By Topic

Electron Device Letters, IEEE

Issue 6 • Date June 1998

Filter Results

Displaying Results 1 - 11 of 11
  • Electrical leakage at low-K polyimide/TEOS interface

    Publication Year: 1998 , Page(s): 177 - 179
    Cited by:  Papers (11)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (81 KB)  

    The effect of low-K polymer passivation on electrical leakage was investigated to evaluate the reliability of polymer integration on device wafers. Polyimide passivation over Al(0.5% Cu) interconnects inlaid in TEOS increases the intralevel leakage current mainly along the polyimide/TEOS interface. Moisture absorbed in the polyimide further increases the inter facial as well as bulk leakages. These findings emphasize the importance of separating interconnects from direct contact with polyimide/TEOS interfaces to alleviate electrical isolation problems in multilevel interconnect architecture that employs low-K polymer dielectrics. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Self-aligned gate and source drain contacts in inverted-staggered a-Si:H thin-film transistors fabricated using selective area silicon PECVD

    Publication Year: 1998 , Page(s): 180 - 182
    Cited by:  Papers (6)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (53 KB)  

    This article demonstrates full self-aligned inverted-staggered amorphous silicon thin-film transistors (TFT's) fabricated using selective plasma deposition of doped microcrystalline silicon source/drain contacts. Back-side exposure, using the bottom metal gate as the mask, produced the self-aligned contact openings. Selective deposition of the n+ silicon contact layer assures self-aligned ion resistance contacts and eliminates the need for reactive ion etching of the n+ silicon. Complete TFT fabrication requires no critical alignment steps. Transistors have linear mobility between 0.6 and 1.1 cm/sup 2//Vs, threshold voltage of 3.0 V, and sub-threshold slope of 0.35 V/decade. The OFF current is <10/sup -11/ A with -10 V gate voltage and 10 V between the source and drain, and ON/OFF ratios exceed 10. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A novel two-step etching to suppress the charging damages during metal etching employing helicon wave plasma

    Publication Year: 1998 , Page(s): 183 - 185
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (34 KB)  

    A two-step etching has been performed to eliminate the plasma charging damages during helicon-wave plasma metal etching without selectivity loss. This technique utilized a normal etching recipe to remove the Al film followed by an optimized etching recipe for the overetching step. By increasing the bias power and decreasing the source power, the optimum etching recipe can target the plasma more directionally and reduce the Al charging damages. Eventually, the damage mechanism was also reported. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Microdischarge in microbridge plasma display with holes in the cathode

    Publication Year: 1998 , Page(s): 186 - 188
    Cited by:  Papers (7)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (55 KB)  

    A new microbridge plasma display structure with holes in the cathode has been fabricated and operated at high gas pressure (400-700 Torr). With a hole diameter of 100 μm, the slope of the I-V curve in the discharge cell of the new structure is positive at 700 Torr. It is found that the discharge in this new structure has about 100 kohm internal resistance, and the discharges are stable when operated without current limiting resistors. The operating current in the new structure is about 50 μA with smaller 75 μm diameter holes in the cathode. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A high sensitivity lead-titanate (PbTiO3) pyroelectric thin-film infrared sensor with temperature isolation improvement structure

    Publication Year: 1998 , Page(s): 189 - 191
    Cited by:  Papers (9)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (65 KB)  

    An infrared (IR) sensor with the lead-titanate (PbTiO3) thin-film using the technology of micro-electromechanical system to achieve a better thermal isolation structure has been fabricated and developed, The major IR-sensing part on the cantilever beam with dimensions of 200×100×2 μm3 consists of a 500 /spl Aring/ PbTiO3 layer deposited by RF sputtering, and an evaporated bismuth (Bi) layer. This thermal isolation improved structure exhibits a much superior performance to that of a traditional IR-sensing bulk structure on the experimental results, which show a 200% and 300% improvement in current gain under the incident optical power 500 μW and 6 V applied bias at room temperature and 77 K, respectively,. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A novel self-aligned bidirectional MIM diode with transparent junctions for AM-LCD's

    Publication Year: 1998 , Page(s): 192 - 194
    Cited by:  Papers (2)  |  Patents (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (70 KB)  

