Electron Devices, IEEE Transactions on
Issue 9 • Date Sept. 1996
Society Sponsor
Filter Results
Displaying Results 1 - 25 of 40
-
-
Surface micromachined piezoresistive pressure sensors with step-type bent and flat membrane structures
|
PDF (844 KB)
-
Electrical measurement of electron and hole mobilities as a function of injection level in silicon
|
PDF (652 KB)
-
-
Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics
|
PDF (372 KB)
-
Thermal conductivity measurements of thin silicon dioxide films in integrated circuits
|
PDF (1236 KB)
-
-
A large-signal equivalent circuit model for substrate-induced drain-lag phenomena in HJFETs
|
PDF (592 KB)
-
Deep submicrometer double-gate fully-depleted SOI PMOS devices: a concise short-channel effect threshold voltage model using a quasi-2D approach
|
PDF (540 KB)
-
A low-power, ultra-low capacitance BICMOS process applied to a 2 GHz low-noise amplifier
|
PDF (1400 KB)
-
-
Polycrystalline silicon thin film transistors fabricated at reduced thermal budgets by utilizing fluorinated gate oxidation
|
PDF (592 KB)
-
-
Performance and reliability aspects of FOND: a new deep submicron CMOS device concept
|
PDF (1016 KB)
-
Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFTs
|
PDF (700 KB)
-
A novel technique to determine the gate and drain bias dependent series resistance in drain engineered MOSFETs using one single device
|
PDF (968 KB)
-
Low voltage NVGTM: a new high performance 3 V/5 V flash technology for portable computing and telecommunications applications
|
PDF (636 KB)
-
Design and growth investigations of strained InxGa1-xAs/InAlAs/InP heterostructures for high electron mobility transistor application
|
PDF (1304 KB)
-
An HSPICE HBT model for InP-based single HBTs
|
PDF (276 KB)
-
A very small bipolar transistor technology with sidewall polycide base electrode for ECL-CMOS LSIs
|
PDF (696 KB)
-
Parametric expression of subthreshold slope using threshold voltage parameters for MOSFET statistical modeling
|
PDF (520 KB)
-
-
Noise characteristics of transistors fabricated in an advanced silicon bipolar technology
|
PDF (768 KB)
-
Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes
|
PDF (1560 KB)
-
Numerical simulation of charge transfer and light emission in SrS:Ce thin-film electroluminescent devices
|
PDF (764 KB)
Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
