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IEEE Transactions on Nuclear Science

Issue 2  Part 1 • Apr 1996

 This issue contains several parts.Go to:  Part 2 

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Displaying Results 1 - 25 of 30
  • Recent trends in single-event effect ground testing

    Publication Year: 1996, Page(s):671 - 677
    Cited by:  Papers (15)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (740 KB)

    Single-event phenomena result from a single particle, heavy ion or proton, inducing transients in the sensitive volume of integrated circuits. Particle accelerators are used to simulate the space environment in order to perform a full characterization of the components. This paper describes the methods and facilities necessary for single-event effect (SEE) testing as well as recent trends observed... View full abstract»

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  • Single-event effect ground test issues

    Publication Year: 1996, Page(s):661 - 670
    Cited by:  Papers (25)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1040 KB)

    Ground-based single event effect (SEE) testing of microcircuits permits characterization of device susceptibility to various radiation induced disturbances, including: (1) single event upset (SEU) and single event latchup (SEL) in digital microcircuits; (2) single event gate rupture (SEGR), and single event burnout (SEB) in power transistors; and (3) bit errors in photonic devices. These character... View full abstract»

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  • Single-event-effect mitigation from a system perspective

    Publication Year: 1996, Page(s):654 - 660
    Cited by:  Papers (28)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (788 KB)

    With the sharp decline in the availability of radiation-hardened devices from manufacturers, as well as the desire to shrink power, weight, and volume of spacecraft systems, the use of devices that are susceptible to single-event effects (SEEs) has become commonplace. We present herein a perspective and user's tool for understanding SEE's and potential system-level mitigation techniques View full abstract»

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  • Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs

    Publication Year: 1996, Page(s):533 - 545
    Cited by:  Papers (82)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1132 KB)

    Numerous studies have revealed that vertical power MOSFETs are susceptible to single-event burnout (SEB) and single-event gate rupture (SEGR), resulting in degraded performance or even catastrophic failure when operated in a cosmic-ray environment like space. This paper summarizes many of those experimental studies and examines the problems, test methodologies, and experimental results. Previously... View full abstract»

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  • Space radiation effects in high performance fiber optic data links for satellite data management

    Publication Year: 1996, Page(s):645 - 653
    Cited by:  Papers (30)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (920 KB)

    Fiber optic based technologies are relatively new to satellite applications, and are receiving considerable attention for planned applications in NASA, DOD, and commercial space sectors. We review various activities in recent years aimed at understanding and mitigating radiation related risk in deploying fiber based data handling systems on orbit. Before concluding that there are no critical barri... View full abstract»

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  • Dynamic modeling of trapped particles

    Publication Year: 1996, Page(s):416 - 425
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1360 KB)

    Understanding the dynamics of trapped particles is not simple, because storms are different and not too many satellites are orbiting at the same time with detectors aboard. In the past, general considerations have been made about radial diffusion, sources, and losses but at present, due to the increasing power of computers, new codes can help understand what is really happening to particles during... View full abstract»

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  • Single particle-induced latchup

    Publication Year: 1996, Page(s):522 - 532
    Cited by:  Papers (61)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1304 KB)

    This paper presents an up-to-date overview of the single-event latchup (SEL) hard failure mode encountered in electronic device applications involving heavy ion environment. This phenomenon is specific to CMOS technology. Single-event latchup is discussed after a short description of the effects induced by the interaction of a heavy ion with silicon. Understanding these effects is necessary to und... View full abstract»

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  • Single-event phenomena in GaAs devices and circuits

    Publication Year: 1996, Page(s):628 - 644
    Cited by:  Papers (32)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1876 KB)

    The single-event upset (SEU) characteristics of GaAs devices and circuits are reviewed. GaAs FET-based integrated circuits (ICs) are susceptible to upsets from both cosmic-ray heavy ions and protons trapped in the Earth's radiation belts. The origin of the SEU sensitivity of GaAs ICs is discussed in terms of both device-level and circuit-level considerations. At the device level, efficient charge-... View full abstract»

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  • Single-event effects in SOI technologies and devices

    Publication Year: 1996, Page(s):603 - 613
    Cited by:  Papers (58)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (964 KB)

    Due to their limited sensitive volumes for charge collection, silicon on insulator (SOI) technologies are good candidates for any microelectronic device operating in a space environment. While being insensitive to latchup phenomena, SOI devices may experience single-event effects (SEE's). Based on the analysis of the various structures of SOI transistors, charge collection mechanisms are presented... View full abstract»

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  • Problems with models of the radiation belts

    Publication Year: 1996, Page(s):403 - 415
    Cited by:  Papers (54)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1172 KB)

    The current standard models of the radiation-belt environment have many shortcomings, not the least of which is their extreme age. Most of the data used for them were acquired in the 1960's and early 1970's. Problems with the present models, and the ways in which data from more recent missions are being or can be used to create new models with improved functionality, are described. The phenomenolo... View full abstract»

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  • Cosmic and terrestrial single-event radiation effects in dynamic random access memories

    Publication Year: 1996, Page(s):576 - 593
    Cited by:  Papers (62)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1820 KB)

    A review of the literature on single-event radiation effects (SEE) on MOS integrated-circuit dynamic random access memories (DRAMs) is presented. The sources of single-event (SE) radiation particles, causes of circuit information loss, experimental observations of SE information upset, technological developments for error mitigation, and relationships of developmental trends to SE vulnerability ar... View full abstract»

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  • The influence of VLSI technology evolution on radiation-induced latchup in space systems

    Publication Year: 1996, Page(s):505 - 521
    Cited by:  Papers (78)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1880 KB)

    Changes in technology and device scaling have generally increased the sensitivity of VLSI devices to latchup from single interactions of heavy particles in space. This paper discusses latchup mechanisms, comparing latchup from heavy particles in space with electrically induced latchup, which has been more widely studied. The effects of technology changes and device scaling on latchup susceptibilit... View full abstract»

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  • Single-event effects experienced by astronauts and microelectronic circuits flown in space

    Publication Year: 1996, Page(s):475 - 482
    Cited by:  Papers (19)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (940 KB)

    Models developed for explaining the light flashes experienced by astronauts on Apollo and Skylab missions were used with slight modification to explain upsets observed in microelectronic circuits. Both phenomena can be explained by the simple assumption that an event occurs whenever a threshold number of ionizations or isomerizations are generated within a sensitive volume. Evidence is consistent ... View full abstract»

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  • Measurements of the SEE environment from sea level to GEO using the CREAM and CREDO experiments

    Publication Year: 1996, Page(s):383 - 402
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1448 KB)

    The cosmic radiation environment and activation monitor (CREAM) and cosmic radiation environment and dosimetry (CREDO) experiments have now been employed in a wide range of flight situations including aircraft, Space Shuttle, UOSAT spacecraft, and most recently the advanced photovoltaics and electronics experiment (APEX) and Space Technology Research Vehicle (STRV) satellites. Results from this un... View full abstract»

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  • Laboratory tests for single-event effects

    Publication Year: 1996, Page(s):678 - 686
    Cited by:  Papers (54)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (900 KB)

    Integrated circuits are currently tested at accelerators for their susceptibility to single-event effects (SEE's). However, because of the cost and limited accessibility associated with accelerator testing, there is considerable interest in developing alternate testing methods. Two laboratory techniques for measuring SEE, one involving a pulsed laser and the other 252Cf, are described i... View full abstract»

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  • A review of the techniques used for modeling single-event effects in power MOSFETs

    Publication Year: 1996, Page(s):546 - 560
    Cited by:  Papers (54)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1884 KB)

    Heavy ions can trigger catastrophic failure modes in power metal-oxide-semiconductor field-effect transistors (MOSFETs). Single-event effects (SEE), namely, single-event burnout (SEB), and single-event gate rupture (SEGR), of power MOSFETs are catastrophic failure mechanisms that are initiated by the passage of a heavy ion through the device structure. Various analytical, semianalytical, and simul... View full abstract»

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  • Upsets related to spacecraft charging

