Influence of Mg and In on defect formation in GaN: bulk and MOCVD
grown samples
Liliental-Weber, Z.; Benamara, M.; Jasinski, J.; Swider, W.; Washburn, J.; Grzegory, I.; Porowski, S.; Bak-Misiuk, J.; Domagala, J.; Bedair, S.; Eiting, C.I.; Dupuis, R.D.
Page(s): 3-10
Digital Object Identifier 10.1109/SIM.2000.939187 Abstract
| Full Text: PDF (540 KB)
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Selectively excited blue luminescence in heavily Mg doped p-type
GaN
Colton, J.S.; Yu, P.Y.
Page(s): 11-14
Digital Object Identifier 10.1109/SIM.2000.939188 Abstract
| Full Text: PDF (188 KB)
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Local structure and bonding of luminescent Er in GaN: a contrast
with Er in Si
Citrin, P.H.; Northrup, P.A.; Birkhahn, R.; Steckl, A.J.
Page(s): 15-22
Digital Object Identifier 10.1109/SIM.2000.939189 Abstract
| Full Text: PDF (336 KB)
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Analysis of non-exponential thermal emission transients in undoped
MOCVD-grown GaN
Umana-Membreno, G.A.; Spaargaren, S.M.R.; Dell, J.M.; Nener, B.D.; Faraone, L.; Parish, G.; Mishra, U.K.
Page(s): 23-26
Digital Object Identifier 10.1109/SIM.2000.939190 Abstract
| Full Text: PDF (232 KB)
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Influence of arsenic doping on the electrical properties of GaN
epitaxial layers grown by MOCVD
Ahoujja, M.; Yeo, Y.K.; Hengehold, R.L.; Guido, L.J.; Mitev, P.; Johnstone, D.K.; Kim, Y.H.
Page(s): 27-30
Digital Object Identifier 10.1109/SIM.2000.939191 Abstract
| Full Text: PDF (192 KB)
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Photo- and cathodoluminescence investigations of piezoelectric
GaN/AlGaN quantum well structures
Godlewski, M.; Goldys, E.M.; Phillips, M.R.; Ivanov, V.Yu.; Langer, R.; Barski, A.
Page(s): 31-34
Digital Object Identifier 10.1109/SIM.2000.939192 Abstract
| Full Text: PDF (132 KB)
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Deep centers in as-grown and electron-irradiated n-GaN
Fang, Z.-Q.; Polenta, L.; Hemsky, J.W.; Look, D.C.
Page(s): 35-42
Digital Object Identifier 10.1109/SIM.2000.939193 Abstract
| Full Text: PDF (460 KB)
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Electron irradiation induced defects in n-GaN
Goodman, S.A.; Auret, F.D.; Legodi, M.J.; Myburg, G.; Beaumont, B.; Gibart, P.
Page(s): 43-46
Digital Object Identifier 10.1109/SIM.2000.939194 Abstract
| Full Text: PDF (212 KB)
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Ion implantation into GaN: opportunities and problems
Kucheyev, S.O.; Williams, J.S.; Jagadish, C.; Zou, J.; Toth, M.; Phillips, M.R.; Li, G.
Page(s): 47-50
Digital Object Identifier 10.1109/SIM.2000.939195 Abstract
| Full Text: PDF (264 KB)
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The properties of GaN films grown by plasma assisted laser-induced
chemical vapour deposition, and the influence of heavy ion irradiation
Afifuddin, A.; Butcher, K.S.A.; Tansley, T.L.; Timmers, H.; Elliman, R.G.; Weijers, T.D.M.; Ophel, T.R.
Page(s): 51-54
Digital Object Identifier 10.1109/SIM.2000.939196 Abstract
| Full Text: PDF (244 KB)
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Measurements of piezoelectric coefficients of nitride semiconductor
films
Guy, I.L.; Goldys, E.M.; Muensit, S.
Page(s): 55-58
Digital Object Identifier 10.1109/SIM.2000.939197 Abstract
| Full Text: PDF (172 KB)
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Improvements in the dielectric properties of aluminium nitride
through passivation
Butcher, K.S.A.; Tansley, T.L.
Page(s): 59-62
Digital Object Identifier 10.1109/SIM.2000.939198 Abstract
| Full Text: PDF (188 KB)
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Characterization of defects in LT-GaAs using a novel method based
on thin LT-layers incorporated into pin diodes
Kiesel, P.; Tautz, S.; Pfeiffer, K.-F.; Kramer, S.; Steen, C.; Malzer, S.; Dohler, G.H.
Page(s): 65-72
Digital Object Identifier 10.1109/SIM.2000.939199 Abstract
| Full Text: PDF (356 KB)
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Defect engineering in MBE grown GaAs based materials
Specht, P.; Cich, M.J.; Zhao, R.; Jager, N.D.; Gebauer, J.; Borner, F.; Krause-Rehberg, R.; Luysberg, M.; Weber, E.R.
Page(s): 73-76
Digital Object Identifier 10.1109/SIM.2000.939200 Abstract
| Full Text: PDF (228 KB)
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Control of non-stoichiometry of low-temperature-grown III-V
semiconductors using in situ reflectance difference spectroscopy
Herfort, J.; Apostolopoulos, G.; Ulrici, W.; Daweritz, L.; Ploog, K.H.
Page(s): 77-80
Digital Object Identifier 10.1109/SIM.2000.939201 Abstract
| Full Text: PDF (196 KB)
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Influence of Be doping on the structural properties of
low-temperature grown GaAs
Luysberg, M.; Specht, P.; Weber, E.R.
Page(s): 81-84
Digital Object Identifier 10.1109/SIM.2000.939202 Abstract
| Full Text: PDF (464 KB)
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A comparative study of the Ostwald ripening of As precipitates in
LT-MBE grown and in As implanted GaAs
Toufella, M.; Bonafos, C.; Ben Assayag, G.; de Mauduit, B.; Bedel, E.; Fontaine, C.; Pucch, P.; Carles, R.; Chalddyshev, V.; Claverie, A.
Page(s): 85-88
Digital Object Identifier 10.1109/SIM.2000.939203 Abstract
| Full Text: PDF (252 KB)
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Be-doped low-temperature grown GaAs for ultrafast optoelectronic
devices and applications
Coutaz, J.-L.; Roux, J.-F.; Gaarder, A.; Marcinkevicius, S.; Jasinski, J.; Korona, K.; Kaminska, M.; Bertulis, K.; Krotkus, A.
Page(s): 89-96
Digital Object Identifier 10.1109/SIM.2000.939204 Abstract
| Full Text: PDF (396 KB)
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Separation of electron and hole dynamics in low-temperature grown
GaAs
Haiml, M.; Siegner, U.; Morier-Genoud, F.; Gebauer, J.; Specht, P.; Weber, E.R.; Keller, U.
Page(s): 97-100
Digital Object Identifier 10.1109/SIM.2000.939205 Abstract
| Full Text: PDF (208 KB)
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Characterisation of indium phosphide using terahertz radiation
Causley, R.L.; Lewis, R.A.
Page(s): 101-104
Digital Object Identifier 10.1109/SIM.2000.939206 Abstract
| Full Text: PDF (176 KB)
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Mound formation during GaAs(001) homoepitaxy at low substrate
temperatures
Apostolopoulos, G.; Herfort, J.; Daweritz, L.; Ploog, K.H.
Page(s): 105-108
Digital Object Identifier 10.1109/SIM.2000.939207 Abstract
| Full Text: PDF (332 KB)
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Temporal response modeling of metal-semiconductor-metal
photodetector
Averine, S.; Chan, Y.C.; Ng, S.L.; Sachot, R.; Lam, Y.L.
Page(s): 109-112
Digital Object Identifier 10.1109/SIM.2000.939208 Abstract
| Full Text: PDF (220 KB)
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Optoelectronic properties of nonstoichiometric heterostructures
Nolte, D.D.; Balasubramanian, S.; Melloch, M.R.
Page(s): 113-120
Digital Object Identifier 10.1109/SIM.2000.939209 Abstract
| Full Text: PDF (324 KB)
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Enhanced intermixing in anion and cation sublattices of
low-temperature grown GaAs
Chaldyshev, V.V.; Bert, N.A.; Musikhin, Yu.G.; Suvorova, A.A.; Preobrazhenskii, V.V.; Putyato, M.A.; Semyagin, B.R.; Werner, P.
Page(s): 121-124
Digital Object Identifier 10.1109/SIM.2000.939210 Abstract
| Full Text: PDF (200 KB)
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