Issue 7 • Date Jul 1989
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Simulation of circular silicon pressure sensors with a center boss for very low pressure measurement
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PDF (528 KB)
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Integrated multi-biosensors based on an ion-sensitive field-effect transistor using photolithographic techniques
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PDF (664 KB)
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Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation
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PDF (1548 KB)
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An assessment of approximate nonstationary charge transport models used for GaAs device modeling
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PDF (840 KB)
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Avalanche multiplication in a compact bipolar transistor model for circuit simulation
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PDF (388 KB)
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A comparison of the GaAs MESFET and the AlGaAs/GaAs heterojunction bipolar transistor for power microwave amplification
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PDF (496 KB)
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Theoretical analysis of an Al0.15Ga0.85As/In 0.15Ga0.85As pseudomorphic HEMT using an ensemble Monte Carlo simulation
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PDF (896 KB)
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A 20-ps Si bipolar IC using advanced super self-aligned process technology with collector ion implantation
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PDF (516 KB)
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Characterization of alloyed AuGe/Ni/Au ohmic contacts to n-doped GaAs by measurement of transfer length and under the contact sheet resistance
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PDF (428 KB)
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The superlinearity of the short-circuit current of low-resistivity-concentration solar cells
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PDF (780 KB)
Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology


