Electron Device Letters, IEEE
Issue 8 • Date Aug. 1999
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Displaying Results 1 - 17 of 17
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A comparison of hydrogen and deuterium plasma treatment effects on polysilicon TFT performance and dc reliability
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PDF (54 KB)
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Effect of substrate bias on the performance and reliability of the split-gate source-side injected flash memory
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PDF (76 KB)
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High field effect mobility deuterated amorphous silicon thin-film transistors based on the substitution of hydrogen with deuterium
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PDF (135 KB)
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Dependence of Si pn junction perimeter leakage on the channel-stop boron dose and interlayer material
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PDF (54 KB)
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A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition
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PDF (88 KB)
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1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance
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PDF (702 KB)
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Aims & Scope
IEEE Electron Device Letters contains articles related to the theory, design, performance and reliability of electron devices.
Meet Our Editors
Editor-in-Chief
Yuan Taur
University of California at San Diego, ECE
