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Microwave and Guided Wave Letters, IEEE

Issue 2 • Date Feb. 1997

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Displaying Results 1 - 7 of 7
  • High Q CMOS-compatible microwave inductors using double-metal interconnection silicon technology

    Page(s): 45 - 47
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    The authors' aim is to demonstrate the possibility of building high quality factor (Q) integrated inductors in the conventional complementary metal-oxide semiconductor (CMOS) process without any additional processes of previous papers, such as thick gold layer or multilayer interconnection. The comparative analysis is extensively carried out to investigate the detailed variation of Q performance according to inductor shape and substrate by varying the substrate resistivity with circular and rectangular shape. The high Q of nearly 12 is achieved from the fabricated inductors with 2 μm metal thickness on the 2 k/spl Omega//spl middot/cm silicon substrate using the CMOS process. View full abstract»

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  • Patent abstracts

    Page(s): 51 - 56
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    Freely Available from IEEE
  • Modal PML

    Page(s): 33 - 35
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    Hybrid numerical techniques in time domain offer computationally efficient means of analysis of certain classes of microwave structures. One of the recently proposed techniques combines the finite-difference time-domain (FDTD) method with the eigenfunction expansion. This method has proven to be very efficient in the analysis of properties of complex planar transmission lines and waveguide discontinuity problems. To achieve full functionality, in particular in the context of the discontinuity analysis, this method has to be complemented by a suitable high-performance absorbing boundary condition. In this letter, we examine a modified Berenger's perfectly matched layer (PML). Tests in a waveguide indicate that low reflections can be obtained in a wide frequency range with few layers of the absorbing medium with a properly selected conductivity profile View full abstract»

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  • Low thermal impedance MMIC technology

    Page(s): 36 - 38
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    A technology has been developed that reduces the thermal resistance of monolithic microwave integrated circuits (MMICs). Novel processing techniques are used to fabricate thin-film capacitors and microstrip lines on the back side of the chip. The front side of the chip is metallized to serve as the ground-plane; the completed chip is assembled inverted so that the active devices are next to the heat sink, but the chip otherwise is a drop-in replacement for conventional MMICs. With very conservative deembedding of circuit losses, an AlGaAs/GaAs heterojunction bipolar transistor (HBT) fabricated in this technology achieved record performance at 20 GHz: over 1.2 W output power with 53% power-added efficiency while operating at 12.7 V View full abstract»

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  • Numerical dispersion relation for FDTD method in general curvilinear coordinates

    Page(s): 48 - 50
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    The numerical dispersion relation (NDR) of the finite-difference time-domain method in general curvilinear coordinates (FDTD-GCC) is discussed for a two-dimensional (2-D) uniformly skewed mesh. The analysis shows that the average scheme, which is being used in the FDTD-GCC method, causes an additional numerical dispersion error. When this dispersion error is considered, the FDTD-GCC method holds the same NDR as that of the FDTD discrete surface integral (FDTD-DSI) method. It also indicates that the stable range of the FDTD-GCC method, with respect to the skewing angle in the 2-D case, is narrowed due to the average scheme View full abstract»

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  • Broadband spatially combined amplifier array using tapered slot transitions in waveguide

    Page(s): 42 - 44
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    Most reported spatially combined or quasioptical amplifier arrays exhibit resonant narrowband performance (<10%) and have not addressed thermal management issues. We report a waveguide-based spatial combining scheme using broadband tapered-slot transitions, capable of realizing full waveguide band coverage (40% fractional bandwidth) with good thermal properties. An X-band prototype using eight medium-power GaAs monolithic microwave integrated circuits (MMICs) produced an output power of 2.4 W and 9-dB power gain at 1-dB compression, with a combining efficiency of 68% and <±1-dB gain variation over the full waveguide band (8-12 GHz) View full abstract»

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  • High-efficiency power amplifier integrated with antenna

    Page(s): 39 - 41
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    Two class B GaAs field-effect transistor (FET) power amplifiers integrated with patch antennas have been designed and fabricated at 2.48 GHz. Both amplifiers are integrated with patch antennas, which serve as load and radiator. In one case, a standard patch design was used with random harmonic termination. In another case, a modified patch design was used, which allows the tuning of the second harmonic. In this case the antenna has an additional function of a filter. An increase of 7% in the power-added efficiency (PAE) and 0.5 dB in the output power was achieved through the second harmonic tuning View full abstract»

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Aims & Scope

This Periodical ceased production in 2000. The current retitled publication is IEEE Microwaves and Wireless Component Letters.

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