Issue 12 • Date Dec. 1997
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Displaying Results 1 - 17 of 17
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Correlation between lifetime, temperature, and electrical stress for gate oxide lifetime testing
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PDF (105 KB)
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Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices
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PDF (115 KB)
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1.1 kV 4H-SiC power UMOSFETs
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PDF (103 KB)
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Diamond grit-based field emission cathodes
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PDF (102 KB)
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Integration of organic LEDs and amorphous Si TFTs onto flexible and lightweight metal foil substrates
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PDF (78 KB)
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Positive temperature dependence of the electron impact ionization coefficient in In/sub 0.53/Ga/sub 0.47/As/InP HBTs
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PDF (83 KB)
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1997 Index
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PDF (1157 KB)
Aims & Scope
IEEE Electron Device Letters contains articles related to the theory, design, performance and reliability of electron devices.
Meet Our Editors
Editor-in-Chief
Yuan Taur
University of California at San Diego, ECE


