Implementation of high-k gate dielectrics - a status update
De Gendt, S.; Chen, J.; Carter, R.; Cartier, E.; Caymax, M.; Claes, M.; Conard, T.; Delabie, A.; Deweerd, W.; Kaushik, V.; Kerber, A.; Kubicek, S.; Maes, J.W.; Niwa, M.; Pantisano, L.; Puurunen, R.; Ragnarsson, L.; Schram, T.; Shimamoto, Y.; Tsai, W.; Rohr, E.; Van Elshocht, S.; Witters, T.; Young, E.; Zhao, C.; Heyns, M.
Page(s): 10- 14 Abstract
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Degradation of dielectric characteristics of underlying ultrathin SiO2 films by Al adsorption in high vacuum
Tanabe, M.; Goto, M.; Uedono, A.; Yamabe, K.
Page(s): 18- 19
Digital Object Identifier 10.1109/IWGI.2003.1252498 Abstract
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The influence of silicon nitride cap on NBTI and fermi pinning in HfO2 gate stacks
Sasaki, T.; Ootsuka, F.; Hoshi, T.; Kawahara, T.; Maeda, T.; Yasuhira, M.; Arikado, T.
Page(s): 20- 23 Abstract
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Vapor-liquid hybrid deposition (VALID) of hafnium silicate films using Hf(OtC4H9)4 and Si(OC2H5)4 precursors
Improvement in the uniformity and the thermal stability of Hf-silicate gate dielectric by plasma-nitridation
Kamiyama, S.; Aoyama, T.; Tsutsumi, Y.; Takada, H.; Horiuchi, A.; Maeda, T.; Torii, K.; Kitajima, H.; Arikado, T.
Page(s): 42- 46 Abstract
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Gate dielectrics on strained-Ge layers on Si1-xGex/Si virtual substrates
Bhattacharya, S.; McCarthy, J.; Armstrong, B.M.; Gamble, H.S.; Dalapati, G.K.; Das, S.; Maiti, C.K.; Perova, T.; Moore, A.
Page(s): 48- 49 Abstract
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Method of increasing gate nitridation and its impact on CMOS devices
Gopinath, V.P.; Hornback, V.; Le, Y.; Kamath, A.; Duong, L.; Lin, J.; Mirabedini, M.R.; Yeh, W.C.
Page(s): 50- 52 Abstract
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Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric
Ching-Wei Chen; Chao-Hsin Chien; Shih-Chich Ou; Tsu-Hsiu Perng; Da-Yuan Lee; Yi-Cheng Chen; Horng-Chich Lin; Tiao-Yuan Huang; Chun-Yen Chang
Page(s): 54- 57 Abstract
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Ultra-thin SiN gate dielectric fabricated by N2 plasma direct nitridation
Inoue, M.; Tsuchimoto, J.; Mizutani, M.; Yugami, J.; Ohno, Y.; Yoneda, M.
Page(s): 58- 60
Digital Object Identifier 10.1109/IWGI.2003.1252509 Abstract
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Effects of interactions between HfO2 and poly-Si on MOSCAP and MOSFET electrical behavior
Kaushik, V.S.; Rohr, E.; De Gendt, S.; Delabie, A.; Van Elshocht, S.; Claes, M.; Shi, X.; Shimamoto, Y.; Ragnarsson, L.-A.; Witters, T.; Manabe, Y.; Heyns, M.
Page(s): 62- 63 Abstract
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Improved performance of FETs with HfAlOx gate dielectrics using optimized poly-SiGe gate electrodes
Muto, A.; Ohji, H.; Kawahara, T.; Maeda, T.; Torii, K.; Kitajima, H.
Page(s): 64- 68 Abstract
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Self-organized Si suboxide (SiOx, x<2) interfacial layers - optimization of performance and reliability in advanced devices
Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices
Lin, H.-C.; Lee, D.-Y.; Ou, S.-C.; Chien, C.-H.; Huang, T.-Y.
Page(s): 76- 79
Digital Object Identifier 10.1109/IWGI.2003.1252513 Abstract
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Resonant tunneling in stacked dielectrics: a novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics
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