Issue 11 • Date Nov 1996
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Theory and observation of enhanced, high field hole transport in Si 1-xGex quantum well p-MOSFETs
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PDF (628 KB)
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Drain current enhancement due to velocity overshoot effects and its analytic modeling
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PDF (500 KB)
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Influence of post-oxidation cooling rate on residual stress and pn-junction leakage current in LOCOS isolated structures
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PDF (428 KB)
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Enhancement of fmax in InP/InGaAs HBTs by selective MOCVD growth of heavily-doped extrinsic base regions
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PDF (636 KB)
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A metal-ferroelectric PbTiO3-semiconductor switch diode (MFSS) for room-temperature high-speed infrared sensing application
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PDF (504 KB)
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Comparisons and extension of recent surface potential models for fully depleted short-channel SOI MOSFET's
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PDF (376 KB)
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A single-transistor silicon synapse
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PDF (868 KB)
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Enhanced tunneling characteristics of PECVD silicon-rich-oxide (SRO) for the application in low voltage flash EEPROM
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PDF (424 KB)
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Characterization and modeling of electromigration failures in multilayered interconnects and barrier layer materials
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PDF (664 KB)
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A study of frequency response in silicon heterojunction bipolar transistors with amorphous silicon emitters
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PDF (948 KB)
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Design of active phase shifters based on multichannel heterojunction field effect transistors (MCHFET's)
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PDF (916 KB)
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Simple approach to include external resistances in the Monte Carlo simulation of MESFETs and HEMTs
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PDF (308 KB)
Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology


