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Optoelectronics, IEE Proceedings -

Issue 5 • Date Oct 1996

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Displaying Results 1 - 12 of 12
  • Guided-wave optics in silicon-on-insulator technology

    Publication Year: 1996 , Page(s): 307 - 311
    Cited by:  Papers (7)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (1000 KB)  

    Silicon-on-insulator (SOI) technology offers tremendous potential for the integration of optoelectronic functions on a silicon substrate. The authors have demonstrated integrated 3 dB optical directional couplers, a 5×9 star coupler, and a Mach-Zehnder wavelength demultiplexer using SOI rib waveguides. These devices show excellent performance characteristics and represent key components for the realisation of monolithic optoelectronic circuits in a silicon IC-compatible technology View full abstract»

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  • Silica-based sol-gel optical waveguides on silicon

    Publication Year: 1996 , Page(s): 287 - 292
    Cited by:  Papers (3)  |  Patents (2)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (660 KB)  

    Silica-based waveguiding layers readily obtained by the spin-coating appropriate sols on silicon wafers. They easily be doped with rare earth elements, intended applications such as lasers or amplifiers. The authors describe the preparation and characterisation of such films. The film structure was investigated by X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopies (NEXAFS and EXAFS) and Fourier transform infrared spectroscopy (FTIR). Their surface area, evaluated by Brunauer-Emmett-Teller (BET) analysis, and their porosity, estimated from refractive index measurements, are reported. Finally, rare earth fluorescence lifetime data are presented and interpreted View full abstract»

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  • Development of a library of low-loss silicon-on-insulator optoelectronic devices

    Publication Year: 1996 , Page(s): 312 - 315
    Cited by:  Papers (1)  |  Patents (7)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (440 KB)  

    Established silicon microelectronics fabrication methods can be exploited to fabricate low-loss silicon integrated optical devices of dimensions which are compatible with single mode fibres and operate at the important wavelengths of 1.3 and 1.5 μm. Recent advances at the University of Surrey, where research effort in this field has been to develop a library of optoelectronic components, is highlighted. So far, rib and planar waveguides, including bends and Y-junctions, have been produced, together with design and fabrication of efficient optical modulators based on the plasma dispersion effect. Within the experimental error, the waveguide losses are indistinguishable from the intrinsic absorption loss of pure silicon. The figure of merit for the modulators is greater than 200°/V/mm and the operating current is 7 mA, which improves on previous devices by approximately an order of magnitude View full abstract»

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  • Channel waveguides formed in fused silica and silica-on-silicon by Si, P and Ge ion implantation

    Publication Year: 1996 , Page(s): 281 - 286
    Cited by:  Papers (1)  |  Patents (2)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (528 KB)  

    Low-loss channel waveguides have been formed in substrates of fused silica and silica-on-silicon by the implantation of 5 MeV Si, P and Ge ions. The silica-on-silicon substrates comprised an upper core layer which was doped with either 3 or 7% Ge. Annealing of the silica-on-silicon waveguides has defined a narrow range of temperature (500-600°C) over which the loss coefficient α was at a minimum of 0.10-0.20 dB/cm at wavelengths of λ=1300 and 1550 nm. For the fused-silica substrates a similar minimum loss (0.10-0.20 dB/cm) was measured at 1300 nm. However, at λ=1550 nm the value of α was significantly greater because of an absorption edge in the fused silica (Suprasil-2) at 1500 nm. The results show that the optical loss characteristics of the waveguides were essentially independent of the ion species View full abstract»

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  • Genesis of silicon-based guided-wave optics

    Publication Year: 1996
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (92 KB)  

    The author describes the events leading to the first realisation of an optical waveguide on a silicon substrate View full abstract»

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  • Hybrid integration onto silicon motherboards with planar silica waveguides

    Publication Year: 1996 , Page(s): 316 - 321
    Cited by:  Papers (7)  |  Patents (16)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (852 KB)  

    Silicon micromachining can be used in conjunction with silica on silicon waveguide technology to fabricate hybrid optical motherboards. These motherboards comprise optical and electrical interconnects, alignment features for integration of optoelectronic components and electronic circuitry. The development of the principal building blocks of an optical motherboard, and the fabrication of a hybrid integrated optical transceiver, are described View full abstract»

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  • Silica-based optical integrated circuits

    Publication Year: 1996 , Page(s): 263 - 280
    Cited by:  Papers (35)  |  Patents (40)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (2484 KB)  

    Silica-based integrated optical waveguide technology is reviewed. Low loss and manufacturable waveguides are made by chemical vapour, flame hydrolysis and electron beam deposition. Fibre to fibre insertion loss is as low as 0.3 dB for a 6 cm long waveguide. Bragg reflective add-drop filters are made with gratings formed by ultraviolet irradiation. The waveguide grating router has found important application as a multiplexer in dense wavelength multiplexed communications systems. Multiplexers with wide pass bands and stop bands are made with Fourier filters: these filters consist of a chain of alternating couplers and delaying arms. The good performance of waveguide grating routers and Fourier filters is due to the high degree of path delay and coupler control achievable by and processing in this technology View full abstract»

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  • Acousto-optic Bragg diffraction in SiGe/Si planar waveguides

    Publication Year: 1996 , Page(s): 303 - 306
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (396 KB)  

    The interaction of guided optical waves and surface acoustic waves (SAWs) in SiGe/Si planar waveguide structures is studied by first determining the electric field profile of the optical modes and the strain profiles induced by the propagating SAW. Coupled-mode theory provides the basis for the study of the acousto-optic interaction and results in the determination of diffraction efficiency as a function of acoustic frequency, for different material structures and acoustic powers. It is found that for most SiGe/Si structures significantly more acoustic power is needed to produce diffraction efficiencies comparable to those of material systems such as AlGaAs/GaAs. Also it is shown that a high germanium concentration could be desirable for increasing the diffraction efficiency to useful levels View full abstract»

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  • Recent progress in silica-based planar lightwave circuits on silicon

    Publication Year: 1996 , Page(s): 257 - 262
    Cited by:  Papers (23)  |  Patents (27)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (632 KB)  

    Low-loss integrated silica waveguides on silicon allow the efficient interaction of guided-wave optical signals and are used to form a variety of planar lightwave circuits for optical branching, switching and filtering. Silica waveguides can also be used as platforms (motherboards) for hybrid optoelectronic (OE) integration. The paper reviews recent progress on silica waveguide technologies which are currently penetrating the passive component market for optical networks and providing innovative ways of packaging OE components View full abstract»

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  • Co-doping effects in rare-earth-doped planar waveguides

    Publication Year: 1996 , Page(s): 293 - 297
    Cited by:  Papers (3)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (512 KB)  

    Results on rare-earth-doped lasers and amplifiers in planar silica waveguides fabricated by flame hydrolysis deposition (FHD) and reactive ion etching (RIE) are presented. The authors review their results on the optimisation of doping levels, co-dopant species, fusing temperature, fusing time and glass composition to reduce both scatter loss and ion-ion interactions. Two different doping techniques have been investigated and the planar films produced by each are compared. These glasses have been used to produce waveguide lasers in both Nd3+ and Er3+ doped silica View full abstract»

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  • Fabrication and characterisation of a CdS-doped silica-on-silicon planar waveguide

    Publication Year: 1996 , Page(s): 298 - 302
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (600 KB)  

    A planar silica-titania waveguide doped with CdS nanocrystallites has been fabricated on a silicon substrate. A passive nanoporous host layer and a pure silica buffer layer, of thickness 2.2 and 7.5 μm, respectively, were deposited by the sol-gel technique. Crystallites were then precipitated in the porous matrix by soaking in a CdF2 solution followed by reaction in H2S gas, and a sputtered layer of silica was used to seal the structure. The absorption spectrum of an equivalent film indicates crystallites with radii up to ~26 Å, while energy dispersion spectroscopy indicates a dopant concentration of ~0.5 volume%. The third order optical nonlinearity (Kerr effect) was measured using an m-line technique, yielding a value of ~5×10-9 cm2/kW View full abstract»

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  • Arrayed-waveguide grating lasers and their applications to tuning-free wavelength routing

    Publication Year: 1996 , Page(s): 322 - 328
    Cited by:  Papers (5)  |  Patents (5)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (636 KB)  

    The authors propose two kinds of tunable arrayed-waveguide grating (AWG) lasers. One is an AWG ring laser using an AWG multiplexer and an erbium-doped fibre amplifier (EDFA). The other is an AWG Fabry-Perot laser constructed using an AWG multiplexer with the minimum number of inputs/outputs and laser diode (LD) amplifiers; fewer than the desired number of wavelengths. These fabricated 1.55 μm tunable AWG lasers are shown to oscillate successfully at 16 and 32 wavelengths with a 0.8 nm wavelength spacing. As the useful application of the tunable AWG laser source for dense wavelength division multiplexing (WDM) networks, a new lightwave transrouter (LTR) is constructed using the AWG multiplexer formed of an appropriate pair of a fibre ring laser and a wavelength router. The LTR can successfully route a lightwave signal to a desired wavelength-addressed channel. The fabricated 1.55 μm 15-channel tunable LTR is routed automatically to the corresponding channel. The unique configuration is particularly attractive because of the principle tuning-free mechanism. Additionally, a reflective modulator is introduced into a sourceless optical network unit (ONU) for WDM passive optical networks (PONs) and then its fine-signal response is obtained View full abstract»

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