Externally phase-locked flux flow oscillator for submm integrated receivers: achievements and limitations
Koshelets, V.P.; Shitov, S.V.; Dmitriev, P.N.; Ermakov, A.B.; Sobolev, A.S.; Torgashin, M.Yu.; Khodos, V.V.; Vaks, V.L.; Wesselius, P.R.; Yagoubov, P.A.; Mahaini, C.; Mygind, J.
Page(s): 1035- 1038
Digital Object Identifier 10.1109/TASC.2003.814144 Abstract
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Properties of a high-Tc dc SQUID radiofrequency amplifier
Kalaboukhov, A.S.; Tarasov, M.A.; Lohmus, A.; Ivanov, Z.G.; Snigirev, O.V.
Page(s): 1039- 1041
Digital Object Identifier 10.1109/TASC.2003.814145 Abstract
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Chairperson's introduction ASC-2002 proceedings
Chu, P.; Butler, S.; Gubser, D.
Page(s): 69- 69
Digital Object Identifier 10.1109/TASC.2003.814086 Abstract
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Fabrication of high current density Nb integrated circuits using a self-aligned junction anodization process
Kerber, G.L.; Abelson, L.A.; Edwards, K.; Hu, R.; Johnson, M.W.; Leung, M.L.; Luine, J.
Page(s): 82- 86
Digital Object Identifier 10.1109/TASC.2003.813649 Abstract
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High-performance Nb integrated circuit process fabrication
Murduck, J.M.; Kirschenbaum, A.; Mayer, A.; Morales, V.; Lavoie, C.
Page(s): 87- 90
Digital Object Identifier 10.1109/TASC.2003.813651 Abstract
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Light-anodization process for high-Jc micron and submicron superconducting junction and integrated circuit fabrication
Xiaofan Meng; Van Duzer, T.
Page(s): 91- 94
Digital Object Identifier 10.1109/TASC.2003.813652 Abstract
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The detection of defects in a niobium tri-layer process
Joseph, A.A.; Heuvelmans, S.; Gerritsma, G.J.; Kerkhoff, H.G.
Page(s): 95- 98
Digital Object Identifier 10.1109/TASC.2003.813654 Abstract
| Full Text: PDF (1279 KB)
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Tunneling properties of barriers in Nb/Al/AlOx/Nb junctions
Tolpygo, S.K.; Cimpoiasu, E.; Liu, X.; Simonian, N.; Polyakov, Yu.A.; Lukens, J.E.; Likharev, K.K.
Page(s): 99- 102
Digital Object Identifier 10.1109/TASC.2003.813655 Abstract
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Development toward high-speed integrated circuits and SQUID qubits with Nb/AlOx/Nb Josephson junctions
Chen, W.; Patel, V.; Tolpygo, S.K.; Yohannes, D.; Pottorf, S.; Lukens, J.E.
Page(s): 103- 106
Digital Object Identifier 10.1109/TASC.2003.813656 Abstract
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High quality Nb-based tunnel junctions for high frequency and digital applications
Dmitriev, P.N.; Lapitskaya, I.L.; Filippenko, L.V.; Ermakov, A.B.; Shitov, S.V.; Prokopenko, G.V.; Kovtonyuk, S.A.; Koshelets, V.P.
Page(s): 107- 110
Digital Object Identifier 10.1109/TASC.2003.813657 Abstract
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Improved critical-current-density uniformity by using anodization
Nakada, D.; Berggren, K.K.; Macedo, E.; Liberman, V.; Orlando, T.P.
Page(s): 111- 114
Digital Object Identifier 10.1109/TASC.2003.813658 Abstract
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Ti quadlevel resist process for the fabrication of Nb SIS junctions
Clark, W.W.; Zhang, J.Z.; Lichtenberger, A.W.
Page(s): 115- 118
Digital Object Identifier 10.1109/TASC.2003.813659 Abstract
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New fabrication process for Josephson tunnel junctions using photosensitive polyimide insulation layer for superconducting integrated circuits
Kikuchi, K.; Segawa, S.; Eun-Sil Jung; Nakagawa, H.; Tokoro, K.; Itatani, H.; Aoyagi, M.
Page(s): 119- 122
Digital Object Identifier 10.1109/TASC.2003.813660 Abstract
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Thermal annealing of Nb/Al-AlOx/Nb Josephson junctions
Migacz, J.V.; Huber, M.E.
Page(s): 123- 126
Digital Object Identifier 10.1109/TASC.2003.813661 Abstract
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Analysis of the fabrication process of Nb/Al-AlNx/Nb tunnel junctions with low RnA values for SIS mixers
Iosad, N.N.; Kroug, M.; Zijlstra, T.; Ermakov, A.B.; Jackson, B.D.; Zuiddam, M.; Meijer, F.E.; Klapwijk, T.M.
Page(s): 127- 130
Digital Object Identifier 10.1109/TASC.2003.813662 Abstract
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Characterization of low frequency noise in epitaxial NbN/AlN/NbN tunnel junctions
Zhen Wang; Saito, A.; Kawakami, A.; Hamasaki, K.
Page(s): 131- 134
Digital Object Identifier 10.1109/TASC.2003.813663 Abstract
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Integrated niobium thin film air bridges as variable capacitors for superconducting GHz electronic circuits
Schicke, M.; Schuster, K.F.
Page(s): 135- 137
Digital Object Identifier 10.1109/TASC.2003.813664 Abstract
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Nb/AlOx/Al/AlOx/Nb double-barrier junctions with high critical current densities: influence of barrier asymmetry
Tolpygo, S.K.; Brinkman, A.; Golubov, A.A.; Kupriyanov, M.Yu.
Page(s): 138- 141
Digital Object Identifier 10.1109/TASC.2003.813665 Abstract
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Cross-type submicron Josephson junctions using SNS technology for Josephson voltage standard applications
May, T.; Schubert, M.; Wende, G.; Hubner, U.; Fritzsch, L.; Meyer, H.-G.
Page(s): 142- 145
Digital Object Identifier 10.1109/TASC.2003.813666 Abstract
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Nb/Al/Nb junctions with a wide range of characteristic voltages for superconducting electronic applications
Lacquaniti, V.; Maggi, S.; Steni, R.; Cagliero, C.; Andreone, D.; Rocci, R.
Page(s): 146- 149
Digital Object Identifier 10.1109/TASC.2003.813667 Abstract
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Accurate Josephson voltage-frequency relation in a granular array of mesoscopic SNS weak links
Matsui, T.; Ohta, H.
Page(s): 150- 154
Digital Object Identifier 10.1109/TASC.2003.813668 Abstract
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Three-temperature model for hot electron superconducting bolometers based on high-Tc superconductor for terahertz applications
Adam, A.; Gaugue, A.; Ulysse, C.; Kreisler, A.; Boulanger, C.
Page(s): 155- 159
Digital Object Identifier 10.1109/TASC.2003.813669 Abstract
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Speed measurements of diffusion-cooled tantalum bolometers
Skalare, A.; McGrath, W.R.; Bumble, B.; LeDuc, H.G.
Page(s): 160- 163
Digital Object Identifier 10.1109/TASC.2003.813670 Abstract
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Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer
Meledin, D.; Tong, C.-Y.E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Goltsman, G.
Page(s): 164- 167
Digital Object Identifier 10.1109/TASC.2003.813671 Abstract
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