    A novel self-aligned bidirectional Metal-Insulator-Metal (MIM) diode with transparent junctions is proposed and fabricated. The MIM diode is formed by a combination of Ta/TaO/sub x//ITO/TaO/sub x//Ta. In this structure, both symmetrical and shift-free I-V characteristics are obtained. The symmetrical I-V characteristics are attributed to the excellent symmetry in the diode structure. The significant reduction of the shift in the I-V characteristics is a result of the removal of the charges captured by the traps in the TaO/sub x/ layers and at the interfaces between the TaO, and the electrodes during electrical stress. Only three masks are needed for the fabrication of the MIM diode pixel, which is as simple as the conventional approach. Moreover, the adoption of the lateral junction approach in the structure makes it possible to be used for high density MIM matrix implementation over large area substrates without the need of high-resolution patterning techniques. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • High-breakdown characteristics of the InP-based heterostructure field-effect transistor with In/sub 0.34/Al/sub 0.66/As/sub 0.85/Sb/sub 0.15/ Schottky layer

    Publication Year: 1998 , Page(s): 195 - 197
    Cited by:  Papers (6)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (96 KB)  

    We report improved breakdown characteristics of InP-based heterostructure field-effect transistors (HFET's) utilizing In/sub 0.34/Al/sub 0.66/As/sub 0.85/Sb/sub 0.15/ Schottky layer grown by low-pressure metalorganic chemical vapor deposition. Due to high energy bandgap and high Schottky barrier height (>0.73 eV) of the In/sub 0.34/Al/sub 0.66/As/sub 0.85/Sb/sub 0.15/ Schottky layer, high two-terminal gate-to-drain breakdown voltage of 40 V, three-terminal off-state breakdown voltage of 40 V three-terminal threshold-state breakdown voltage of 31 V, and three-terminal on-state breakdown voltage of 18 V at 300 K for In/sub 0.75/Ga/sub 0.25/As channel, are achieved. Moreover, the temperature dependence of two-terminal reverse leakage current is also investigated. The two-terminal gate-to-drain breakdown voltage is up to 36 V at 420 K. A maximum extrinsic transconductance of 216 mS/mm is obtained with a gate length of 1.5 μm. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • High-power 10-GHz operation of AlGaN HFET's on insulating SiC

    Publication Year: 1998 , Page(s): 198 - 200
    Cited by:  Papers (70)  |  Patents (52)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (44 KB)  

    We report the first high-power RF characterization of AlGaN HFET's fabricated on electrically insulating SiC substrates. A record total power of 2.3 W at 10 GHz was measured from a 1280-μm wide HFET at V/sub ds/=33 V. An excellent RF power density of 2.8 W/mm was measured on a 320-μm wide HFET. These values are a result of the high thermal conductivity of SiC, relative to the typical substrate, sapphire. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A simplified impact ionization model based on the average energy of hot-electron subpopulation

    Publication Year: 1998 , Page(s): 201 - 203
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (122 KB)  

    A previously developed nonlocal impact ionization model based on the average energy of hot-electron subpopulation has been further simplified. The system of hydrodynamic transport equations consisting of three equations for these high-energy electrons has been reduced to a single equation. The simulation results for n/sup +/-n-n/sup +/ structures are in good agreement with Monte Carlo (MC) calculations. The model is easily applicable to two-dimensional (2-D) problems by exploiting the current flow line approach. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Metal-ferroelectric-semiconductor (MFS) FET's using LiNbO/sub 3//Si

    Publication Year: 1998 , Page(s): 204 - 206
    Cited by:  Papers (13)  |  Patents (7)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (62 KB)  

    N-channel metal-ferroelectric-semiconductor field-effect-transistors (MFSFET's) by using rapid thermal annealed LiNbO/sub 3//Si View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Tunneling leakage current in oxynitride: dependence on oxygen/nitrogen content

    Publication Year: 1998 , Page(s): 207 - 209
    Cited by:  Papers (78)  |  Patents (11)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (71 KB)  

    It is widely known that the addition of nitrogen in silicon oxide, or the addition of oxygen in silicon nitride, affects its reliability as a gate dielectric. The authors examine the gate leakage current as a function of the oxygen and nitrogen contents in ultrathin silicon oxynitride films on Si substrates. It is shown that, provided that electron tunneling is the dominant current conduction mechanism, the gate leakage current in the direct tunneling regime increases monotonically with the oxygen content for a given equivalent oxide thickness (EOT), such that pure silicon nitride passes the least amount of current while pure silicon oxide is the leakiest. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.

Aims & Scope

IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron devices.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Amitava Chatterjee