Electron Devices, IEEE Transactions on
Issue 4 • Date Apr 1998
Society Sponsor
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Displaying Results 1 - 25 of 36
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Suppressing the parasitic bipolar action in fully-depleted MOSFETs/SIMOX by using back-side bias-temperature treatment
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PDF (128 KB)
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Simulation and measurement of multiplication in thin-film electroluminescent devices with doped probe layers
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PDF (304 KB)
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Characterization of polysilicon oxides thermally grown and deposited on the polished polysilicon films
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PDF (204 KB)
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Planarized multilevel interconnection using chemical mechanical polishing of selective CVD-Al via plugs
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PDF (184 KB)
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Two-dimensional numerical simulation of Schottky barrier MOSFET with channel length to 10 nm
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PDF (232 KB)
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Full-band Monte Carlo investigation of hot carrier trends in the scaling of metal-oxide-semiconductor field-effect transistors
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PDF (176 KB)
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Development of a novel image intensifier of an amplified metal-oxide semiconductor imager overlaid with electron-bombarded amorphous silicon
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PDF (156 KB)
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A 0.1-μm delta-doped MOSFET fabricated with post-low-energy implanting selective epitaxy
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PDF (196 KB)
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Analysis on accuracy of charge-pumping measurement with gate sawtooth pulses [MOSFETs]
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PDF (208 KB)
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Lateral SCR devices with low-voltage high-current triggering characteristics for output ESD protection in submicron CMOS technology
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PDF (304 KB)
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Design and benchmarking of BCPMOS versus SCPMOS for an evolutionary 0.25-μm CMOS technology
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PDF (92 KB)
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The relation between luminous properties and oxygen content in ZnS:TbOF thin-film electroluminescent devices fabricated by radio-frequency magnetron sputtering method
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PDF (120 KB)
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Trapped charge distributions in thin (10 nm) SiO2 films subjected to static and dynamic stresses
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PDF (124 KB)
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High-performance thin-film transistors fabricated using excimer laser processing and grain engineering
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PDF (164 KB)
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Verification of electron distributions in silicon by means of hot carrier luminescence measurements
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PDF (188 KB)
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New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
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PDF (188 KB)
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An analytical fully-depleted SOI MOSFET model considering the effects of self-heating and source/drain resistance
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PDF (220 KB)
Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
