstract»

• ### 1.3/1.53 μm Mach-Zehnder wavelength duplexers for integrated optoelectronic transceiver modules

Publication Year: 1990, Page(s):33 - 38
Cited by:  Papers (3)
| |PDF (460 KB)

The authors discuss the design of Mach-Zehnder wavelength duplexers for 1300 nm and 1530 nm band-centres using InGaAsP/InP strip-loaded waveguides. They show that this device has a high inherent tolerance to fabrication and waveguide parameter variation and is therefore particularly suitable for dead-reckoned' fabrication in a low-cost optoelectronic transceiver chip for local area fibre networks... View full abstract»

• ### Fast polarisation and wavelength switching in quasi-index guided GaInAsP twin-stripe lasers by direct current modulation

Publication Year: 1990, Page(s):49 - 54
Cited by:  Papers (2)
| |PDF (520 KB)

Current-controlled polarisation and wavelength switching in 1.3 μm GaInAsP ridge-wavelength twin-stripe (RWTS) lasers with a properly designed effective index profile is reported. In CW operation at room temperature, an output power of 4 mW can be switched from TM- to TE-polarisation with an extinction ratio of 15 dB by a control current of only 4 mA. The polarisation switching is accompanied b... View full abstract»

• ### Spectral index method applied to rib and strip-loaded directional couplers

Publication Year: 1990, Page(s):7 - 10
Cited by:  Papers (2)
| |PDF (268 KB)

The spectral index method is applied to both rib and strip-loaded directional couplers, both of which are widely used in optoelectronics. Analytical transcendental equations are constructed in terms of the polarised propagation constant β for the fundamental symmetric and antisymmetric modes. Excellent agreement with large scale mainframe programs is achieved for the calculated coupling lengt... View full abstract»

• ### Advances in rib waveguide analysis using the weighted index method or the method of moments

Publication Year: 1990, Page(s):27 - 29
Cited by:  Papers (2)
| |PDF (240 KB)

The concept of effective widths is shown to lead, in principle, to a theory for the upper lower version of the weighted index method. By applying the method of moments' to the scalar wave equation (quasi-TE mode), a basis is provided for procedures which previously relied on physical intuition. Numerical solutions are compared with the effective, weighted, upper lower and spectral index methods. ... View full abstract»

• ### Modified 1.3 μm buried ridge stripe laser for implanted-FET integration

Publication Year: 1990, Page(s):39 - 42
| |PDF (432 KB)

The buried-ridge stripe (BRS) laser has been modified for integration purposes. Adapting the laser to a quasi-planar configuration on the semi-insulating substrate, the authors report on an important improvement of the integrable BRS laser characteristics as compared with previously published ones. Also, the technology for this modified structure is shown to be compatible with the implanted transi... View full abstract»

• ### Circuit theory of laser diode modulation and noise

Publication Year: 1990, Page(s):55 - 63
| |PDF (772 KB)

The circuit theory of laser diode modulation and noise is based only on the energy and electron-number conservation laws, and on the well known expression hv(Gb+Ga) for the spectral density of Nyquist noise currents. The conductances G b and Ga represent stimulated absorption and stimulated emission, respectiv... View full abstract»

• ### Spectral gain measurements for semiconductor laser diodes

Publication Year: 1990, Page(s):64 - 68
Cited by:  Papers (3)
| |PDF (280 KB)

Spectral gain studies were carried out for two different laser diode structures from the recordings of Fabry-Perot modes. The Cassidy method was found to be superior to other methods for determining gain and for application even at laser threshold. Maximum gain versus current values were derived for both AlGaAs/GaAs and InGaAsP/InP lasers, and showed good agreement with published theoretical value... View full abstract»

## Aims & Scope

Published from 1985-1993, IEE Proceedings J contained significant and original contributions on optoelectronics, including: optical and optoelectronic materials; light sources; optical modulation and multiplexing; optical fibres, cables and connectors; optical amplifiers; photodetectors and optical receivers; photonic integrated circuits; nanophotonics and photonic crystals; optical signal processing; holography; and displays.

Full Aims & Scope