    Publication Year: 1996, Page(s):426 - 441
    Cited by:  Papers (54)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1896 KB)

    The charging of spacecraft components by high energy radiation can result in spontaneous pulsed discharges. The pulses can interrupt normal operations of spacecraft electronics. The 20-year history of ground studies and spacecraft studies of this phenomenon are reviewed. The data from space are not sufficient to unambiguously point to a few specific solutions. The ground based data continue to fin... View full abstract»

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  • Proton effects in charge-coupled devices

    Publication Year: 1996, Page(s):614 - 627
    Cited by:  Papers (99)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1516 KB)

    Basic mechanisms and ground-test data for radiation effects in solid-state imagers are reviewed, with a special emphasis on proton-induced effects on silicon charge-coupled devices (CCDs). For the proton fluxes encountered in the space environment, both transient ionization and displacement damage effects arise from single-particle interactions. In the former case, individual proton tracks will be... View full abstract»

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  • Single-event effects in analog and mixed-signal integrated circuits

    Publication Year: 1996, Page(s):594 - 602
    Cited by:  Papers (45)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (860 KB)

    Analog and mixed-signal integrated circuits are also susceptible to single-event effects, but they have rarely been tested. Analog circuit single-particle transients require modified test techniques and data analysis. Existing work is reviewed and future concerns are outlined View full abstract»

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  • Single-event effects rate prediction

    Publication Year: 1996, Page(s):483 - 495
    Cited by:  Papers (62)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1400 KB)

    Common practices for predicting rates of single-event effects (SEE) in microelectronics in space environments are reviewed. Established rate-prediction models are discussed, and comparison is drawn between alternative approaches with discussion of dominant modeling parameters, assumptions, and limitations and the impact on prediction results. Areas of current uncertainty are identified. Approaches... View full abstract»

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  • Microbeam studies of single-event effects

    Publication Year: 1996, Page(s):687 - 695
    Cited by:  Papers (40)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (896 KB)

    The application of heavy-ion microbeam systems to the study of single-event effects is reviewed. Apertured microbeam systems have been used since the early 1980s to study charge collection. This has led to the development of the present models for the transport of charge following heavy-ion strikes in semiconductors. More recently, magnetically focused scanned microbeams have allowed direct imagin... View full abstract»

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  • Device simulation of charge collection and single-event upset

    Publication Year: 1996, Page(s):561 - 575
    Cited by:  Papers (100)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1852 KB)

    In this paper we review the current status of device simulation of ionizing-radiation-induced charge collection and single-event upset (SEU), with an emphasis on significant results of recent years. We present an overview of device-modeling techniques applicable to the SEU problem and the unique challenges this task presents to the device modeler. We examine unloaded simulations of radiation-induc... View full abstract»

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  • Total-dose issues for microelectronics in space systems

    Publication Year: 1996, Page(s):442 - 452
    Cited by:  Papers (31)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1160 KB)

    Ionizing radiation has been a problem for space-system microelectronics from the earliest satellites. Much progress has been made in understanding the physical mechanisms that cause total-dose-induced failure, and this knowledge has been applied to hardened-technology development. Many of the hardened technologies are no longer available, however, and hence more commercial off-the-shelf components... View full abstract»

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  • Approaches to proton single-event rate calculations

    Publication Year: 1996, Page(s):496 - 504
    Cited by:  Papers (51)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (836 KB)

    This article discusses the fundamentals of proton-induced single-event upsets and of the various methods that have been developed to calculate upset rates. Two types of approaches are used based on nuclear-reaction analysis. Several aspects can be analyzed using analytic methods, but a complete description is not available. The paper presents an analytic description for the component due to elasti... View full abstract»

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  • High-energy charged particles in space at one astronomical unit

    Publication Year: 1996, Page(s):344 - 352
    Cited by:  Papers (20)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (784 KB)

    Single-event effects and many other spacecraft anomalies are caused by positively charged high-energy particles impinging on the vehicle and its component parts. Here, we review the current knowledge of the interplanetary particle environment in the energy ranges that are most important for these effects. State-of-the-art engineering models are described briefly along with comments on the future w... View full abstract»

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Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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