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IEE Proceedings - Circuits, Devices and Systems

Issue 1 • Date Feb 1997

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Displaying Results 1 - 10 of 10
  • IC compatible planar inductors on silicon

    Publication Year: 1997, Page(s):29 - 35
    Cited by:  Papers (24)  |  Patents (23)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (688 KB)

    The authors present a systematic study of the modelling, design, and fabrication of planar spiral inductors implemented in a high speed 0.8 μm BiCMOS technology, and characterised for use in portable VHF applications, Both a fully empirical distributed equivalent circuit model and a more accurate semiempirical model for the integrated inductors have been developed and tested. The latter broadba... View full abstract»

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  • Finding all DC solutions of nonlinear resistive circuits by exploring both polyhedral and rectangular circuits

    Publication Year: 1997, Page(s):17 - 21
    Cited by:  Papers (9)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (492 KB)

    A new fast method for finding all the DC solutions of piecewise-linear (PWL) resistive circuits is presented. The structure of the algorithm is based on the exploration of a binary tree: each node represents a specific PWLsub circuit, derived from the original PWL circuit by truncating the original PWL characteristics. The terminal nodes of the tree represent the linear circuits related to single ... View full abstract»

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  • New results on the resistance of an n-cube

    Publication Year: 1997, Page(s):51 - 52
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (136 KB)

    The resistance of the port in an n-cube which is formed by two vertices of distance n-1 is exactly formulated for any positive integer n View full abstract»

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  • Assessing and comparing fault coverage when testing analogue circuits

    Publication Year: 1997, Page(s):1 - 4
    Cited by:  Papers (4)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (436 KB)

    A new technique for calculating fault coverage when testing analogue circuits is presented. The fault models employed for individual circuit components relate to the importance of those components to overall circuit functionality and therefore permit benchmark assessments and comparisons of fault coverage for different devices, test techniques and test programs. The application of this principle t... View full abstract»

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  • Thermal design of gallium arsenide MESFETs for microwave power amplifiers

    Publication Year: 1997, Page(s):45 - 50
    Cited by:  Papers (6)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (800 KB)

    In the traditional design of microwave power amplifiers using gallium arsenide field effect transistors, the active devices are mounted onto a thermally conducting heatsink, and matching circuits at the input and output take the form of microstrip, usually using aluminium oxide as the dielectric. The thermal attachment of the transistor is often a problem with this technology and the use of many b... View full abstract»

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  • Class-AB SiC CMOS power opamp with stable voltage gain over wide temperature range

    Publication Year: 1997, Page(s):22 - 28
    Cited by:  Papers (5)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (600 KB)

    A class-AB silicon carbide CMOS power operational amplifier with stable open-loop voltage gain over a wide temperature range is presented. A temperature-insensitive voltage reference is designed to provide bias voltages for the operational amplifier. An extra bias circuit is also developed such that the voltage gain of the operational amplifier can be insensitive to threshold voltage and mobility ... View full abstract»

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  • Space charge induced variation in silicon double drift IMPATT diode parameters

    Publication Year: 1997, Page(s):36 - 39
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (416 KB)

    The effect of space charge on the space charge region (SCR) width, diode voltage and the maximum field in Si double drift IMPATT diode is studied under the operating conditions for various current and doping densities. The rate of increase in SCR width and diode voltage with current density depends appreciably on majority carriers' space charge. The simple analytical expression for the variation o... View full abstract»

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  • Noise analysis for high-order active filters

    Publication Year: 1997, Page(s):11 - 16
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (512 KB)

    Various high-order realisations of continuous-time active filters are put into perspective before a generalised noise analysis is conducted. This removes previous restrictions and its results are confirmed by experiment. A set of rules is developed enabling design of cascade structures for minimum output noise. The performances of various multiple-loop structures are also evaluated and compared View full abstract»

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  • Parallel logic simulation with assignable delays on a vector multiprocessor computer

    Publication Year: 1997, Page(s):5 - 10
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (572 KB)

    The author presents a gate level high speed VLSI logic simulation algorithm with an assignable delay that uses bitwise logic operations, together with the segmented waveform relaxation method. Although the proposed technique has some similarity to the compiled code method, it does not generate a compiled code and can handle different delay models, a feature that the conventional compiled code meth... View full abstract»

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  • GaAs MESFET large-signal modelling for multiport Volterra series analysis

    Publication Year: 1997, Page(s):40 - 44
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (484 KB)

    A new large-signal model of a GaAs MESFET suitable for Volterra series analysis is developed. The nonlinear model includes 14 linear and five two-dimensional nonlinear elements. An offset model is introduced which significantly improves the convergence of the Volterra series. The model is verified through comparison with nonlinear two-tone measurements. Good agreement is obtained for input levels ... View full abstract»

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