Electron Devices, IEEE Transactions on
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Issue 6 • Date Jun 1997
Society Sponsor
Filter Results
Title History
Displaying Results 1 - 17 of 17
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Identification of stress-induced leakage current components and the corresponding trap models in SiO2 films
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PDF (184 KB)
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Total dose effects on a fully-depleted SOI NMOSFET and its lateral parasitic transistor
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PDF (180 KB)
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Plasma electron density generated by a semiconductor bridge as a function of input energy and land material
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PDF (128 KB)
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The effect of externally imposed mechanical stress on the hot-carrier-induced degradation of deep-sub micron nMOSFET's
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PDF (260 KB)
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A quantitative analysis of time-decay reproducible stress-induced leakage current in SiO2 films
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PDF (208 KB)
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Analysis of emitter efficiency enhancement induced by residual stress for in situ phosphorus-doped polysilicon emitter transistors
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PDF (244 KB)
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LDD design tradeoffs for single transistor latch-up and hot carrier degradation control in accumulation mode FD SOI MOSFET's
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PDF (192 KB)
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Base-collector leakage currents in InP/InGaAs double heterojunction bipolar transistors
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PDF (160 KB)
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Reduction of leakage current in chemical-vapor-deposited Ta2 O5 thin films by furnace N2O annealing
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PDF (96 KB)
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Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
