NuoFu Chen; Xingru Zhong; Mian Zhang; Lanying Lin
Page(s): 3- 8
Digital Object Identifier 10.1109/SIM.2002.1242714 Abstract
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Hopping conduction in lithium diffused and annealed GaAs
Gudmundsson, J.T.; Svavarsson, H.G.; Gislason, H.P.
Page(s): 9- 12
Digital Object Identifier 10.1109/SIM.2002.1242715 Abstract
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Growth of InP substrate crystals by the vertical gradient freeze technique
Sahr, U.; Muller, G.
Page(s): 13- 18
Digital Object Identifier 10.1109/SIM.2002.1242716 Abstract
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Inspection of residual strain in GaAs single crystal as standard ingot form
Yamada, M.; Tao Chu
Page(s): 19- 22
Digital Object Identifier 10.1109/SIM.2002.1242717 Abstract
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Electric field distribution in chromium compensated GaAs
Tyazhev, A.V.; Budnitsky, D.L.; Tolbanov, O.P.
Page(s): 23- 26
Digital Object Identifier 10.1109/SIM.2002.1242718 Abstract
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Photocurrent and photoluminescence in Fe-doped InP
Alvarez, A.; Gonzalez, M.A.; Avella, M.; Jimenez, J.; Fornari, R.
Page(s): 27- 30
Digital Object Identifier 10.1109/SIM.2002.1242719 Abstract
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Electrical properties of semi-insulating GaAS irradiated with neutrons
Bohacek, P.; Morvic, M.; Betko, J.; Dubecky, F.; Huran, J.
Page(s): 31- 34
Digital Object Identifier 10.1109/SIM.2002.1242720 Abstract
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GaAs for X-imaging and particle detectors
Ayzenshtat, A.I.; Budnitsky, D.L.; Koretskaya, O.B.; Okaevich, L.S.; Novikov, V.A.; Potapov, A.I.; Tolbanov, O.P.; Tyazhev, A.V.; Vorobiev, A.P.
Page(s): 35- 38
Digital Object Identifier 10.1109/SIM.2002.1242721 Abstract
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Heteroepitaxy of GaN on Si(111)
Krost, A.; Dadgar, A.
Page(s): 41- 47
Digital Object Identifier 10.1109/SIM.2002.1242722 Abstract
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Direct determination of the built-in polarization field in InGaN/GaN quantum wells
Schmidt, R.; Kiesel, P.; Kneissl, M.; Van de Walle, C.G.; Johnson, N.M.; Renner, F.; Dohler, G.H.
Page(s): 48- 51
Digital Object Identifier 10.1109/SIM.2002.1242723 Abstract
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Electrical characterization of hydrogenated n-type AlGaN
Seghier, D.; Gislason, H.
Page(s): 52- 55
Digital Object Identifier 10.1109/SIM.2002.1242724 Abstract
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Photoenhanced wet etching of n-gallium nitride
Skriniarova, J.; Michalka, M.; Uherek, F.; Kordos, P.
Page(s): 56- 59
Digital Object Identifier 10.1109/SIM.2002.1242725 Abstract
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High quality quaternary InAlGaN alloys grown by plasma-assisted molecular beam epitaxy
Dimakis, E.; Georgakilas, A.; Kittler, G.; Androulidaki, M.; Tsagaraki, K.; Bellet-Amalric, E.; Jalabert, D.; Pelekanos, N.T.
Page(s): 60- 63
Digital Object Identifier 10.1109/SIM.2002.1242726 Abstract
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Group III-nitride devices for field effect based gas detection
Eickhoff, M.; Schalwig, J.; Weidemann, O.; Gorgens, L.; Muller, G.; Stutzmann, M.
Page(s): 64- 69
Digital Object Identifier 10.1109/SIM.2002.1242727 Abstract
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Differences and similarities between structural properties of GaN grown by different growth methods
Liliental-Weber, Z.; Jasinski, J.; Washburn, J.
Page(s): 70- 75
Digital Object Identifier 10.1109/SIM.2002.1242728 Abstract
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Chareterization of GaN/InGaN hetero-structures by SEM and CL
Fornari, R.; Bosi, M.; Avella, M.; Martin, E.; Jimenez, J.
Page(s): 76- 79
Digital Object Identifier 10.1109/SIM.2002.1242729 Abstract
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Influence of isochronal annealing on the evolution of hole traps in GaAsN epilayers grown by metalorganic chemical vapor deposition
Gao, Q.; Tan, H.H.; Jagadish, C.; Deenapanray, P.N.K.
Page(s): 80- 83
Digital Object Identifier 10.1109/SIM.2002.1242730 Abstract
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Growth and fundamental properties of GeSi bulk crystals
Yonenaga, I.
Page(s): 87- 92
Digital Object Identifier 10.1109/SIM.2002.1242731 Abstract
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Optical and structural characterisation of CdTe crystals grown by physical vapour transport and Bridgman methods
Armani, N.; Ferrari, C.; Salviati, G.; Bissoli, F.; Zha, M.; Zappettini, A.; Zanotti, L.
Page(s): 93- 96
Digital Object Identifier 10.1109/SIM.2002.1242732 Abstract
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The thermal stability of Ni and Ni/Au ohmic contacts to n-type 4H-SiC
Kim, B.K.; Burm, J.; An, C.
Page(s): 97- 101
Digital Object Identifier 10.1109/SIM.2002.1242733 Abstract
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A step forward to the growth and characterization of compositionally homogeneous InxGa1-xAs bulk crystal
Verma, P.; Islam, M.R.; Yamada, M.; Hanaue, Y.; Kinoshita, K.; Tatsumi, M.
Page(s): 102- 105
Digital Object Identifier 10.1109/SIM.2002.1242734 Abstract
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Electrical study of 4H-SiC irradiated with swift heavy ions
Kalinina, E.; Onushkin, G.; Davidov, D.; Hallen, A.; Konstantinov, A.; Skuratov, V.A.; Stano, J.
Page(s): 106- 109
Digital Object Identifier 10.1109/SIM.2002.1242735 Abstract
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Luminescence properties of semi-insulating nominally-undoped CdTe crystals
Zappettini, A.; Corregidor, V.; Dieguez, E.; Zha, M.; Bissoli, F.; Zanotti, L.
Page(s): 110- 113
Digital Object Identifier 10.1109/SIM.2002.1242736 Abstract
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Huran, J.; Hotovy, I.; Kobzev, A.P.; Balalykin, N.I.
Page(s): 114- 117
Digital Object Identifier 10.1109/SIM.2002.1242737 Abstract
| Full Text: PDF (242 KB)
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