Electron Devices, IEEE Transactions on
Issue 2 • Date Feb 1998
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Displaying Results 1 - 25 of 32
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A compact velocity-overshoot model for deep-submicron bipolar devices considering energy transport
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PDF (224 KB)
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Improved equivalent circuit and analytical model for amorphous silicon solar cells and modules
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PDF (208 KB)
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Stress-induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics
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PDF (132 KB)
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Simulation of temperature cycling effects on electromigration behavior under pulsed current stress [VLSI metallization]
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PDF (188 KB)
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Correlation of stress-induced leakage current with generated positive trapped charges for ultrathin gate oxide
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PDF (100 KB)
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A comparison of the performance and reliability of wet-etched and dry-etched a-Si:H TFTs
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PDF (196 KB)
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Numerical examination of silicon avalanche photodiodes operated in charge storage mode
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PDF (108 KB)
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Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT's
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PDF (180 KB)
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Room temperature photocurrent spectroscopy of SiGe/Si p-i-n photodiodes grown by selective epitaxy
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PDF (128 KB)
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An improved technique and experimental results for the extraction of electron and hole mobilities in MOS accumulation layers
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PDF (280 KB)
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A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown
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PDF (312 KB)
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Numerical and experimental characterization of single- and double-gate race-track-shaped field emitter structures
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PDF (152 KB)
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InGaAs-Schottky contacts made by in situ plated and evaporated Pt-an analysis based on DC and noise characteristics
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PDF (528 KB)
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Correlation between hot-carrier-induced interface states and GIDL current increase in n-MOSFET's
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PDF (216 KB)
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Three-dimensional base distributed effects of long stripe BJT's: base resistance at DC
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PDF (332 KB)
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Evaluation of the valence band discontinuity of Si/Si1-xGex/Si heterostructures by application of admittance spectroscopy to MOS capacitors
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PDF (256 KB)
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Multiple negative-differential-resistance (MNDR) phenomena of a metal-insulator-semiconductor-insulator-metal (MISIM)-like structure with step-compositioned InxGa1-xAs quantum wells
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PDF (168 KB)
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Influence of asymmetric/symmetric source/drain region on asymmetry and mismatch of CMOSFET's and circuit performance
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PDF (352 KB)
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Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
