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Electron Device Letters, IEEE

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Electron Device Letters, IEEE

Issue 7 • Date July 1999

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Stress-induced leakage current in p/sup +/ poly MOS capacitors with poly-Si and poly-Si/sub 0.7/Ge/sub 0.3/ gate material

A new approach to analyze the degradation and breakdown of thin SiO₂ films under static and dynamic electrical stress

Improved electrical characteristics of CoSi₂ using HF-vapor pretreatment

An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHz

Emitter-ballasting-resistor-free SiGe microwave power heterojunction bipolar transistor

Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities

Polysilicon thin-film transistors using self-aligned cobalt and nickel silicide source and drain contacts

Electrical characteristics of new LDD poly-Si TFT structure tolerant to process misalignment

Enhanced mobility PMOSFETs using tensile-strained Si/sub 1-y/C_y layers

Low-leakage germanium-seeded laterally-crystallized single-grain 100-nm TFTs for vertical integration applications

An analytical approximation for the excess noise factor of avalanche photodiodes with dead space

Various effects of silicidation on shallow p/sup +/ junctions formed by BF/sub 2//sup +/ implantation into thin poly-Si films on Si substrates

An 0.35-μm, 6-m/spl Omega/, 43 μ/spl Omega/-cm^{sub 2} lateral power MOSFET for low-voltage, megahertz switching power applications

A novel 6H-SiC power DMOSFET with implanted p-well spacer

Channeling of low-energy implanted ions through the poly-Si gate

A novel cross-coupled inter-poly-oxide capacitor for mixed-mode CMOS processes

Through-the-gate-implanted ultrathin gate oxide MOSFET's with corner parasitics-free shallow-trench-isolation

Drivability improvement on deep-submicron MOSFETs by elevation of source/drain regions

Double-doped In/sub 0.35/Al/sub 0.65/As/In/sub 0.35/Ga/sub 0.65/As power heterojunction FET on GaAs substrate with 1 W output power

Electroluminescence analysis of HFET's breakdown

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